• The Journal of the Korea institute of electronic communication sciences
• /
• v.14 no.6
• /
• pp.1145-1152
• /
• 2019

In this paper, a low power current mode 12-bit ADC(: Analog to Digital Converter) is proposed to mix digital circuits and analog circuits with the advantages of low power consumption and high speed operation. The proposed 12 bit ADC is implemented by using 4-bit ADC in a cascade structure, so its power consumption can be reduced, and the chip area can be reduced by using a conversion current mirror circuit. The proposed 12-bit ADC is SK Hynix 350nm process, and post-layout simulation is performed using Cadence MMSIM. It operates at a supply voltage of 3.3V and the area of the proposed circuit is 318㎛ x 514㎛. In addition, the ADC shows the possibility of operating with low power consumption of 3.4mW average power consumption in this paper.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.26 no.3
• /
• pp.176-182
• /
• 2021

This research proposes a high-frequency circuit that can accurately predict the differential mode noise of single-phase inverters at the circuit design stage. Proposed single-phase inverter high frequency circuit in the work is a form in which harmonic impedance components are added to the basic single-phase inverter circuit configuration. For accurate noise prediction, parasitic components present in each part of the differential noise path were extracted. Impedance was extracted using a network analyzer and Q3D in the measurement range of 150 kHz to 30 MHz. A high-frequency circuit model was completed by applying the measured values. Simulations and experiments were conducted to confirm the validity of the high-frequency circuit. As a result, we were able to predict the resonance point of the differential mode voltage extracted as an experimental value with a high-frequency circuit model within an approximately 10% error. Through this outcome, we could verify that differential mode noise can be accurately predicted using the proposed model of the high-frequency circuit without a separate test bench for noise measurement.

• Korea-Australia Rheology Journal
• /
• v.14 no.1
• /
• pp.25-32
• /
• 2002

We report the first steps of a collaborative project between the University of Queensland, Polyflow, Michelin, SK Chemicals, and RMIT University, on simulation, validation and application of a recently introduced constitutive model designed to describe branched polymers. Whereas much progress has been made on predicting the complex flow behaviour of many - in particular linear - polymers, it sometimes appears difficult to predict simultaneously shear thinning and extensional strain hardening behaviour using traditional constitutive models. Recently a new viscoelastic model based on molecular topology, was proposed by McLeish and carson (1998). We explore the predictive power of a differential multi-mode version of the porn-pom model for the flow behaviour of two commercial polymer melts: a (long-chain branched) low-density polyethylene (LDPE) and a (linear) high-density polyethylene (HDPE). The model responses are compared to elongational recovery experiments published by Langouche and Debbaut (19c99), and start-up of simple shear flow, stress relaxation after simple and reverse step strain experiments carried out in our laboratory.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.29 no.9C
• /
• pp.1235-1243
• /
• 2004

In this paper, a new blind equalizer algorithm is proposed which operates on dual mode and combines the benefits of both the Sign-Godard algorithm and the radius-directed algorithm The proposed algorithm has both the properties of good initial convergence of the Sign-Godard algorithm and low residual errors after convergence of the radius-directed algorith High order statistics are used for blind phase recovery and gor avoiding local minima. Simulation results show that the new algorithm has not only faster convergence rated but also lower residual errors than those of the conventional algorithms.

• KEPCO Journal on Electric Power and Energy
• /
• v.6 no.4
• /
• pp.473-480
• /
• 2020

In this paper, we proposed a high frequency equivalent circuit considering parasitic impedance components for differential noise analysis on the input stage during DC-DC buck converter switching operation. Based on the proposed equivalent circuit model, we presented a method to measure parasitic impedance parameters included in DC bus plate, IGBT, and PCB track using the gain phase method of a network analyzer. In order to verify the validity of this model, a DC-DC prototype consisting of a buck converter, a signal analyzer, and a LISN device, and then resonance frequency was measured in the frequency range between 150 kHz and 30 MHz. The validity of the parasitic impedance measurement method and the proposed equivalent model is verified by deriving that the measured resonance frequency and the resonance frequency of the proposed high frequency equivalent model are the same.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.15 no.3
• /
• pp.487-494
• /
• 2020

In this paper, we propose a current memory circuit design that reduces static power consumption and maximizes the advantages of current mode signal processing. The proposed current memory circuit minimizes the problem in which the current transfer error increases as the data transfer time increases due to clock-feedthrough and charge-injection of the existing current memory circuit. The proposed circuit is designed to insert a support MOS capacitor that maximizes the Miller effect in the current transfer structure capable of low-power operation. As a result, it shows the improved current transfer error according to the memory time. From the experimental results of the chip, manufactured with MagnaChip / SK Hynix 0.35 process, it was verified that the current transfer error, according to the memory time, reduced to 5% or less.

• Korean Journal of Materials Research
• /
• v.28 no.11
• /
• pp.659-662
• /
• 2018

We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by $4{\times}[0.3ML/1nm\;In_{0.15}Ga_{0.85}As]$ deposition(SML QDs). The QD infrared photodetector(QDIP) structure of $n^+-n^-(QDs)-n^+$ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown with Si doping of $2{\times}10^{17}/cm^3$ and capped by an $In_{0.15}Ga_{0.85}As$ layer at $495^{\circ}C$. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(${\sim}9-14{\mu}m$) of the SML QDIP is longer than that (${\sim}6-12{\mu}m$) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted $Al_{0.08}Ga_{0.92}As$ layer.

• The Korean Journal of Physiology and Pharmacology
• /
• v.12 no.2
• /
• pp.51-58
• /
• 2008

Cardiac fibroblasts constitute one of the largest cell populations in the heart, and contribute to structural, biochemical, mechanical and electrical properties of the myocardium. Nonetheless, their cardiac functions, especially electrophysiological properties, have often been disregarded in studies. $Ca^{2+}$-activated $K^+\;(K_{Ca})$ channels can control $Ca^{2+}$ influx as well as a number of $Ca^{2+}$-dependent physiological processes. We, therefore, attempted to identify and characterize $K_{Ca}$ channels in rat Cardiac fibroblasts. First, we showed that the cells cultured from the rat ventricle were cardiac fibroblasts by immunostaining for discoidin domain receptor 2 (DDR-2), a specific fibroblast marker. Secondly, we detected the expression of various $K_{Ca}$ channels by reverse transcription polymerase chain reaction (RT-PCR), and found all three family members of $K_{Ca}$ channels, including large conductance $K_{Ca}$ (BK-${\alpha}1-\;and\;-{\beta}1{\sim}4$subunits), intermediate conductance $K_{Ca}$ (IK), and small conductance $K_{Ca}$ (SK$1{\sim}4$ subunits) channels. Thirdly, we recorded BK, IK, and SK channels by whole cell mode patch clamp technique using their specific blockers. Finally, we performed cell proliferation assay to evaluate the effects of the channels on cell proliferation, and found that the inhibition of IK channel increased the cell proliferation. These results showed the existence of BK, IK, and SK channels in rat ventricular fibroblasts and involvement of IK channel in cell proliferation.

• Korean Journal of Materials Research
• /
• v.5 no.3
• /
• pp.297-309
• /
• 1995

본 연구에서는 이온선보조증착법에 의해 Si(100)기판위에 정합성장된 $Si_{0.5}$Ge_{0.5}$층의 핵성성과 성장을 고찰하였다. 성장층에 대한 AFM(Atomic Force Microscopy), RHEED(Reflection High Energy Electron diffraction) 등의 분석결과 Si(100)기판위에 이온선보조증착에 의하여 성장된 $Si_{0.5}$Ge_{0.5}$층은 Stranski-Kranstanov(SK)기구로 성장되며, 300eV, 10 $\mu$A/$cm^{2}$의 Ar이온선을 조사시키는 경우 결정성이 향상되었고, SK 성장 방식의 임계두께가 증가하였다. Ar 이온선 조사에 의해 MBE에 의한 정합성장온도(55$0^{\circ}C$-$600^{\circ}C$)보다 훨씬 낮은 20$0^{\circ}C$에서 정합성장이 가능하였으며, $x_{mn}$값은 10.5%로 MBE에 의한 정합성장시 보고된 $x_{mn}$ 값보다 낮았다. 이온충돌에 의해 발생한 3차원 island의 분해와 표면확산의 증가가 $Si_{0.5}$Ge_{0.5}$층의 성장에 현저한 영향을 미쳤으며, 이온충돌의 영향은 3차원 island의 생성보다 3차원 island의 분해가 더 안정한 낮은 증착온도에서만 관찰되었다.

• Journal of the Korean Institute of Navigation
• /
• v.25 no.2
• /
• pp.131-136
• /
• 2001

A new analysis method of lumped-element directional coupler for CATV was proposed, where the even-and odd-mode theory for a symmetrical coupled-line directional coupler was applied to a transformer-type directional coupler. In addition, the tap-offs were analyzed by the proposed theory, which are widely used in CATV (Cable Television) systems. By comparing the calculated results for S-parameters results to the measured ones using only the even-and odd-mode reflection coefficients, the validity of the proposed analysis method was confirmed. Then, it was clearly shown that the tap-off has very wide bandwidth from 5 MHz to 4,000 MHz by adopting the proposed theory.