• 한국정보디스플레이학회:학술대회논문집
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• 2001.08a
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• pp.13-21
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• 2001

Increased investment costs for larger substrate factories require breakthrough efficiencies and the capture of price premiums. Otherwise, their profit indicators will fall below those of prior plant investments. Market factors inhibit the continued expansion of monitor size and resolution, so a television market must be developed if substrate size increases will remain profitable, long term.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.7
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• pp.3169-3175
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• 2011

This paper describes the design of size-reduced directional coupler using the artificial dielectric substrate and its increased effective permittivity. Directional couplers are widely used in measuring RF power indirectly and coupling signal power. Artificial dielectric substrates have higher effective dielectric constant than standard dielectric substrate due to the lots of metalized via-holes, and the increased effective permittivity results in size-reduction of circuits. As a design example, 15dB directional couplers are designed on the standard substrate and artificial dielectric substrate and their size are compared. The size of the directional coupler using the artificial dielectric substrate is only 1/3 of that designed using the standard substrate, while the performances are preserved. In addition, the measured performances of the size-reduced coupler are well agreed with the simulated ones. The measured coupling coefficient, matching, and insertion loss at 2GHz are -14.62dB, -24.1dB, and -0.38dB, respectively.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.217-221
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• 2016

In this work, open and short stubs that were fabricated on the silicon substrate and for which the periodically arrayed grounded-strip structure (PAGS) was employed were studied along with their basic RF characteristics for an applicability regarding the RF-matching components. The PAGS-employing open and short stubs showed losses that are much lower than that of the conventional stub on the silicon substrate. Concretely, the Q values of the open and short stubs are 9 and 10.2, respectively, while the Q value of the conventional open stub is 2.5. With the use of the PAGS-employing open and short stubs, a highly miniaturized harmonic-rejection filter was also fabricated on the silicon substrate. The filter exhibited a comparatively sound harmonic-suppression characteristic at n × 13 GHz, and its size is 0.1 mm², which is only 7% of the size of the conventional filter on the silicon substrate.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.110-120
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• 2010

In this paper, we propose a tunable SIW(Substrate Integrated Waveguide) using dielectric screws for eliminating the phase imbalance of large size power distribution networks(PDN). Alumina screws partially inserted into several through holes of the tunable SIW section effectively change the phase shift without S-parameter degradation. ${\pm}33.9^{\circ}$ measured phase imbalance of a large conventional 9 GHz SIW-PDN of $370\;mm{\times}195\;mm$ size has been greatly reduced to ${\pm}4.65^{\circ}$. We expect that the proposed tunable SIW plays an important role for a light-weight, high performance substrate integrated phased array system(Si-PAS) and large size SIW circuit applications.

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.179-182
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• 2010

This paper proposed a novel compact bandpass filter with folded half mode substrate integrated waveguide (FHMSIW) cavities using two-layer printed circuit board(PCB) process. The area of the FHMSIW filter is reduced by nearly 50 % and 75 % compared with half mode substrate integrated waveguide(HMSIW) filter and substrate integrated waveguide(SIW) filter, respectively. A four-pole Chebyshev FHMSIW bandpass filter at C-band has been designed, simulated and fabricated. Measured results are presented and found to agree with the full-wave simulated results by using Ansoft HFSS. The filter shows good performance and compact size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.146-147
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• 2011

Processing a large area substrate for liquid crystal display (LCD) or solar panel applications in a capacitively coupled plasma (CCP) reactor is becoming increasingly challenging because of the size of the substrate size is no longer negligible compared to the wavelength of the applied radio frequency (RF) power. The situation is even worse when the driving frequency is increased to the Very High Frequency (VHF) range. When the substrate size is still smaller than 1/8 of the wavelength, one can obtain reasonably uniform process results by utilizing with methods such as tailoring the precursor gas distribution by adjustingthrough shower head hole distribution or hole size modification, locally adjusting the distance between the substrate and the electrode, and shaping shower head holes to modulate the hollow cathode effect modifying theand plasma density distribution by shaping shower head holes to adjust the follow cathode effect. At higher frequencies, such as 40 MHz for Gen 8.5 (2.2 m${\times}$2.6 m substrate), these methods are not effective, because the substrate is large enough that first node of the standing wave appears within the substrate. In such a case, the plasma discharge cannot be sustained at the node and results in an extremely non-uniform process. At Applied Materials, we have studied several methods of modifying the standing wave pattern to adjusting improve process non-uniformity for a Gen 8.5 size CCP reactor operating in the VHF range. First, we used magnetic materials (ferrite) to modify wave propagation. We placed ferrite blocks along two opposing edges of the powered electrode. This changes the boundary condition for electro-magnetic waves, and as a result, the standing wave pattern is significantly stretched towards the ferrite lined edges. In conjunction with a phase modulation technique, we have seen improvement in process uniformity. Another method involves feeding 40 MHz from four feed points near the four corners of the electrode. The phase between each feed points are dynamically adjusted to modify the resulting interference pattern, which in turn modulate the plasma distribution in time and affect the process uniformity. We achieved process uniformity of <20% with this method. A third method involves using two frequencies. In this case 40 MHz is used in a supplementary manner to improve the performance of 13 MHz process. Even at 13 MHz, the RF electric field falls off around the corners and edges on a Gen 8.5 substrate. Although, the conventional methods mentioned above improve the uniformity, they have limitations, and they cannot compensate especially as the applied power is increased, which causes the wavelength becomes shorter. 40 MHz is used to overcome such limitations. 13 MHz is applied at the center, and 40 MHz at the four corners. By modulating the interference between the signals from the four feed points, we found that 40 MHz power is preferentially channeled towards the edges and corners. We will discuss an innovative method of controlling 40 MHz to achieve this effect.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1044-1051
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• 2003

In this paper, a compact planar microwave duplexer on the high dielectric substrate is presented. As the Ba(Mg$\sub$1/3/Ta$\sub$2/3/)O$_3$(BMT) has good dielectric performances with a high dielectric constant of $\varepsilon$$\sub$r/=23, it is suitable to apply to a printed circuit board fur reducing its circuit size. The BMT substrate is fabricated by using a tape casting fabrication process, and circuit patterns are screen-printed on it by suing silver paste. The open-loop ring type duplexer is designed and implemented on the BMT substrate, and it achieves the smaller size by 80% than one on a commercial substrate($\varepsilon$$\sub$r/=6.15) without degenerating its performance. Therefore the proposed BMT substrate has provided the miniaturization of the duplexer, moreover it can make a contribution towards reducing the size of microwave passive circuits.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.10
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• pp.67-73
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• 2010

In this paper, the effect of a finite substrate on the mutual coupling of a pair of microstrip patch antennas along the H -plane is investigated. The mutual coupling of a pair of microstrip patch antennas can be reduced using the interference effect due to the phase difference by a variety of routes of the surface wave. In the case of the substrate with $\varepsilon_r$=10 and thickness of 3.2 mm, the mutual coupling is reduced by 4.85 dB on the substrate size with the strong mutual coupling, while the mutual coupling is reduced by 34.28 dB on the substrate size with the weak mutual coupling when the distance between the antenna centers is varied from 0.5 $\lambda_0$ to 1.0 $\lambda_0$. In the case of optimization substrate size, the decreasing rate of the mutual coupling with the increase of the distance between the antenna centers is very large. Good agreements between the image method and full wave simulation results are obtained.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.1
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• pp.379-384
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• 2006

Since the monolithic ceramic substrate was introduced for automotive catalytic converters, the durability of the substrate has been a continuing requirement to reduce the emission gas of vehicle. The substrate can occupy a volume as small as 82 $cm^3$ and as large as 8200 $cm^3$ to provide the required substrate for catalytic activity. The long-term durability varies with the size of the substrate from manufacture's point of view. Therefore This study presents that the response surface model using central composite design can explain size effect on the modulus of rupture in a cordierite ceramic monolithic substrate.