• 제목/요약/키워드: SURFACE CRYSTALLIZATION

검색결과 432건 처리시간 0.025초

기상합성공정을 이용한 FePt 나노입자의 실시간 L10 상변화 (Real-time Transformation of FePt Nanoparticles to L10 Phase by the Gas Phase Synthesis)

  • 이기우;이창우;김순길;이재성
    • 대한금속재료학회지
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    • 제49권1호
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    • pp.46-51
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    • 2011
  • Real-time formation of $L1_0$ phase of FePt nanoparticles in the gas phase during ultrasonic-spray pyrolysis is first discussed in the present study. Without any post heat treatment, $L1_0$ phase of FePt nanoparticles appeared at the temperature above $900^{\circ}C$ in the gas phase synthesis. X-ray diffractometry (XRD) and transmission electron microscopy (TEM) studies revealed that FePt nanoparticles less than 10 nm in size contained small volume of $L1_0$ fct phase. However, in other samples obtained at the temperature below $900^{\circ}C$, iron oxide phase co-existed and no evidence of phase transformation was found. Thus, it is anticipated that the time of flight of particles required for crystallization and phase transformation was extended according to the increase of the collision rate. Finally, magnetic properties represented by coercivity and saturation magnetization and functional groups on the particle surface were discussed based on VSM and FT-IR results.

Al-Si 합금 융체로부터 순 실리콘의 원심분리 추출 (Extraction of Pure Si from an Al-Si Alloy Melt during Solidification by Centrifugal Force)

  • 조주영;강복현;김기영
    • 대한금속재료학회지
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    • 제49권11호
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    • pp.874-881
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    • 2011
  • The present study describes a new technique to extract the primary silicon from an Al-Si alloy melt using centrifugal force during its solidification. The primary silicon was separated from an Al-50 wt.%Si alloy by centrifugal force in the form of a foam, which facilitated subsequent acid leaching to extract the pure silicon due to its wide surface area. The foam recovery after centrifugal separation was decreased as centrifugal acceleration was increased. The final recovery after acid leaching became closer to the solid fraction of the alloy, which was calculated from the Al-Si binary phase diagram, with increasing centrifugal acceleration due to the effective removal of the attached Al on the foam. The purity of the primary silicon obtained by the centrifugal separation method was over 99.99%, with only aluminum being also present.

Physicochemical Property of Borosilicate Glass for Rare Earth Waste From the PyroGreen Process

  • Young Hwan Hwang;Mi-Hyun Lee;Cheon-Woo Kim
    • 방사성폐기물학회지
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    • 제21권2호
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    • pp.271-281
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    • 2023
  • A study was conducted on the vitrification of the rare earth oxide waste generated from the PyroGreen process. The target rare earth waste consisted of eight elements: Nd, Ce, La, Pr, Sm, Y, Gd, and Eu. The waste loading of the rare earth waste in the developed borosilicate glass system was 20wt%. The fabricated glass, processed at 1,200℃, exhibited uniform and homogeneous surface without any crystallization and precipitation. The viscosity and electrical conductivity of the melted glass at 1,200℃ were 7.2 poise and 1.1 S·cm-1, respectively, that were suitable for the operation of the vitrification facility. The calculated leaching index of Cs, Co, and Sr were 10.4, 10.6, and 9.8, respectively. The evaluated Product Consistency Test (PCT) normalized release of the glass indicated that the glass satisfied the requirements for the disposal acceptance criteria. Furthermore, the pristine, 90 days water immersed, 30 thermal cycled, and 10 MGy gamma ray irradiated glasses exhibited good compressive strength. The results indicated that the fabricated glass containing rare earth waste from the PyroGreen process was acceptable for the disposal in the repository, in terms of chemical durability and mechanical strength.

Structural and component characterization of the B4C neutron conversion layer deposited by magnetron sputtering

  • Jingtao Zhu;Yang Liu;Jianrong Zhou;Zehua Yang;Hangyu Zhu;Xiaojuan Zhou;Jinhao Tan;Mingqi Cui;Zhijia Sun
    • Nuclear Engineering and Technology
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    • 제55권9호
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    • pp.3121-3125
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    • 2023
  • Neutron conversion detectors that use 10B-enriched boron carbide are feasible alternatives to 3He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B4C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the 10B-enriched B4C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.

On the Possibility of Bulk Large Diamond Single Crystal Synthesis with Hydrothermal Process

  • Andrzej M. Szymanski
    • 한국광물학회지
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    • 제10권1호
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    • pp.18-32
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    • 1997
  • Analysis of geological data, relating to occurrence and formation of diamonds as well as host rocks, inclined author to have different outlook on the diamond genesis and to establish a proposition on their formation at pneumatolytic-hydrothermal conditions near superficial Earth zones. Based on that theoretical foundations and experimental works, the first low-pressure and low-temperature hydrothermal diamond synthesis from water solution in pressure autoclave was executed. As a result, the natural diamond seed crystal grew bigger ad coupling of the synthetic diamond single-crystalline grains were obtained. SEM documentation proofs that parallely paragenetic crystallization of quartz and diamond, and nucleation of new octahedral diamond crystals brush take place on the seed crystal surface. Forecast of none times growth of diamond industrial application at 2000 and seventeen times at 2010 with reference to 1995, needs technology of large and pure single-crystals diamond synthesis. Growth of the stable and destressed diamond single-crystals in the pseudo-metastable diamond plot, may be realized with processes going through the long time and with participation of free radicals catalysts admixtures only. Sol-gel colloidal processes are an example of environment which form stable crystals in thermodynamically unstable conditions through a long time. Paper critically discusses a whole way of studies on the diamond synthesis, from high-pressure and high-temperature processes through chemical vapour deposition up to hydrothermal experiments.

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반응 온도에 따른 CoO/Co(OH)2 나노시트의 합성 (Synthesis of CoO/Co(OH)2 Nanosheets Depending on Reaction Temperatures)

  • 이민정;윤가영;류경희
    • 한국재료학회지
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    • 제33권5호
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    • pp.222-228
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    • 2023
  • Transition metal oxides formed by a single or heterogeneous combination of transition metal ions and oxygen ions have various types of crystal structures, which can be classified as layered structures and non-layered structures. With non-layered structures, it is difficult to realize a two-dimensional structure using conventional synthesis methods. In this study, we report the synthesis of cobalt oxide into wafer-scale nanosheets using a surfactant-assisted method. A monolayer of ionized surfactant at the water-air interface acts as a flexible template for direct cobalt oxide crystallization below. The nanosheets synthesized on the water surface can be easily transferred to an arbitrary substrate. In addition, the synthesizing morphological and crystal structures of the nanosheets were analyzed according to the reaction temperatures. The electrochemical properties of the synthesized nanosheets were also measured at each temperature. The nanosheets synthesized at 70 ℃ exhibited higher catalytic properties for the oxygen evolution reaction than those synthesized at other temperatures. This work suggests the possibility of changing material performance by adjusting synthesis temperature when synthesizing 2D nanomaterials using a wide range of functional oxides, resulting in improved physical properties.

Dry Etching of $Al_2O_3$ Thin Film in Inductively Coupled Plasma

  • Xue, Yang;Um, Doo-Seung;Kim, Chang-Il
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.67-67
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    • 2009
  • Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

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Properties of Dy-doped $La_2O_3$ buffer layer for Fe-FETs with Metal/Ferroelectric/Insulator/Si structure

  • Im, Jong-Hyun;Kim, Kwi-Jung;Jeong, Shin-Woo;Jung, Jong-Ill;Han, Hui-Seong;Jeon, Ho-Seung;Park, Byung-Eun
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.140-140
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    • 2009
  • The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

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Characterization of Chemically Stabilized $\beta$-cristobalite Synthesized by Solution-Polymerization Route

  • Lee, Sang-Jin
    • The Korean Journal of Ceramics
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    • 제3권2호
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    • pp.116-123
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    • 1997
  • A chemically stabilized $\beta$-cristobalite, which is stabilized by stuffing cations of $Ca^{2+}$ and $Al^{3+}$, was prepared by a solution-polymerization route employing Pechini resin or PVA solution as a polymeric carrier. The polymeric carrier affected the crystallization temperature, morphology of calicined powder, and particle size distribution. In case of the polyvinyl alcohol (PVA) solution process, a fine $\beta$-cristobalite powder with a narrow particle size distribution (average particle size : 0.3$\mu\textrm{m}$) and a BET specific surface area of 72 $\m^2$/g was prepared by an attrition-milling for 1 h after calcination at 110$0^{\circ}C$ for 1h. Wider particle size distribution and higher specific surface area were observed for the $\beta$-cristobalite powder derived from Pechini resin. The cubie(P1-to-tetraganalb) phase transformation in polynystalline $\beta$-cristobalite was induced at approximately 18$0^{\circ}C$. Like other materials showing transformation toughening, a critical size effect controlled the $\beta$-to-$\alpha$ transformation. Densifed cristobalite sample had some cracks in its internal texture after annealing. The cracks, occurred spontaneoulsy on cooling, were observed in the sample with an average grain sizes of 4.0 $\mu\textrm{m}$ or above. In case of the sintered cristobalite having a composition of CaO.$2Al_2O_3$.40SiO$_2$, small amount of amorphous phase and slow grain growth during annealing were observed. Shear stress-induced transformation was also observed in ground specimen. Cristobalite having a composition of CaO.2Al2O3.80SiO2 showed a more sensitive response to shear stress than the CaO.$2Al_2O_3$.40SiO$_2$ type cristobalite. Shear-induced transformation resulted in an increase of volume about 13% in $\alpha$-cristobalite phase on annealing for above 10 h in the case of the former composition.

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의성 탑리리 오층석탑의 표면오염물 분석 및 손상메커니즘 해석 (Deterioration Mechanism Interpretation and Surface Contaminant Analysis of the Five-Storied Stone Pagoda in Tapriri, Uiseong)

  • 이미혜;전유근;이명성
    • 자원환경지질
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    • 제46권5호
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    • pp.445-453
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    • 2013
  • 의성 탑리리 오층석탑(국보 제77호)은 통일신라시대의 대표적인 석조문화재이다. 현재 이 석탑은 지속적인 풍화로 인해 전체적으로 흑색, 황색, 백색변색이 발생되어 있으며 백색변색이 발생한 부분에서 미세균열, 박리박락, 입상분해가 집중적으로 분포해 있다. 표면오염물에 대한 분석결과, 흑색변색은 망간산화물, 황색변색은 철산화물, 백색변색은 석고와 타라나카이트로 인해 발생한 것으로 확인하였다. 또한, 석탑에 발생한 물리적 훼손은 암석내부에서 석고의 결정화 작용으로 인해 발생한 것으로 판단된다. 따라서 의성 탑리리 오층석탑을 장기적으로 보존하기 위해서는 보존처리 매뉴얼에 따라 석고를 중심으로 표면오염물을 제거하고 P-XRF를 활용한 정기적인 모니터링이 요구된다.