• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.307-310
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• 1999

Using Se as a photoconductive element and ZnS as a luminescent element, a Se/ZnS thin film device for light amplifier applications was fabricated and its characteristics were investigated. The Se/ZnS thin film light amplifier was fabricated by evaporating the ZnS thin film on an ITO(Indium Tin Oxide) glass and the Se thin film on the ZnS thin film in sequence. The results of the characteristics investigation are summarized as follows: (1) When the frequency of an excitation voltage was increased, both the brightness response and the brightness saturation of the Se/ZnS thin film light amplifier began to start at a higher light input. (2) The gain of the Se/ZnS thin film light amplifier was dependent upon the amplitude and the frequency of the excitation voltage as well as an external light input. (3) When the Se/ZnS thin film light amplifier was excited by a direct current of a constant voltage, the frequency of the output brightness was\\`equal to the frequency of the input light applied. When the light amplifier was excited by a sinusoidal voltage of 60 Hz, the frequency of the output brightness was 120 Hz.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.75-80
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• 1993

This study describes a non-invasive optical sensor and system in order to obtain oxygen saturation of blood, in-vitro. The sensor contains LED 665nm and 805nm of wavelength for light source and PIN photodiode for light detector in flat pack. The sensor system for measurement of oxygen saturation has breadboarded, including signal amplifier, filter, displayer, A/D converter, microprocessor and memory. Experimental set-up for non-invasive measurement of oxygen saturation in-vitro was done. When the variation of oxygen saturation is compared with that of each wavelength, the variation of 665nm is more than that of 805nm by five times. As oxygen saturation varies from 100% to 60%, and the reflection ratio (R805/R665) is changed linearly. The oxygen saturation in $100%{\sim}60%$ range can be measured with about 5% resolution by the developed sensor, such that if this sensor connects with the main artery and vein, the artificial heart can be controlled rapidly and precisely from measurement of the sensor.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.69-75
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• 1998

We demonstrate wavelength conversion of 2.5Gb/s optical signals by four-wave mixing (FWM) in a semiconductor optical amplifier (SOA). We investigate the effect of input pump and signal powers on the coversion efficiency, optical signal-to-noise ratio (OSNR) and extinction ratio to be a measure of performance in a wavelength converter. As a result, we show that the maximum bit error rate (BER) performance can be obtained by co promising among high-vonversion efficiency (minimum Pprobe), high-OSNR (maximum Pprobe) and low-cross-gain saturation effects (Pprobe kept at least 6dB weaker than Ppump). In our experiment, we obtain optimum performance at +3 dBm pump power and -6dBm signal power. The power penalty incurred in the wavelength conversion can be minimized by careful selection of the input pump and signal powers. We show that about 0.5dB power penalty for 3.2nm wavelength coversion at 10-10 BER is achievable.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.3
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• pp.434-439
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• 2002

본 연구는 파장 분할 다중화(WDM：Wavelength Division Multiplexing) 방식 전송 시스템 (Transmission System)에 사용되는 어븀 첨가 광섬유 증폭기(EDFA : Erbium-Doped Fiber Amplifier)의 이득 제어(Gain Control) 방법에 관한 것으로 어븀 첨가 광섬유에서 상호 이득 포화(Cross Gain Saturation) 현상, 이득 비동질 (Gain In-homogeneity) 특성, 그리고 어븀 이온의 밀도 반전(Population Inversion)의 변화 에 의해 출력되는 다 파장 광 신호들의 광 세기가 각기 다르게 출력되는 현상을 고출력을 내도록 구성된 어븀 첨가 광섬유 증폭기와 고속 제어기를 구성하여 위 현상들을 억제하며 이득을 제어하기 위한 레이저 다이오드(Laser Diode : LD)의 제어전압 조사하고, 얻어진 결과들을 토대로 이득 제어에 적합한 방법을 제시하고 제어기를 설계한다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.5
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• pp.45-51
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• 1993

An erbium doped fiber amplifier(EDFA) pumped by aingle 1.48$\mu$m LD was fabricated, and its gain and noise characteristics were measured. As a signal source, 1548 nm wavelength DFB LD was used. The small signal net gain of the EDFA module was 21.8 dB with maximum gain coefficient 0.7dB/mW for the erbium fiber length of 17.6 m, the pump power of 58 mW, and an input signal power of -25 dBm, respectively. The saturation power of the EDFA was 1 dBm for the input signal power of -5 dBm and the noise figure, measured by using an optical spectrum analyzer, was 5.8 dB for the input signal power of -40 dBm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.718-727
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• 2014

In a wireless communications system, a predistorter is often used to compensate for the nonlinear distortions that result from operating a power amplifier near the saturation region, thereby improving system performance and increasing the spectral efficiency for the communication channels. This paper presents a new VLSI design for the polynomial digital predistorter (DPD). The proposed DPD uses a Coordinate Rotation Digital Computing (CORDIC) processor and a PD process with a fully-pipelined architecture. Due to its simple and regular structure, it can be a competitive design when compared to existing polynomial-type and approximated DPDs. Implementing a fifth-order distorter with the proposed design requires only 43,000 logic gates in a $0.35{\mu}m$ CMOS standard cell library.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.293-297
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• 2002

본 연구는 파장 분할 다중화(WDM： Wavelength Division Multiplexing) 방식 전송 시스템 (Transmission System)에 사용되는 어븀 첨가 광섬유 증폭기(EDFA： Erbium-Doped Fiber Amplifier)의 이득 제어(Cain Control) 방법에 관한 것으로 어븀 첨가 광섬유에서 상호 이득 포화 (Cross Cain Saturation) 현상, 이득 비동질(Cain In-homogeneity) 특성, 그리고 어븀 이온의 밀도. 반전(Population Inversion)의 변화에 의해 출력되는 다 파장 광 신호들의 광세기가 각기 다르게 출력되는 현상을 고출력을 내도록 구성된 어븀 첨가 광섬유 증폭기와 고속 제어기를 구성하여 위 현상들을 억제하며 이득을 제어하기 위한 레이저 다이오드(Laser Diode : LD)의 제어전압 조사하고, 얻어 진 결과들을 토대로 이득 제어에 적합한 방법을 제시하고 제어기를 설계한다.

• ETRI Journal
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• v.27 no.4
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• pp.411-417
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• 2005

$Pr^{3+}-doped$ selenide glass optical fiber, which guarantees single-mode propagation of above at least 1310 nm, has been successfully fabricated using a Ge-Ga-Sb-Se glass system. Thermal properties such as glass transition temperature and viscosity of the glasses have been analyzed to find optimum conditions for fiber drawing. Attenuation loss incorporating the effects of an electronic band gap transition, Rayleigh scattering, and multiphonon absorption has also been theoretically estimated for the Ge-Ga-Sb-Se fiber. A conventional double crucible technique has been applied to fabricate the selenide fiber. The background loss of the fiber was estimated to be approximately 0.64 dB/m at 1650 nm, which can be considered fairly good. When excited at approximately 1470 nm, $Pr^{3+}-doped$ selenide fiber resulted in amplified spontaneous emission and saturation behavior with increasing pump power in a U-band wavelength range of 1625 to 1675 nm.

• Current Optics and Photonics
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• v.2 no.6
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• pp.563-567
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• 2018

We propose and experimentally demonstrate a simple tunable photonic microwave band-pass filter with high resolution using a reflective semiconductor optical amplifier (RSOA) and an optical time-delay line. The RSOA is used as a gain medium for generating cross-gain modulation (XGM) effect as well as an optical source. The optical source provides narrow spectral width by self-injection locking the RSOA in conjunction with a partial reflection filter with specific center wavelength. Then, when the RSOA is operated in the saturation region and the modulated recursive signal is injected into the RSOA, the recursive signal is inversely copied to the injection locked optical source due to the XGM effect. Also, the tunability of the passband of the proposed microwave filter is shown by controlling an optical time-delay line in a recursive loop.