• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.1-6
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• 2010

A comparative analysis of quantum-mechanical and classical simulation regarding corner effect in a Saddle MOSFET has been carried out using a 3-D numerical simulator. The comparison has shown that quantum simulation gives correct description of device by providing accurate peak E-density position and magnitude at the Si-fin cross-section, hence accurate analysis of corner effect and its impact on device threshold voltage (Vth) characteristics is carried out. Moreover, rounding the Si-fin comers or lowering the body doping have been shown as two possible techniques to suppress the undesirable corner effect.