• Title/Summary/Keyword: Saturated vapor

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Studies on Silk Fibroin Membranes(I) -Structure of Silk Fibroin Membranes and Their properties- (Silk Fibroin 막에 관한 연구(I) -Silk Fibroin막의 구조특성-)

  • 최해욱;박수민;김경환
    • Textile Coloration and Finishing
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    • v.6 no.1
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    • pp.62-70
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    • 1994
  • Silk fibroin was dissolved in 9.3 M LiBr aqueous solution at 4$0^{\circ}C$ for 1 hour. The dissolved silk fibroin was regenerated by casting the dialyzed solution into the membrane. The freshly prepared silk fibroin membrane was soluble in water and was. mainly consisted of random coil conformation. By the treatments in saturated water vapor at 3$0^{\circ}C$ and in 75% ethanolic aqueous solution (V/V), the insoluble membranes were obtained and the structure and morphology of those were investigated for the structure by means of X-ray diffraction analysis, infrared spectroscopy, thermal analysis. Rheovibron and scanning electron micrograph. Silk II type crystals were obtained by treating amorphous silk fibroin membrane in the random coil conformtion with 75% ethanol solution(V/V). Crystallization to silk II type crystals occured even after a few minutes, and a large number of silk II type crystals were formed after 30 mins. On the other and, the membrane treated in saturated water vapor was composed of the mixtures of silk I and silk II type crystals. A large number of silk I and silk II type crystals were formed after 24 hours. The micro brownian motion in the amorphous regions of silk fibroin membrane started at about 175~185$^{\circ}C$. $\alpha$ dispersion appeared at about 20$0^{\circ}C$ in the amorphous membrane, and at about 22$0^{\circ}C$ in the crystalline membrane. The crystallization of random coil conformation to silkII type crystals occured at about 215$^{\circ}C$. The surface, bottom and cross-section of the membranes were observed by scanning electrom microscope. Fine forms alike spherulites appeared at the surface of crystalline membrane.

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Conditions of Desalination with Reduced Pressure Evaporation Device (감압증발장치와 해수담수화의 조건)

  • Ji, Ho;Yun, Sung Yeol;Lee, Seung Won;Moon, Deok Soo;Lee, Ho Saeng;Kim, Hyeon Ju
    • Journal of the Korean Society for Marine Environment & Energy
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    • v.17 no.1
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    • pp.8-12
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    • 2014
  • Reduced pressure evaporation applies the principle of lowering water's boiling point by reducing the pressure. It uses the relation between temperature and pressure to reduce energy consumption needed for elevating temperature. As the result, the highest evaporation was observed at $80^{\circ}C$ and -40 cmHg applying saturated vapor pressure depending on different seawater temperature. It was found that the higher concentration in the factor test experiment depending on seawater concentration induced the higher evaporation. Also, in the factor test experiment, the amount of evaporation increased as the pressure decreased. It is concluded that the most important factor of evaporation was concentration, the second important factor was temperature, and the least important factor was pressure. Through this experiment, optimized conditions of desalination with reduced pressure evaporation device were verified.

Modelling the wide temperature range of steam table using the neural networks (신경회로망을 사용한 넓은 온도 범위의 증기표 모델링)

  • Lee, Tae-Hwan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.11
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    • pp.2008-2013
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    • 2006
  • In numerical analysis on evaluating the thermal performance of the thermal equipment, numerical values of thermodynamic properties such as temperature, pressure, specific volume, enthalpy and entropy are required. But the steam table itself cannot be used without modelling. In this study applicability of neural networks in modelling the wide temperature range of wet saturated vapor region was examined. the multi-layer neural network consists of a input layer with 1 node, two hidden layers with 10 and 20 nodes respectively and a output layer with 6 nodes. Quadratic and cubic spline interpoations methods were also applied for comparison. Neural network model revealed similar percentage error to spline interpolation. From these results, it is confirmed that the neural networks could be powerful method in modelling the wide range of the steam table.

Development of Black Liquor Multiple-effect-evaporation Process Model to Predict Steam Savings (스팀 절감량 예측을 위한 흑액 다중 효용 증발 공정 모델 개발)

  • Kim, Yurim;Lim, Jonghun;Choi, Yeongryeol;Kim, Taebok;Park, Hansin;Cho, Hyungtae;Kim, Junghwan
    • Korean Chemical Engineering Research
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    • v.60 no.1
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    • pp.25-33
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    • 2022
  • This study developed the black liquor evaporation process models using the multiple-effect-evaporator according to the number of effects to predict steam consumption. The developed models were divided into the black liquor preheating and evaporation processes, and a virtual reboiler was added to predict steam consumption. In simulation results, the steam consumption in the double-effect-evaporator was decreased by 48.9 %, and as the number of effects increased, the steam consumption was decreased. Finally, the steam consumption in the octuple-effect-evaporator was decreased by 61.2 %. Also, this study suggests a strategy for deriving the optimal number of effects in the process by analyzing the latent heat recovered from the saturated vapor produced in the multiple-effect-evaporator and the amount of saturated vapor produced by each effect.

The Effect of Ambient Air Condition on a Hot Steel Plate Cooled by Impinging Water Jet (주변공기조건이 충돌수분류에 의한 고온강판의 냉각에 미치는 영향 연구)

  • Lee, Pil-Jong;Choi, Hae-Won;Lee, Seung-Hong
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.24 no.1
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    • pp.29-38
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    • 2000
  • It is observed that the cooling capacity of impinging water jet is affected by the seasonal conditions in steel manufacturing process with large scale. To confirm this phenomena, the cooling experiments of a hot steel plate by a laminar jet were conducted for two different initial ambient air temperature($10^{\circ}C$ and $40^{\circ}C$) in a closed chamber, and an inverse heat conduction method is applied for the quantitative comparison. It is found that the cooling capacity under $10^{\circ}C$ air temperature is lower than that under $40^{\circ}C$, as is the saturated water vapor is more easily observed, and the amount of total extracted heat in the case of $10^{\circ}C$ is smaller by nearly 15% than that of $40^{\circ}C$ case. From these results, it is thought that the quantity of water vapor, which could be absorbed until saturation, effects on the mechanism of boiling heat transfer.

Effeet of Al2O3, MgO and SiO2 on Sintering and Hydration Behaviors of CaO Ceramics

  • Kim, Do-Kyung;Cho, Churl-Hee;Goo, Bong-Jin;Lee, Kee-Sung
    • Journal of the Korean Ceramic Society
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    • v.39 no.6
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    • pp.528-534
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    • 2002
  • CaO ceramics were prepared by conventional sintering process and their hydration behaviors were evaluated by measuring weight increment on saturated water vapor pressure at ambient temperature. CaCO$_3$ and limestone were used as CaO source materials and $Al_2$O$_3$, MgO and SiO$_2$ were added as sintering agents. $Al_2$O$_3$ was a liquid phase sintering agent to increase densification and grain growth rates, whereas MgO and SiO$_2$, densification and grain growth inhibitors. Regardless of composition, all of the prepared CaO ceramics showed the improved hydration resistance as bulk density increased. Especially, when bulk density was more than 3.0 g/㎤, there was no weight increment after 120 h of hydration. Therefore, to decrease contact area between CaO and water vapor by increasing bulk density with the $Al_2$O$_3$ sintering additive was effective for the improvement of CaO hydration resistance.

Metal-Organic Chemical Vapor Deposition of $Pb(Zr_xTi_{1-x})O_3$ Thin Films for High-Density Ferroelectric Random Access Memory Application

  • Lee, June-Key;Ku, June-Mo;Cho, Chung-Rae;Lee, Yong-Kyun;Sangmin Shin;Park, Youngsoo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.3
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    • pp.205-212
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    • 2002
  • The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

액체 금속로의 가상 사고 해석

  • 석수동;한도희
    • Nuclear industry
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    • v.20 no.6 s.208
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    • pp.31-44
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    • 2000
  • 본 연구에서 액체금속로의 노심용융(core meltdown)으로 인한 초 즉발 임계(super-prompt critical)의 출력 폭주 사고시, 노심의 반응도 및 열수력 특성 변화와 에너지 방출량등을 계산하기 위하여, Bethe-Tait 방버론을 수정, 보완한 분석 모델이 개발되었다. 주요 보완 내용으로서는, 금속 연료 노심의 단상 액체 영역에서의 선형의(Linear) threshold 형태의 상태 방정식뿐만 아니라 포화 증기(saturated fuel vapor) 영역에서의 상태 방정식이 개발되었고, 이에 따른 노심 붕괴 반응도(disassembly reactivity)의 분석 모델이 개발되었다. 또한 도플러 반응도 효과를 고려하기 위한 분석모델도 아울러 개발되었다. 상기 보완 모델을 실행할 수 있는 수치 해석 프로그램이 개발되었고, 이를 활용하여 KALIMER에서 HCDA가 발생하였을 경우 노심에서의 에너지 방출량 계산이 수행되었다. 분석결과 도플러 효과와 포화 증기 영역에서의 압력 증가 및 노심팽창의 중요성이 확인되었다. 도플러 효과가 고려되지 않을 경우 HCDA는 분석된 모든 반응도 삽입률에 대하여 폭발적인 에너지 방출과 함께 사고가 종결되는 것으로 평가되었다. 그러나 도플러 상수가 최적 평가치인 -0.002인 경우 50$/s이하의 반응도 삽입률에서는 노심은 비등점(0.8KJ/g)에 도달치 않았으며, 설계 기준 사고인 100$/s의 경우에도 노심은 포화 증기 영역에 머물고 압력이 급격히 증가하는 단상(single phase)액체 영역의 threshold 값에 미치지 않기 때문에 사고는 핵연료 증기(vapor)의 점진적인 분산과 함께 종결되는 것으로 분석되며, 총 에너지 발생량은 약 1,800MJ로서 기계적 손상 에너지로 전환되는 분율을 고려할 때 KALIMER 원자로 용기의 구조 설계 기준치에 비해 상당한 여유도를 갖는 것으로 평가되었다.

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The Mg Solid Solution far the P-type Activation of GaN Thin Films Grown by Metal-Organic Chemical Vapor Deposition

  • Kim, KeungJoo;Chung, SangJo
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.4
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    • pp.24-29
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    • 2001
  • GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

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Stability of Organic Thin-Film Transistors Fabricated by Inserting a Polymeric Film (고분자막을 점착층으로 사용한 유기 박막 트랜지스터의 안정성)

  • Hyung, Gun-Woo;Pyo, Sang-Woo;Kim, Jun-Ho;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.61-62
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    • 2006
  • In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

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