• 한국세라믹학회지
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• 제30권7호
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• pp.535-542
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• 1993

It was investigated in this study that a preparation method, activation energy, surface area, pore volume, pore size distribution and DTA analysis of the dry gel in process of producing monolithic porous gel in Li2O-Al2O3-TiO2-SiO2 system by the sol-gel technique using metal alkoxides. Activation energy for gellation according to the variation of water concentration and the kind of catalysts ranged from 10 to 20kcal/mole. Monolithic dry gels were prepared after drying at 9$0^{\circ}C$ when the amount of water for gellation was 4~8 times more than the stoichiometric amount, that was necessary for the full hydrolysis of the mixed metal alkoxide. The specific surface area, the pore volume, the average pore radius of the dried gel at 18$0^{\circ}C$ according to the various kinds of catalyst were about 348~734$m^2$/g, 0.35~0.70ml/g and 10~35$\AA$, respectively. It showed that the dry gels were porous body. As a result ofthe analysis of DTA, it was confirmed that the exothermaic peaks at 715$^{\circ}C$ and 77$0^{\circ}C$ was clue to the crystallization of dried gel.

• 한국재료학회지
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• 제23권6호
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• pp.334-338
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• 2013

In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of $BaTiO_3$ thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of $BaTiO_3$ thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from $700^{\circ}C$. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/$BaTiO_3$ are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of $BaTiO_3$ thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed $BaTiO_3$ thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.57.2-57.2
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• 2011

Dye-sensitized solar cells (DSSC) have recently been developed as a cost-effective photovoltaic system due to their low-cost materials and facile processing. The production of DSSC involves chemical and thermal processes but no vacuum is involved. Therefore, DSSC can be fabricated without using expensive equipment. The use of dyes and nanocrystalline $TiO_2$ is one of the most promising approaches to realize both high performance and low cost. The efficiency of the DSSC changes consequently in the particle size, morphology, crystallization and surface state of the $TiO_2$. Nanocrystalline $TiO_2$ materials have been widely used as a photo catalyst and an electron collector in DSSC. Front electrode in DSSC are required to have an extremely high porosity and surface area such that the dyes can be sufficiently adsorbed and be electronically interconnected, resulting in the efficient generation of photocurrent within cells. In this study, DSSC were fabricated by an screen printing for the $TiO_2$ thin film. $TiO_2$ nanoparticles characterized by X-ray diffractometer (XRD) and scanning electron microscope (SEM) and scanning auger microscopy (SAM) and zeta potential and electrochemical impedance spectroscopy(EIS).In addition, DSSC module was modeled and simulated using the SILVACO TCAD software program. Improve the efficiency of DSSC, the effect of $TiO_2$ thin film thickness and $TiO_2$ nanoparticle size was investigated by SILVACO TCAD software program.

• 한국재료학회지
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• 제22권8호
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• 한국추진공학회지
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• 제20권2호
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• pp.18-23
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• 2016

유기 분자의 자기조립 다분자막은 기질의 표면에서 전자기적인 상호작용을 통해 자발적으로 형성된다. 본 연구에서는 이 기술을 응용하여 고에너지물질의 안전성과 취급용이성이 향상됨을 입증하였다. 최근 다양한 연구에서 고에너지물질 결정 내부의 결함은 물질의 안전성을 저하시키는 요인이므로, 결정 입자의 크기를 감소시키는 연구가 중요시되고 있다. 이에 따라, 결정화 방법을 통해 제조된 나노 수준의 고에너지물질을 사용하였으며, 자기조립 다분자막 기술을 응용하여 물질의 안전성을 향상시켰다. 입도/표면전하/마찰감도/정전기 전하 등을 측정하여 표면개질 여부를 확인하였다.

• Elastomers and Composites
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• 제44권3호
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• pp.274-281
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• 2009

음이온중합기구으로 나이론 6와 나이론공중합체를 합성하였다. 나이론탄성체는 카프록락탐과 이소시아네이트로 활성화된 폴리올을 음이온중합기구을 통해서 공중합을 하였다. 전기방사공정으로 제조된 나이론과 나이론공중합체는, FE-SEM으로 구조를 분석한 결과, 100$\sim$180 nm의 직경을 갖는 나노섬유들로 이루어진 다공성 부직포였다. DSC와 ATR FT-IR을 이용하여 결정화거동 및 구조를 분석하였다. 인장실험을 한 결과 나이론은 나이론탄성체에 비해서 인장강도는 크고, 신율은 감소된다. 결정영역인 PA블록과 무정형인 PE블록으로 된 나이론공중합체인 나이론 탄성체는 PE블록 비율이 클수록 인장강도는 낮아지고 신율은 증가된다. $O_2$와 $N_2$를 반응기체로 한 상압플라즈마로 전기방사된 나이론과 나이론탄성체의 부직포표면을 개질한 결과, 개질된 부직포표면은 표면개질 전보다 더 친수성을 보였으며 반면에 $CH_4$를 반응기체로 사용한 상압플라즈마로는 부직포표면을 개질하면 부직표면은 소수성을 나타내었다.

• 한국재료학회지
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• 제8권8호
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• pp.678-684
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• 1998

정압분자동역학 시뮬레이션에 의하여 주기경계조건을 지닌 L-J 입자들로 구성된 계의 액체-유리-결정 전이를 연구하였다. 원자체적과 엔탈피는 가열 및 냉각과정에서 온도의 함수로 계산되었다. 반경분포함수로부터 유도된 Wendt-Abraham비와 단거리규칙도를 나타내는 각도분포함수를 분석하여 액체, 유리 및 결정상태를 구분하였다. 초기 fcc 결정을 가열하여 얻은 액체상은 급냉시에 비정질화하나 서냉시엔 결정화하였다. 급냉으로 생긴 유리는 다시 서서히 가열하면 fcc로 결정화하였다. 자유표면을 지닌결정은 표면에서부터 용해가 시작되어 벌크에 비하여 낮은 온도에서 녹고 냉각시에는 빠른 냉각속도에서도 결정화가 쉽게 일어나는 경향을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.147-148
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• 2007

Dye-sensitized solar cell using conversion of solar energy to electrical energy appeared that which solves a environmental matter. The dye-sensitized solar cell uses nano-crystalline oxide semiconductor for absorbing dye. The $TiO_2$ is used most plentifully. The efficiency of the dye-sensitized solar cell changes consequently in the particle size, morphology, crystallization and surface state of the $TiO_2$. In this paper, we report The effect of titania$(TiO_2)$ thickness on the performance of dye-sensitized solar cells. Using doctor blade method, It produced the thickness of the $TiO_2$ with $7\;{\mu}m,\;10\;{\mu}m,\;13\;{\mu}m$. The efficiency was the best from $10{\mu}m$. It had relatively low efficiency on the thickness from $7\;{\mu}m\;to\;13\;{\mu}m$. The reason why it presents low efficiency on $7\;{\mu}m$ thickness is that excited electrons can not be delivered enough due to thin thickness of $7\;{\mu}m\;TiO_2$. And The reason why it presents low efficiency on $13\;{\mu}m$ thickness is that thick $13\;{\mu}m\;TiO_2$ can not penetrate the sunlight enough.

• 한국재료학회지
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• 제17권10호
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• pp.538-543
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• 2007

We fabricated the Ni plate by electroforming process and evaluated the microstructure, mechanical properties and wear behavior of the Ni plate. Specifically, the effects of addition of wetting agents, SF 1 and SF 2 solutions, on the microstructure and properties were investigated. The microstructure and surface morphology were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively, and friction coefficient was measured by the ball-on-disk method. We found that the microstructure and mechanical properties of Ni plate were changed with kind and amount of wetting agents used. The hardness and tensile strength of Ni plate formed without wetting agents was 228 Hv and 660.7 MPa, respectively, whiled when wetting agent was added, those were improved to be 739 Hv and 1286.3 MPa. These improvements were probably due to the finer grain size and less crystallization of Ni. In addition, when both wetting agents were added, the friction coefficient was reduced from 0.73 to 0.67 which is partially caused by the improved hardness and smooth surface.

• 한국표면공학회지
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• 제51권4호
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• pp.231-236
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• 2018

We report p-type electrical characteristics of the amorphous $La_2NiO_{4+{\delta}}$ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and $300^{\circ}C$ were amorphous in nature. Post-annealing of the thin film samples over $400^{\circ}C$ resulted in the nano-crystallization of the $La_2NiO_{4+{\delta}}$. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of $7.82{\times}10^{13}cm^{-3}$, and it could be increased as high as $3.51{\times}10^{22}cm^{-3}$ when the films were post-annealed in an oxygen atmosphere at $500^{\circ}C$. Such p-type conductivity behavior of the $La_2NiO_{4+{\delta}}$ films suggests that the amorphous and nano-crystallized $La_2NiO_{4+{\delta}}$ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.