• 제목/요약/키워드: SK mode

검색결과 39건 처리시간 0.026초

4비트 ADC 반복구조를 이용한 저전력 전류모드 12비트 ADC (A Low Power Current-Mode 12-bit ADC using 4-bit ADC in cascade structure)

  • 박소연;김형민;이대니얼주헌;김성권
    • 한국전자통신학회논문지
    • /
    • 제14권6호
    • /
    • pp.1145-1152
    • /
    • 2019
  • 본 논문에서는 디지털 회로와 저소비전력 및 고속연산의 장점을 가진 아날로그 회로를 혼용하기 위하여, 저전력 전류모드 12비트 ADC(: Analog to Digital Converter)를 제안하였다. 제안하는 12비트 ADC는 4비트 ADC의 cascade 구조를 사용하여 소비전력을 줄일 수 있었으며, 변환 current mirror 회로를 사용해 칩면적을 줄일 수 있었다. 제안된 ADC는 매그나칩/SK하이닉스 350nm 공정으로 구현하였고, Cadence MMSIM을 사용하여 post-layout simulation를 진행하였다. 전원전압 3.3V에서 동작하고, 면적은 318㎛ x 514㎛를 차지하였다. 또한 제안하는 ADC는 평균 소비전력 3.4mW의 저소비전력으로 동작하는 가능성을 나타내었다.

차동 노이즈 분석을 위한 단상 인버터 고주파 회로 모델링 및 검증 (Single Phase Inverter High Frequency Circuit Modeling and Verification for Differential Mode Noise Analysis)

  • 신주현;생차야;김우중;차한주
    • 전력전자학회논문지
    • /
    • 제26권3호
    • /
    • pp.176-182
    • /
    • 2021
  • This research proposes a high-frequency circuit that can accurately predict the differential mode noise of single-phase inverters at the circuit design stage. Proposed single-phase inverter high frequency circuit in the work is a form in which harmonic impedance components are added to the basic single-phase inverter circuit configuration. For accurate noise prediction, parasitic components present in each part of the differential noise path were extracted. Impedance was extracted using a network analyzer and Q3D in the measurement range of 150 kHz to 30 MHz. A high-frequency circuit model was completed by applying the measured values. Simulations and experiments were conducted to confirm the validity of the high-frequency circuit. As a result, we were able to predict the resonance point of the differential mode voltage extracted as an experimental value with a high-frequency circuit model within an approximately 10% error. Through this outcome, we could verify that differential mode noise can be accurately predicted using the proposed model of the high-frequency circuit without a separate test bench for noise measurement.

Polyethylene flow prediction with a differential multi-mode Pom-Pom model

  • Rutgers, R.P.G.;Clemeur, N.;Debbaut, B.
    • Korea-Australia Rheology Journal
    • /
    • 제14권1호
    • /
    • pp.25-32
    • /
    • 2002
  • We report the first steps of a collaborative project between the University of Queensland, Polyflow, Michelin, SK Chemicals, and RMIT University, on simulation, validation and application of a recently introduced constitutive model designed to describe branched polymers. Whereas much progress has been made on predicting the complex flow behaviour of many - in particular linear - polymers, it sometimes appears difficult to predict simultaneously shear thinning and extensional strain hardening behaviour using traditional constitutive models. Recently a new viscoelastic model based on molecular topology, was proposed by McLeish and carson (1998). We explore the predictive power of a differential multi-mode version of the porn-pom model for the flow behaviour of two commercial polymer melts: a (long-chain branched) low-density polyethylene (LDPE) and a (linear) high-density polyethylene (HDPE). The model responses are compared to elongational recovery experiments published by Langouche and Debbaut (19c99), and start-up of simple shear flow, stress relaxation after simple and reverse step strain experiments carried out in our laboratory.

이중모드로 동작하는 개선된 Sign-Godard 자력 등화기 (Modified Sign-Godard Blind Equalizer Operating on Dual Mode)

  • 조현돈;장태정
    • 한국통신학회논문지
    • /
    • 제29권9C호
    • /
    • pp.1235-1243
    • /
    • 2004
  • 본 논문에서는 이중 모드로 동작하면서 기존의 Sign-Godard 알고리듬과 반경지향 알고리듬의 장점을 결합하는 새로운 자력 등화 알고리듬을 제안한다. 제안한 알고리듬은 Sign-Godard 알고리듬의 좋은 초기 수렴성과 반경지향 알고리듬의 수렴 후 작은 잔류오차 특성을 동시에 가진다. 국부 수렴 현상과 위상차는 고차 통계치를 이용하여 보정하였다. 시뮬레이션 결과 제안한 알고리듬은 기존의 알고리듬보다 빠른 수렴 속도와 더불어 수렴 후에 남아 있는 잔류 오차가 작은 좋은 특징을 보여 준다.

DC-DC 벅 컨버터의 차동모드 노이즈 분석을 위한 고주파 등가회로 모델 (High-Frequency Equivalent Circuit Model for Differential Mode Noise Analysis of DC-DC Buck Converter)

  • 신주현;김우중;차한주
    • KEPCO Journal on Electric Power and Energy
    • /
    • 제6권4호
    • /
    • pp.473-480
    • /
    • 2020
  • In this paper, we proposed a high frequency equivalent circuit considering parasitic impedance components for differential noise analysis on the input stage during DC-DC buck converter switching operation. Based on the proposed equivalent circuit model, we presented a method to measure parasitic impedance parameters included in DC bus plate, IGBT, and PCB track using the gain phase method of a network analyzer. In order to verify the validity of this model, a DC-DC prototype consisting of a buck converter, a signal analyzer, and a LISN device, and then resonance frequency was measured in the frequency range between 150 kHz and 30 MHz. The validity of the parasitic impedance measurement method and the proposed equivalent model is verified by deriving that the measured resonance frequency and the resonance frequency of the proposed high frequency equivalent model are the same.

Support MOS Capacitor를 이용한 Current Transfer 구조의 전류 메모리 회로 (Current Transfer Structure based Current Memory using Support MOS Capacitor)

  • 김형민;박소연;이대니얼주헌;김성권
    • 한국전자통신학회논문지
    • /
    • 제15권3호
    • /
    • pp.487-494
    • /
    • 2020
  • 본 논문에서는 정적소비전력을 줄이며, 전류 모드 신호처리의 장점을 최대로 올릴 수 있는 전류 메모리 회로 설계를 제안한다. 제안하는 전류 메모리 회로는 기존의 전류 메모리 회로가 갖는 Clock-Feedthrough와 Charge-Injection 등으로 인해 데이터 저장 시간이 길어지면서 전류 전달 오차가 심해지는 문제를 최소화하며, 저전력 동작이 가능한 Current Transfer 구조에 밀러 효과(Miller effect)를 극대화하는 Support MOS Capacitor를 삽입하는 설계로, 저장 시간에 따르는 개선된 전류 전달 오차를 보였다. 매그나칩/SK하이닉스 0.35㎛ 공정으로 칩 제작을 통한 실험 결과, 저장 시간에 따르는 전류 전달 오차가 5% 이하로 개선되는 것을 검증하였다.

InAs 양자점 형성 방법이 양자점 적외선 소자 특성에 미치는 효과 (Effect of Growth Methods of InAs Quntum Dots on Infrared Photodetector Properties)

  • 서동범;황제환;오보람;노삼규;김준오;이상준;김의태
    • 한국재료학회지
    • /
    • 제28권11호
    • /
    • pp.659-662
    • /
    • 2018
  • We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by $4{\times}[0.3ML/1nm\;In_{0.15}Ga_{0.85}As]$ deposition(SML QDs). The QD infrared photodetector(QDIP) structure of $n^+-n^-(QDs)-n^+$ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown with Si doping of $2{\times}10^{17}/cm^3$ and capped by an $In_{0.15}Ga_{0.85}As$ layer at $495^{\circ}C$. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(${\sim}9-14{\mu}m$) of the SML QDIP is longer than that (${\sim}6-12{\mu}m$) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted $Al_{0.08}Ga_{0.92}As$ layer.

Expression of $Ca^{2+}$-activated $K^+$ Channels and Their Role in Proliferation of Rat Cardiac Fibroblasts

  • Choi, Se-Yong;Lee, Woo-Seok;Yun, Ji-Hyun;Seo, Jeong-Seok;Lim, In-Ja
    • The Korean Journal of Physiology and Pharmacology
    • /
    • 제12권2호
    • /
    • pp.51-58
    • /
    • 2008
  • Cardiac fibroblasts constitute one of the largest cell populations in the heart, and contribute to structural, biochemical, mechanical and electrical properties of the myocardium. Nonetheless, their cardiac functions, especially electrophysiological properties, have often been disregarded in studies. $Ca^{2+}$-activated $K^+\;(K_{Ca})$ channels can control $Ca^{2+}$ influx as well as a number of $Ca^{2+}$-dependent physiological processes. We, therefore, attempted to identify and characterize $K_{Ca}$ channels in rat Cardiac fibroblasts. First, we showed that the cells cultured from the rat ventricle were cardiac fibroblasts by immunostaining for discoidin domain receptor 2 (DDR-2), a specific fibroblast marker. Secondly, we detected the expression of various $K_{Ca}$ channels by reverse transcription polymerase chain reaction (RT-PCR), and found all three family members of $K_{Ca}$ channels, including large conductance $K_{Ca}$ (BK-${\alpha}1-\;and\;-{\beta}1{\sim}4$subunits), intermediate conductance $K_{Ca}$ (IK), and small conductance $K_{Ca}$ (SK$1{\sim}4$ subunits) channels. Thirdly, we recorded BK, IK, and SK channels by whole cell mode patch clamp technique using their specific blockers. Finally, we performed cell proliferation assay to evaluate the effects of the channels on cell proliferation, and found that the inhibition of IK channel increased the cell proliferation. These results showed the existence of BK, IK, and SK channels in rat ventricular fibroblasts and involvement of IK channel in cell proliferation.

이온선보조증착에 의한 Si(100)기판에 정합성장된 $Si_{0.5}Ge_{0.5}$박막의 성장방식 (Growth mode of epitaxial $Si_{0.5}Ge_{0.5}$ alloy layer grown on Si(100) by ion beam assisted deposition)

  • 박상욱;백홍구
    • 한국재료학회지
    • /
    • 제5권3호
    • /
    • pp.297-309
    • /
    • 1995
  • 본 연구에서는 이온선보조증착법에 의해 Si(100)기판위에 정합성장된 $Si_{0.5}$Ge_{0.5}$층의 핵성성과 성장을 고찰하였다. 성장층에 대한 AFM(Atomic Force Microscopy), RHEED(Reflection High Energy Electron diffraction) 등의 분석결과 Si(100)기판위에 이온선보조증착에 의하여 성장된 $Si_{0.5}$Ge_{0.5}$층은 Stranski-Kranstanov(SK)기구로 성장되며, 300eV, 10 $\mu$A/$cm^{2}$의 Ar이온선을 조사시키는 경우 결정성이 향상되었고, SK 성장 방식의 임계두께가 증가하였다. Ar 이온선 조사에 의해 MBE에 의한 정합성장온도(55$0^{\circ}C$-$600^{\circ}C$)보다 훨씬 낮은 20$0^{\circ}C$에서 정합성장이 가능하였으며, $x_{mn}$값은 10.5%로 MBE에 의한 정합성장시 보고된 $x_{mn}$ 값보다 낮았다. 이온충돌에 의해 발생한 3차원 island의 분해와 표면확산의 증가가 $Si_{0.5}$Ge_{0.5}$층의 성장에 현저한 영향을 미쳤으며, 이온충돌의 영향은 3차원 island의 생성보다 3차원 island의 분해가 더 안정한 낮은 증착온도에서만 관찰되었다.

  • PDF

CATV용 집중정수형 방향성결합기의 우기모드 해석법 (An Analysis Method of Lumped-element Directional Coupler for CATV by Even- and Odd-Mode Theory)

  • 하도훈;김동일
    • 한국항해학회지
    • /
    • 제25권2호
    • /
    • pp.131-136
    • /
    • 2001
  • CATV(Cable Television) 시스템용 집중정수형 방향성 결합기의 새로운 해석법을 제안하였다. 본 논문에서는 결합선로형 방향성결합기에 대한 우·기 모드 해석법을 변성기형 방향성 결합기에 적용하였다. 측정된 우·기 모드 반사계수만을 사용하여 구한 S-파라미터의 결과와 계산치를 비교함으로서 제안된 해석법의 타당성을 입증하고, 제안된 해석법을 적용하여 설계·제작한 신호분기기는 5 MHz ∼ 4,000 MHz까지 광대역화 됨을 보였다.

  • PDF