• Geomechanics and Engineering
• /
• 제22권5호
• /
• pp.449-460
• /
• 2020

The double-lane arrangement model is frequently used in underground coal mines because it is beneficial to improve the mining efficiency of the working face. When the double-lane arrangement is used, the service time of the reserved roadway increases by twice, which causes several difficulties for the maintenance of the roadway. Given the severe non-uniform deformation of the reserved roadway in the Buertai Coal Mine, the stress distribution law in the mining area, the failure characteristics of roadway and the control effect of support resistance (SR) were systematically studied through on-site monitoring, FLAC 3D numerical simulation, mechanical model analysis. The research shows that the deformation and failure of the reserved roadway mainly manifested as asymmetrical roof sag and floor heave in the region behind the working face, and the roof dripping phenomenon occurred in the severe roof sag area. After the coal is mined out, the stress adjustment around goaf will happen to some extent. For example, the magnitude, direction, and confining pressure ratio of the principal stress at different positions will change. Under the influence of high-stress rotation, the plastic zone of the weak surrounding rock is expanded asymmetrically, which finally leads to the asymmetric failure of roadway. The existing roadway support has a limited effect on the control of the stress field and plastic zone, i.e., the anchor cable reinforcement cannot fully control the roadway deformation under given conditions. Based on obtained results, using roadway grouting and advanced hydraulic support during the secondary mining of the panel 22205 is proposed to ensure roadway safety. This study provides a reference for the stability control of roadway with similar geological conditions.

• Wind and Structures
• /
• 제23권6호
• /
• pp.485-503
• /
• 2016

To investigate the nonlinear aerostatic stability of the Hutong cable-stayed rail-cum-road bridge with ultra-kilometer main span, a FEM bridge model is established. The tri-component wind loads and geometric nonlinearity are taken into consideration and discussed for the influence of nonlinear parameters and factors on bridge resistant capacity of aerostatic instability. The results show that the effect of initial wind attack-angle is significant for the aerostatic stability analysis of the bridge. The geometric nonlinearities of the bridge are of considerable importance in the analysis, especially the effect of cable sag. The instable mechanism of the Hutong Bridge with a steel truss girder is the spatial combination of vertical bending and torsion with large lateral bending displacement. The design wind velocity is much lower than the static instability wind velocity, and the structural aerostatic resistance capacity can meet the requirement.

• The Transactions of the Korean Institute of Electrical Engineers A
• /
• 제55권12호
• /
• pp.555-560
• /
• 2006

As it has been reported that more than 60% of transmission line faults occurs due to lightning strokes, lighting is one of concerned issues in electric power utility company. Most of transmission line is double circuit in Korea. Double circuit outages account for 33.7 percent of total lightning faults from 1996 to 2004. Even though transmission fault might be cleared shortly by protective system, it could deteriorate the power quality accompanied with sag or flicker. Moreover, double circuit fault may lead to more aggravated situation, for instance, blackout. To Protect transmission lines from lightning stroke, reduction of tower footing resistance, multiple ground wires and unbalanced insulation in double circuit lines have been adopted. In this paper, we would like to introduce insulation design standards for lightning protection of Korea Electric Power Corporation.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• 제22권1호
• /
• pp.5-10
• /
• 2012

In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.

• Journal of Electrical Engineering and Technology
• /
• 제2권4호
• /
• pp.445-451
• /
• 2007

Voltage quality problems such as voltage sag, swell, flicker, undervoltage, and overvoltage have been of great concern for both utilities and customers over the last decade. In this paper, a new approach based on the $H_{\infty}$ algorithm to monitor voltage disturbances is presented. The key idea of this approach is to estimate the amplitude of the fundamental component of distorted and noisy voltage waveform instantaneously, and then the information can be extracted from the estimated envelope to identify and classify different voltage related power quality problems. The $H_{\infty}$ algorithm is characterized by a fast tracking, unlike that of existing techniques. The $H_{\infty}$ algorithm outperforms the Kalman Filter (KF) by its fast convergence and robust tracking performance against non-Gaussian noise. The paper investigates the effects of various types of noise on the performance of the $H_{\infty}$ algorithm. Digital simulation results confirm the validity and accuracy of the proposed method. The proposed $H_{\infty}$ algorithm is examined by tracking the flicker produced by a resistance welder simulated in the PSCAD/EMTDC package.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제26권2호
• /
• pp.134-139
• /
• 2013

When the accident occurred in power distribution system, it needs to control efficiently the fault current according to the fault angle and location. The flux-lock type superconducting fault current limiters (SFCL) can quickly limit when the short circuit accidents occurred and be made the resistance after the fault current. The flux-lock type SFCL has a single triggering element, detects and limits the fault current at the same time regardless of the size of the fault current. However, it has a disadvantage that broken the superconductor element. If the flux-lock type SFCL has separated structure of the triggering element and the limiting element, when large fault current occurs, it can reduce the burden of power and control fault current to adjust impedance. In this paper, this system is composed by triggering element and limiting element to analyze operation of limiting current. When the fault current occurs, we analyzed the limiting and operating current characteristics of the two triggering current level, and the compensation characteristics of bus-voltage sag according to the fault angle and location.

• Rapid Communication in Photoscience
• /
• 제3권2호
• /
• pp.28-31
• /
• 2014

Loss of chlorophyll is the visible symptom of leaf senescence and staygreen refers to the delayed leaf senescence in plants. The staygreen gene (SGR) in rice (Oryza sativa L.) has been identified as its mutation maintains greenness during leaf senescence, and encodes a chloroplast protein required for the initiation of chlorophyll breakdown in plants. In this study, we isolated a rice SGR-homologous gene in creeping bentgrass (Agrostis stolonifera L.), and transgenic creeping bentgrass plants were obtained by introducing pCAMBIA3301 vector harboring antisense SGR gene under control of the senescence-specific SAG12 promoter. Transgenic plants were selected by herbicide resistance assays and genomic integration of the transgenes was confirmed by PCR analysis. Subsequent analyses demonstrated the staygreen phenotype of the transgenic creeping bentgrass plants with decreased chlorophyll loss during leaf senescence. These results suggest that the antisense SGR expression in creeping bentgrass delays leaf senescence, which provides a way to develop genetically engineered turfgrass varieties with the commercially useful staygreen trait.

• Journal of Welding and Joining
• /
• 제30권3호
• /
• pp.38-43
• /
• 2012

In this study, active metal brazing methods for $ZrO_2$ and Ti alloy were discussed. To get a successful metal-ceramic bonding, various factors (melting temperature, corrosion, sag resistance, thermal expansion coefficient etc. of base materilas and filler metal) should be considered. Moreover, in order to clarify bonding between the metal and ceramic, the mechanism of the interfacial structure of the joints should be identified. The driving force for the formation of metal and ceramic interfaces is the reduction of the free energy which occurs when their contact becomes complete. Interfacial bonding depends on the material combinations and the bonding processes. This study describes the bonding between ceramic and metal in an active metal brazing.

• Journal of Ceramic Processing Research
• /
• 제13권spc1호
• /
• pp.128-131
• /
• 2012

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
• /
• pp.163-163
• /
• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.