• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.630-634
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• 2004

This paper describes the design of a two stage 1V power supply SiGe Low Noise Amplifier operating at 5.25 GHa for 802.lla wireless LAN application. The achieved performance includes a gain of 17 ㏈, noise figure of 2.7㏈, reflection coefficient of 15 ㏈, IIP3 of -5 ㏈m, and 1-㏈ compression point of -14㏈m. The total power consumption of the circuit was 7 mW including 0.5mW for the bias circuit.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.1
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• pp.23-30
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• 2014

The wear characteristics of $SiC_f$/SiC composites were evaluated according to the alignment direction of the fibers, and the elastic wave-generated friction was detected and analyzed in wearing. The friction coefficient and wear loss were similar in the longitudinal and the transverse direction of the fibers. However, these values were lower in the vertical direction of the fibers because of the brittle nature of the fiber. The friction coefficient and the wear loss were directly proportional to each other. The dominant frequencies were 58.6 kHz for monolithic SiC and 117.2 and 136.7 kHz for $SiC_f$/SiC composites, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• Archives of Metallurgy and Materials
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• v.66 no.4
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• pp.959-962
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• 2021

In this study, precipitation of Ca in Al-Mg alloys containing a trace of Ca during homogenization was investigated using a transmission electron microscope (TEM) and calculated phase diagrams. TEM result indicated that the Ca-based particles found in the examined sample are Ca₇Mg_7.5Si₁₄. From the calculation of Scheil-Gulliver cooling, it was found that the Ca was formed as Al₄Ca and C36 laves phases with Mg₂Si and Al₁₃Fe₄ from other impurities phase during solidification. No Ca-Mg-Si ternary phase existed at the homogenization temperature in the calculated phase diagram. From the phase diagram of Al-Al₄Ca-Mg₂Si three-phase isothermal at 490℃, it was shown that Ca₇Mg₆Si₁₄ phase co-exists with Al, Mg₂Si and Al₄Ca in the largest region and with only Al and Mg₂Si in Al₄Ca-poor regions. It was thought that the Ca₇Mg₆Si₁₄ ternary phase was formed by the interaction between Mg₂Si and Al₄Ca considering that the segregation can occur throughout the entire microstructures.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.1
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• pp.1-7
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• 2001

A method to simultaneously synthesize and consolidate the silicide $NiSi_2$ and the composite $NiSi_2$-20vol.%Nb from powders of Ni, Si, and Nb was investigated. Combustion synthesis was carried out under the combined effect of an electric field and mechanical pressure. The final density of the products increased nearly linearly with the applied pressure. Highly dense $NiSi_2$ and $NiSi_2$-20vol.%Nb with relative densities of up to 97% were produced under the simultaneous application of a 60MPa pressure and a 3000A current on the reactant powders. The respective Vickers microhardness values for these materials were 6.0 and 5.8 GPa. From indentation crack measurements, the fracture toughness values for $NiSi_2$ and $NiSi_2$-20vol.%Nb were calculated to be 3.3 and 4.7 $MPa{\cdot}m^{1/2}$, respectively.

• Resources Recycling
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• v.7 no.5
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• pp.52-57
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• 1998

Effect of Si in the electrochemical corrosion characteristics of Mg-Li-Al light alloy has been investigated by means of potentiodynamic polarization study. The elecrochemical behaviors were evaluated in 003% NaCl solution and the solution buffered with KH$_{2}PO_{5}{\cdot}$NaOH at room temperature. It was found that the addition of very small quantity of Si (0.48 wt%) in Mg-Li-Al light alloy increased corrosion rates and amount of corrosion products and decreated the pitting resistance of the alloy. From the results it was concluded that Si which is added to increase the strength of Mg-Li-Al alloy is harmful to corrosion properties of the alloy.

• Journal of Korea Foundry Society
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• v.27 no.3
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• pp.120-125
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• 2007

The microstructure, mechanical properties and melting range of Ni-Cr-Mo based alloys were investigated to develop Be-free Ni-Cr-Mo base dental alloys for Porcelain-Fused-to-Metal Firing(PFM). All as-cast alloys showed dendritic structure. Rockwell hardness of 20Cr7Mo was increased with addition of Si and Ti. On the contrary, it was decreased with addition of Co. The duplex alloying elemental addition such as 3Co + xTi, 2Si + xCo and 2Si + xTi to 20Cr7Mo resulted in much increase of hardness. Rockwell hardness and compressive strength for 20Cr3CoSiTi or 17Cr6CoSiTi alloy that add Si-Ti had similar values compared to the commercial alloys. Melting range for 20Cr3CoSiTi and 17Cr6CoSiTi alloy that add Si-Ti showed similar or lower than commercial alloys. In conclusion, 20Cr3CoSiTi and 17Cr6CoSiTi alloys can be applied for commercial use.

• Korean Journal of Materials Research
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• v.29 no.1
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• pp.7-10
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• 2019

Cr-Al alloys are attracting attention as oxidation resistant coating materials for high temperature metallic materials due to their excellent high temperature stability. However, the mechanical properties and oxidation resistance of Cr-Al alloys can be further enhanced, and such attempts are made in this study. To improve the properties of Cr-Al alloys, Si is added up to 5 wt%. Casting specimens with different amounts of Si content are prepared by a vacuum arc remelting method and isothermally heated under steam conditions at $1,100^{\circ}C$ for 1 hour. The as-cast microstructure of low Si alloys is mainly composed of only a Cr phase, while $Al_8Cr_5$ and $Cr_3Si$ phases are also observed in the 5 % Si alloy. In the high Si alloy, only Cr and $Cr_3Si$ phases remain after the isothermal heating at $1,100^{\circ}C$. It is found that Si additions slightly decrease the oxidation resistance of the Cr-Al alloy. However, the microhardness of the Cr-Al alloy is observed to increase with an increasing Si content.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.170.2-170
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.146-146
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• 2005