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Analysis and Suppression of the Corner Effect in a Saddle MOSFET Including Quantum Confinements Effects  

Pervez, Syed Atif (School of Electrical Engineering and Computer Science, Seoul National University)
Kim, Hee-Sang (School of Electrical Engineering and Computer Science, Seoul National University)
Rehman, Atteq-Ur (School of Electrical Engineering and Computer Science, Seoul National University)
Lee, Jong-Ho (School of Electrical Engineering and Computer Science, Seoul National University)
Park, Byung-Gook (School of Electrical Engineering and Computer Science, Seoul National University)
Shin, Hyung-Cheol (School of Electrical Engineering and Computer Science, Seoul National University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.47, no.3, 2010 , pp. 1-6 More about this Journal
Abstract
A comparative analysis of quantum-mechanical and classical simulation regarding corner effect in a Saddle MOSFET has been carried out using a 3-D numerical simulator. The comparison has shown that quantum simulation gives correct description of device by providing accurate peak E-density position and magnitude at the Si-fin cross-section, hence accurate analysis of corner effect and its impact on device threshold voltage (Vth) characteristics is carried out. Moreover, rounding the Si-fin comers or lowering the body doping have been shown as two possible techniques to suppress the undesirable corner effect.
Keywords
Corner effect; Quantum-mechanical; Saddle MOSFET; Si-fin;
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