• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.2
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• pp.227-236
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• 2017

Quantum-dot cellular automata(QCA) consists of nano-scale cells and demands very low power consumption so that it is one of the alternative technologies that can overcome the limits of scaling CMOS technologies. Various circuits on QCA have been researched until these days, a latch required for counter and state control has been proposed as a component of sequential logic circuits. A latch uses a feedback loop to maintain previous state. In QCA, a latch uses a square structure using 4 clocks for feedback loop. Previous latches have been proposed using many cells and clocks in coplanar. In this paper, in order to eliminate these defects, we propose a SR and D latch using multilayer structure on QCA. Proposed three dimensional loop structure is based on multilayer and consists of 3 layers. Each layer has 2 clock differences between layers in order to reduce interference. The proposed latches are analyzed and compared to previous designs.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.534-537
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• 1998

In this paper, a set of novel self-timed latches are introduced and analyzed. These latches have no back-to-back connection as in conventional self-timed latch, and both inverting and noninerting outputs are evaluated simultaneously leading to thigher oepating frequencies. Power consumption of these latches ar ealso comparable to or less than that of conventional circuits. Novel type of cross-coupled inverter used in the proosed circuits implements static operatin without signal fighting with the main driver during signal transition. Proposed latches ar tested using a 0.6.mu.m triple-poly triple-metal n-well CMOS technology. The resutls indicates that proposed active-low sefl-timed latch (ALSTL) improves speed by 14-34% over conventional NAND SR latch, while in active-high self-timed latch (AHSTL) the improvements are 15-35% with less power as compared with corresponding NORA SR latch. These novel latches have been successfully implemented in a high-speed synchronous DRAM (SDRAM).

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.243-248
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• 2020

In this study, we applied transition-frequency modulation to prevent the flickering of light-emitting diodes (LEDs) in visible light communication (VLC). In the VLC transmitter, rectangular waveforms with transition frequencies of four and two in each bit time were used for the high and low bits, respectively, in the non-return-to-zero data. In the VLC receiver, an RC-high-pass filter (HPF) was used to eliminate the interference of the 120 Hz noise light from the adjacent lighting lamps, and an SR-latch circuit was used to recover the transmitted signal using spikes from the output of the RC-HPF. This configuration is useful for constructing VLC systems that are flicker-free and resistant to adjacent noise light interference.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.395-404
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• 2016

A 6-bit 3.4 GS/s flash ADC in a 65 nm CMOS process is reported along with the proposed 4x time-domain interpolation technique which allows the reduction of the number of comparators from the conventional $2^N-1$ to $2^{N-2}$ in a N-bit flash ADC. The proposed scheme effectively achieves a 4x interpolation factor with simple SR-latches without extra clocking and calibration hardware overhead in the interpolated stage where only offset between the $2^{N-2}$ comparators needs to be calibrated. The offset in SR-latches is within ${\pm}0.5$ LSB in the reported ADC under a wide range of process, voltage supply, and temperature (PVT). The design considerations of the proposed technique are detailed in this paper. The prototype achieves 3.4 GS/s with 5.4-bit ENOB at Nyquist and consumes 12.6 mW power at 1 V supply, yielding a Walden FoM of 89 fJ/conversion-step.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.695-702
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• 2015

A 1-V 1.6-GS/s 5.58-ENOB flash ADC with a high-speed time-domain comparator is proposed. The proposed time-domain comparator, which consumes low power, improves the comparison capability in high-speed operations and results in the removal of preamplifiers from the first-stage of the flash ADC. The time interpolation with two factors, implemented using the proposed time-domain comparator array and SR latch array, reduces the area and power consumption. The proposed flash ADC has been implemented using a 65-nm 1-poly 8-metal CMOS process with a 1-V supply voltage. The measured DNL and INL are 0.28 and 0.41 LSB, respectively. The SNDR is measured to be 35.37 dB at the Nyquist frequency. The FoM and chip area of the flash ADC are 0.38 pJ/c-s and $620{\times}340{\mu}m^2$, respectively.