• 한국세라믹학회지
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• 제31권10호
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.522-522
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• 1996

An investigation of the effects of transverse magnetic field and Peltier effect on melt convection and macrosegregation in vertical Bridgman crystal grosth of Te doped InSb was been carried out by means of microstructure observation, Hall measurement, electrical resistivity measurement and X-ray analysis. Before the experiments, Interface stability, convective instability and suppression of convection by magnetic field were calculated theoretically. After doping 1018, 1019 cm-3 Te in InSb, the temperature of Bridgman furnace was set up at $650^{\circ}C$. The samples were grown in I.D. 11mm, 100mm high quartz tube. The velocity of growth was about 2${\mu}{\textrm}{m}$/sec. In order to obtain the suppression of convection by magnetic field in the middle of growth, 2-4KG magnetic field was set on the melt. For searching of the shape of solid-liquid interface and the actual velocity of crystal growth, let 2A current flow from solid to liquid for 1second every 50seconds repeatedly (Peltier effect). The grown InSb was polycrystal, and each grain was very sharp. There was no much difference between the sample with and without magnetic field at a point of view of microstructure. For the sample with Peltier effect, the Peltier marks(striation) were observed regularly as expected. Through these marks, it was found that the solid-liquid interface was flat and the actual growth velocity was about 1-2${\mu}{\textrm}{m}$/sec. On the ground of theoretical calculation, there is thermosolutal convection in the Te doped InSb melt without magnetic field in this growth condition. and if there is more than 1KG magnetic field, the convection is suppressed. Through this experiments, the effective distribution coefficients, koff, were 0.35 in the case of no magnetic field, and 0.45 when the magnetic field is 2KG, 0.7 at 4KG. It was found that the more magnetic field was applied, the more convection was suppressed. But there was some difference between the theoretical calculation and the experiment, the cause of the difference was thought due to the use of some approximated values in theoretical calculation. In addition to these results, the sample with Peltier effect showed unexpected result about the Te distribution in InSb. It looked like no convection and no macrosegregation. It was thought that the unexpected behavior was due to Peltier mark. that is, when the strong current flew the growing sample, the mark was formed by catching Te. As a result of the phenomena, the more Te containing thin layer was made. The layer ruled the Hall measurement. The values of resistivity and mobility of these samples were just a little than those of other reference. It was thought that the reason of this result was that these samples were due to polycrystal, that is, grain boundaries had an influence on this result.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.217.2-217.2
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.695-701
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• 2016

Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.

• 한국재료학회지
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• 제16권6호
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• pp.382-385
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• 2006

Ni-doped $CoSb_3$ was prepared by the hot pressing, and its doping effects on the thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by encapsulated induction melting and the subsequent heat treatment at 773 K for 24 hrs, followed by the hot pressing under 60 MPa at 773 K for 2 hrs. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the Ni doping.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.156-157
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• 2007

For tens of years many advantages of Phase-Change Random Access Memory(PRAM) were introduced. Although the performance improved gradually, there are some portions which must be improved. So, we studied new constitution of $Ge_1Se_1Te_2$ chalcogenide material to improve phase transition characteristic. Actually, the performance properties have been improved surprisingly. However, crystallization time was as long as ever for amorphization time. We conducted this experiment in order to solve that problem by doping-Sb.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.226-232
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• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

• 한국세라믹학회지
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• 제37권2호
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• pp.186-193
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• 2000

Effects of 1.0 mol% CoO addition on sintering and the electrical properties of ZnO-Bi2O3-Sb2O3(ZBS) varistor system with 3.0 mol% co-addition of Sb2O3 and Bi2O3 at various Sb/Bi ratio (0.5, 1.0, and 2.0) were investigated. Cobalt had little influence on the liquid-phase formation and the pyrochlore decomposition temepratures of ZBS, while densification was mainly dependent on Sb/Bi ratio: when Sb/Bi=0.5, excess Bi2O3 irrelevant to the formation of pyrochore(Zn2Sb3Bi3O14) forms eutectic liquid at ~75$0^{\circ}C$ which promotes densification and grain growth; with Sb/Bi=2.0, the second phase Zn7Sb2O12 formed by excess Sb2O3 irrelevant to the formation of the pyrochlore retards densification up to ~100$0^{\circ}C$. These phases caused the coarsening and uneven distribution of the second phase particles on the grain boundaries of ZnO above the pyrochlore decomposition temperature(~105$0^{\circ}C$), which led to broad size dist-ribution of ZnO; the specimen with Sb/Bi=1.0 showed homogeneous microstructure compared with the others, which enabled improved varistor characteristics. Doping of Co increased the nonlinearity and the potential barrier height of ZBS, which is thought to stem from improved sintering behavior such as homogenized microstructure due to size reduction and even distribution of the second phase and suppressed volatility of Bi2O3, as well as the improvement in the potential barrier structure via increased donor and interface electron trap densities.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.361-362
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• 2005

Antimony doped tin oxide(ATO) nano powders have been synthesized by homogeneous precipitation method using $SnCl_4\cdot5H_2O$ for precursor, $SbCl_3$ as doped material and urea. The hydrolysis of urea and conductive mechanism and Heat treatment was performed at the temperature from $500^{\circ}C$ to $700^{\circ}C$ in air. The ATO nano powders are characterized by means of Thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffraction (XRD), Brunauer, Emmett, and Teller adsorption (BET), Scanning electron microscopy (SEM) ATO nano powders with an average size of nm and the highest surface area 129 $m^2g^{-1}$ are obtained.

• ETRI Journal
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• 제38권3호
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• pp.469-478
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• 2016

In this paper, we investigate the effects of pre-reducing Sb-doped $SnO_2$ (ATO) electrodes in viologen-anchored $TiO_2$ (VTO) nanostructure-based electrochromic devices. We find that by pre-reducing an ATO electrode, the operating voltage of a VTO nanostructure-based electrochromic device can be lowered; consequently, such a device can be operated more stably with less hysteresis. Further, we find that a pre-reduction of the ATO electrode does not affect the coloration efficiency of such a device. The aforementioned effects of a pre-reduction are attributed to the fact that a pre-reduced ATO electrode is more compatible with a VTO nanostructure-based electrochromic device than a non-pre-reduced ATO electrode, because of the initial oxidized state of the other electrode of the device, that is, a VTO nanostructure-based electrode. The oxidation state of a pre-reduced ATO electrode plays a very important role in the operation of a VTO nanostructure-based electrochromic device because it strongly influences charge movement during electrochromic switching.