• 제목/요약/키워드: SOI technology

검색결과 178건 처리시간 0.02초

우리나라 다랑어연승어업에 의한 인도양해역 눈다랑어(Thunnus obesus) 및 황다랑어(Thunnus albacares)의 CPUE 표준화 (Standardization of CPUE for bigeye(Thunnus obesus) and yellowfin(Thunnus albacares) tunas by the Korean longline fishery in the Indian Ocean)

  • 권유정;안두해;이재봉;장창익;문대연
    • 수산해양기술연구
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    • 제44권3호
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    • pp.194-206
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    • 2008
  • This study standardized catch per unit effort(CPUE) of the Korean longline fishery, which has been used to assess the status of stock as an index of abundance, for bigeye and yellowfin tunas in the Indian Ocean. The Generalized Linear Model(GLM) was used to analyze the fishery data, which were catch in number and effort data collected each month from 1971 to 2007 by $5\;{\times}\;5$ degree of latitude and longitude. Explanatory variables for the GLM analysis were year, month, fishing area, number of hooks between floats(HBF), and environment factors. The HBF was divided into three classes while the area was divided into eight subareas. Although sea surface temperature(SST) and southern oscillation index(SOI) were considered as environmental factors, only SST was used to build a model based on statistical significance. Standardized CPUE for yellowfin tuna showed a declining trend, while nominal CPUE for the species showed an increasing trend.

Fabrication and packaging techniques for the application of MEMS strain sensors to wireless crack monitoring in ageing civil infrastructures

  • Ferri, Matteo;Mancarella, Fulvio;Seshia, Ashwin;Ransley, James;Soga, Kenichi;Zalesky, Jan;Roncaglia, Alberto
    • Smart Structures and Systems
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    • 제6권3호
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    • pp.225-238
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    • 2010
  • We report on the development of a new technology for the fabrication of Micro-Electro-Mechanical-System (MEMS) strain sensors to realize a novel type of crackmeter for health monitoring of ageing civil infrastructures. The fabrication of micromachined silicon MEMS sensors based on a Silicon On Insulator (SOI) technology, designed according to a Double Ended Tuning Fork (DETF) geometry is presented, using a novel process which includes a gap narrowing procedure suitable to fabricate sensors with low motional resistance. In order to employ these sensors for crack monitoring, techniques suited for bonding the MEMS sensors on a steel surface ensuring good strain transfer from steel to silicon and a packaging technique for the bonded sensors are proposed, conceived for realizing a low-power crackmeter for ageing infrastructure monitoring. Moreover, the design of a possible crackmeter geometry suited for detection of crack contraction and expansion with a resolution of $10{\mu}m$ and very low power consumption requirements (potentially suitable for wireless operation) is presented. In these sensors, the small crackmeter range for the first field use is related to long-term observation on existing cracks in underground tunnel test sections.

SMPS용 전력소자가 내장된 PWM IC 설계에 관한 연구 (The Study on the design of PWM IC with Power Device for SMPS application)

  • 임동주;구용서
    • 전기전자학회논문지
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    • 제8권1호
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    • pp.152-159
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    • 2004
  • 본 연구에서는 Bi-DMOS 기술을 이용하여 SMPS용 고내압 스윗칭 전력소자 내장형 one-chip PWM IC를 설계하였다. 기준전압회로는 다양한 온도와 공급전압의 변화에도 일정한 전압(5V)을 발생시킬 수 있도록 설계하였고, 오차 증폭기의 경우, 높은 dc gain$({\simeq}65.7db)$, unity frequency$({\simeq}189Khz)$, 적절한 $PM({\simeq}76)$를 가지면서 높은 입력저항을 갖도록 설계하였다. 비교기는 2단 구성으로 설계를 하였고, 삼각파 발생회로 경우, 외부 저항과 캐패시터를 이용해서 발진 주파수(20K), output swing 폭(3.5V)을 갖는 삼각파를 발생시켰다. 스윗칭 파워소자는 SOI 기판을 사용하고, 확장 드레인 영역의 길이와 도핑 농도를 적절히 조정, 350V급 내압을 갖는 n-LDMOSFET을 설계 하였다. 최종적으로, layout은 각 소자에 대한 디자인 룰(2um 설계 룰)을 설정하였고, Bi-DMOS 공정 기술을 바탕으로 PWM IC 회로와 n-LDMOSFET one-chip IC를 설계하였다.

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Extended SBM 공정을 이용하여 단일 실리콘 기판상에 제작된 새로운 z 축 가속도계 (A Novel z-axis Accelerometer Fabricated on a Single Silicon Substrate Using the Extended SBM Process)

  • 고형호;김종팔;박상준;곽동훈;송태용;조동일;허건수;박장현
    • 센서학회지
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    • 제13권2호
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    • pp.101-109
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    • 2004
  • This paper presents a novel z-axis accelerometer with perfectly aligned vertical combs fabricated using the extended sacrificial bulk micromachining (extended SBM) process. The z-axis accelerometer is fabricated using only one (111) SOI wafer and two photo masks without wafer bonding or CMP processes as used by other research efforts that involve vertical combs. In our process, there is no misalignment in lateral gap between the upper and lower comb electrodes, because all critical dimensions including lateral gaps are defined using only one mask. The fabricated accelerometer has the structure thickness of $30{\mu}m$, the vertical offset of $12{\mu}m$, and lateral gap between electrodes of $4{\mu}m$. Torsional springs and asymmetric proof mass produce a vertical displacement when an external z-axis acceleration is applied, and capacitance change due to the vertical displacement of the comb is detected by charge-to-voltage converter. The signal-to-noise ratio of the modulated and demodulated output signal is 80 dB and 76.5 dB, respectively. The noise equivalent input acceleration resolution of the modulated and demodulated output signal is calculated to be $500{\mu}g$ and $748{\mu}g$. The scale factor and linearity of the accelerometer are measured to be 1.1 mV/g and 1.18% FSO, respectively.

도심 하수관거에서 발생하는 주요 지정악취물질들의 배출특성 (Characteristics of major offensive odorants emitted from urban stormwater catch basins)

  • 홍원필;;;김기현
    • 분석과학
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    • 제23권4호
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    • pp.347-356
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    • 2010
  • 도심 지역의 하수관거에서 발생하는 주요 악취성분들의 발생특성 및 배출경향을 평가하였다. 하수관거에서 발생하는 총 6 가지의 지정 악취물질들($H_2S$, $CH_3SH$, DMS, DMDS, $CH_3CHO$, $NH_3$)을 주 대상으로 선정하여 조사를 실시하였다. 건조한 조건과 습한 조건을 유지하는 2개의 비교대상 하수관거에서 악취시료를 채취하였다. 측정한 악취물질들을 농도기준의 절대값과 이를 경험식에 주입하여 산출한악취지수(OI, SOI)를 동시에 활용하는 방식으로 비교분석을 하였다. 실험 결과, 전체 분석 성분 중 $CH_3SH$, $H_2S$, DMS 등의 환원황화합물(reduced sulfur compounds: RSC) 성분들이 악취세기에 큰 영향을 미치는 것으로 나타났다. 또 연구결과들을 전체적으로 종합해 보면, 주요 악취성분들의 일간 발생경향은 식생활 및 배수 등의 인간활동과 어느 정도 연관성을 띄고 있음을 알 수 있었다.

Piezo-electrically Actuated Micro Corner Cube Retroreflector (CCR) for Free-space Optical Communication Applications

  • Lee, Duk-Hyun;Park, Jae-Y.
    • Journal of Electrical Engineering and Technology
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    • 제5권2호
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    • pp.337-341
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    • 2010
  • In this paper, an extremely low voltage operated micro corner cube retroreflector (CCR) was fabricated for free-space optical communication applications by using bulk silicon micromachining technologies. The CCR was comprised of an orthogonal vertical mirror and a horizontal actuated mirror. For low voltage operation, the horizontal actuated mirror was designed with two PZT cantilever actuators, torsional bars, hinges, and a mirror plate with a size of $400{\mu}m{\times}400{\mu}m$. In particular, the torsional bars and hinges were carefully simulated and designed to secure the flatness of the mirror plate by using a finite element method (FEM) simulator. The measured tilting angle was approximately $2^{\circ}$ at the applied voltage of 5 V. An orthogonal vertical mirror with an extremely smooth surface texture was fabricated using KOH wet etching and a double-SOI (silicon-on-insulator) wafer with a (110) silicon wafer. The fabricated orthogonal vertical mirror was comprised of four pairs of two mutually orthogonal flat mirrors with $400{\mu}m4 (length) $\times400{\mu}m$ (height) $\times30{\mu}m$ (thickness). The cross angles and surface roughness of the orthogonal vertical mirror were orthogonal, almost $90^{\circ}$ and 3.523 nm rms, respectively. The proposed CCR was completed by combining the orthogonal vertical and horizontal actuated mirrors. Data transmission and modulation at a frequency of 10 Hz was successfully demonstrated using the fabricated CCR at a distance of approximately 50 cm.

Simulation Study on a Quasi Fermi Energy Movement in the Floating Body Region of FITET (Field-induced Inter-band Tunneling Effect Transistor)

  • Song, Seung-Hwan;Kim, Kyung-Rok;Kang, Sang-Woo;Kim, Jin-Ho;Kang, Kwon-Chil;Shin, Hyung-Cheol;Lee, Jong-Duk;Park, Byung-Gook
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.679-682
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    • 2005
  • Negative-differential conductance (NDC) characteristics as well as negative-differential trans-conductance (NDT) characteristics have been observed in the room temperature I-V characteristics of Field-induced Inter-band Tunneling Effect Transistors (FITETs). These characteristics have been explained with inter-band tunneling physics, from which, inter-band tunneling current flows when the energy bands of degenerately doped regions align, and it does not flow when they don't. FITET is an SOI device and the body region is not directly connected to the external terminal. Therefore, Fermi energy in the body region is determined by electrical coupling among four regions - gate, source, drain and substrate. So, a quasi Fermi energy of the majority carriers in the floating body region can be changed by external voltages, and this causes the energy band movements in the body region, which determine whether the energy bands between degenerately doped junctions aligns or not. This is a key point for an explanation of NDT and NDC characteristics. In this paper, a quasi Fermi energy movement in the floating body region of FITET was investigated by a device simulation. This result was applied for the description of relation between quasi Fermi energy in the body region and external gate bias voltage.

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ENSO와 한국의 수문변량들간의 계절적 관계 분석 (Seasonal Relationship between El Nino-Southern Oscillation and Hydrologic Variables in Korea)

  • 추현재;김태웅;이정규;이재홍
    • 한국수자원학회논문집
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    • 제40권4호
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    • pp.299-311
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    • 2007
  • 최근 들어 세계의 연중 기후 변화에 주된 요인으로써 엘니뇨와 같은 현상이 매우 잦아졌다. 많은 기상수문학자들이 강수와 유량에 대한 엘니뇨 남방진동의 영향에 대해 연구하고 있지만, 수문변량들은 큰 지역적 변동을 갖고 있기 때문에 결정적인 인과관계를 찾아내는데 있어서 많은 어려움이 있다. 본 연구에서는 엘니뇨-남방진동과 한국에서의 수문변량들 간의 계절석 관계를 고찰하였다. 엘니뇨-난방진동을 정량적으로 표현해 주는 지수로써 남방진동지수를 사용하였고, 월강수량 자료, 월평균기온 자료 그리고 댐의 월유입량 자료를 표준정규분포를 가지는 표준정규지수로 변환하여 사용하였다. 계절적 관계를 파악하기 위해 난방진동지수와 수문변량의 월 자료는 봄 (3월-5월), 여름(6윌-8월), 가을(9월-11월) 그리고 겨울 (12윌-2월)로 분류되었다. ENSO episode에 대한 수문변량들의 조건부 초과확률과 분포형태를 바탕으로 분석을 수행한 결과 전반적으로 Warm ENSO episode의 경우 강수량 증가와 기온 상승과 관련이 있고, Cold ENSO episode의 경우 강수량 감소와 기온 하강과 관계가 있다. 그러나 일부 지역에서는 이러한 전반적인 결과와 상이한 결과가 나타나기도 하였다.