• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1437-1439
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• 2009

Electrical and optical properties of $SiO_2$-doped ZnO (SZO) films on the corning 7059 glass substrates by using rfmagnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates at 3 wt.% is $4^{\circ}$A/s. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap decreases from 3.52 to 3.33 eV with an increase in thickness. X-ray diffraction patterns show that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO films at the $SiO_2$ contents of 2 wt.% shows the resistivity of about $3.8{\times}10^{-3}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 한국진공학회지
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• 제17권1호
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• pp.9-15
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• 2008

다양한 이원자 무기 박막과 이들의 무기 혼합 박막들이 Ca cell 의 봉지 층으로서 전자-선 증착법에 의해 증착되었다. 이러한 Ca cell들은 대기 중에 노출되었을 때 봉지 층을 통과한 수분들이 Ca cell에 흡수되면서 시간이 지남에 따라 Ca cell들은 점진적으로 투명해진다. 이는 가시광 영역에서 Ca cell의 광투과 스펙트럼의 변화를 대기 중 노출시간의 함수로 나타낼 수 있다. Ca cell에서의 수분 흡수가 포화되는 시간 즉, 광투과 스펙트럼이 더 이상 변하지 않는 포화시간을 비교함으로써 봉지층으로 도입된 다양한 무기 박막들의 투습 방지 특성을 조사하였다. $SiO_2$에 $SnO_2$ 또는 ZnO가 첨가된 무기 복합 박막 STO($SiO_2-SnO_2$)와 SZO($SiO_2$-ZnO) 박막은 이원자 무기 박막들과 비교하여 매우 탁월한 투습 방지 효과를 보여주며, 또한 무기 박막의 수분 투과 특성에 영향을 미치는 주요 인자는 박막의 극성(polarizability)과 치밀도(packing density)임이 확인 되었다.