• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• 한국물환경학회지
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• 제25권4호
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• pp.515-521
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• 2009

In this study, the applicability of $CaCO_3$ as a seed material for crystallization reaction was tested. $CaCO_3$ was ground to lesser than 425 mesh and was made to media mixed with binder. Batch experiment was to investigate the ${PO_4}^{3-}-P$ removal efficiency of different parameters such as $CaCO_3$ dosage and binder ratio, size, type and mass of media. In addition, the effect of phosphorus removal from wastewater was tested using a lab-scaled crystallization reactor. At the results of the batch test, phosphorus removals were improved with increasing $CaCO_3$ dosage and media mass but were decreased with increasing media size. Moreover, phosphorus removals were influenced by specific surface area but media type. The average T-P and ${PO_4}^{3-}-P$ removal efficiency in a lab-scaled crystallization reactor with $CaCO_3$ media for wastewater were shown to be 60.2% and 60.3% for 18 days of operation time.

• 대한화학회지
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• 제31권6호
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• pp.582-589
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• 1987

SIAS unit로 개질된 PET의 열적 성질을 조사한 결과, SIAS unit의 함량이 증가함에 따라 $T_g$는 증가, $T_m$은 감소하는 경향을 보였으며 결정화속도는 크게 감소함을 관찰할 수 있었다. 결정화속도의 감소는 극성과 크기가 큰 술폰산 나트륨기가 쇄의 유연성을 크게 감소시켜 결정표면으로 확산 이동한 고분자 쇄가 결정형태로 재배치 하는 것을 방해하는 것이 중요한 원인으로 생각되며, 결정성장기구는 SIAS unit의 함량에 의해 크게 좌우되어 SIAS unit의 함량이 증가할 수록 3차원 공간으로의 결정 성장이 제한 받음을 관찰 할 수 있다.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1716-1724
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• 2018

Single crystal of organic lead halide ($CH_3NH_3PbX_3$; $CH_3NH^+_3$ = methylammonium (MA), $X=Cl^-$, $Br^-$, $I^-$) is the best candidate for material intrinsic property studies due to no grain boundary and high crystal quality than the film having a lot of grain boundary and surface defects. The representative crystallization methods are inverse temperature crystallization (ITC) and anti-solvent vapor assisted crystallization (AVC). Herein, we report bandgap modulated organic lead halide single crystals having a bandgap ranging from ~ 2.1 eV to ~ 3 eV with ITC and AVC methods. The bandgap modulation was achieved by controlling the solvents and chloride-to-bromide ratio. Structural, optical and compositional properties of prepared crystals were characterized. The results show that the crystals synthesized by the two crystallization methods have similar properties, but the halide ratios in the crystals synthesized by the AVC method are controlled more quantitatively than the crystals synthesized by ITC.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.89-93
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• 1995

Effects of hydrogenation in amorphous silicon rile growths on Solid Phase Crystallization (SPC) was investigated using x-ray diffractometry, energy dispersive Spectroscopy, and Raman spectrum. Interdiffusion of barium(Ba) and aluminum(Al) compounds of corning substrate was observed in both of rf sputtering and LFCVD films under the low temperature(580$^{\circ}C$) annealing. Low degree of crystallinity resulted from the interdiffusion was obtained. Highly applicable degree of crystallinity was obtained through the mechanical damage induced surface activation on amorphous silicon films. X-ray diffraction intensity of (111) orientation was used to characterize the degree of crystallinity of SPC. Nucleation and growth rate in SPC could be controllable through the employed surface treatment. IIydrogenated LPCVD films showed the superior crystallinity to non-hydrogenated sputtering films. Insignificant effects of activation treatment in sputtered film was of activation treatment in sputtered film was observed on SPC.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.191.1-191.1
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• 2014

Crystallization has become the most popular technique for the separation of enantiomers since the Pasteur's discovery. To investigate mechanism of crystallization of chiral molecules, it is necessary to study self-assembled structures on two-dimensional surface. Here, we have studied two-dimensional self-assembled structures of an unnatural amino acid, (S)-${\beta}$-methyl naphthalen-1-${\gamma}$-aminobutyric acid (${\gamma}^2$-1-naphthylalanine) on Au(111) surface at 150 K using scanning tunneling microscopy (STM). At initial stage, we found two chiral honeycomb structures which are counter-clockwise and clockwise configurations in one domain. The molecules are arranged around molecular vacancies, dark hole. By further increasing the amounts of adsorbed ${\gamma}^2$-1-naphthylalanine, a well-ordered square packed structure was observed. In addition, we found the other structure that molecules were trapped in the pore of the hexagonal molecular assembly.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.41-41
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• 2001

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.122.3-122
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• 1998

• 공업화학
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• 제8권6호
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• pp.939-944
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• 1997

금속 지지체 표면에 연속적인 결정화방법으로 제올라이트-X의 피막을 형성시켜 필름을 제조하였다. 금속 표면에서의 제올라이트 결정의 성장은 금속 성분에 따라 많은 차이가 있으며 본 연구에서 사용한 stainless steel 316은 표면을 산처리하여 표면의 크롬층을 파괴하여야 제올라이트 핵 형성이 용이 하였다. 연속적인 결정화 방법에 의해 제올라이트 결정 성장을 관찰하기 위해 12시간을 주기로 제올라이트-X 조성물($6.36Na_2O-Al_2O_3-5.3SiO_2-190.8H_2O$)을 계속 공급하였다. 그리고 금속 표면과 제올라이트 핵의 생성 사이의 상호 관계와 메카니즘에 대해 조사 하였다. 그 결과 겔 조성물중 $SiO_2/Al_2O_3$의 비가 높을수록 금속 표면에 제올라이트 핵 형성이 용이하였으며, 금속 표면에 부착된 제올라이트 입자는 선형 성장을 계속하고 성장된 입자간에 축합반응에 의해 서로 연결되어 하나의 결정 형태로 된다는 것을 알 수 있었다. 필름 형태로 합성된 시료를 XRD 및 SEM으로 분석한 결과 제올라이트-X임을 확인하였다.

• 전자공학회논문지D
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• 제35D권5호
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• pp.33-39
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• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.