• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.201-205
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• 2002

The tunneling magnetoresistance (TMR) of a ramp-edge type junction has been studied. The samples with a structure of NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics was obtained from a ramp-type tunneling junctions having the dominant difference between zero and ＋90 Oe perpendicular to the junction edge line. The voltage dependence of TMR was stable up to a bias volt of $\pm$10 V with a TMR ratio of about -10%, which may be very peculiar magnetic tunneling properties with asymmetric tunneling process between wedge Co pinned layer and NiFe free layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.63-70
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• 1994

Single crystals of the superionic conductor ${\beta}-Ag_3SI$ were prepared by thermal treatmentr from the reactant mixture of AgI and $Ag_2S$. The growing single crystals were made to spherical shape of $200{mu}m$ in diameter. The detailed structures analyses revealed that $Ag^+$ in ${\beta}-Ag_3SI$ distribute on 12h site of 4-coordination inpreference to 3c site of 6-coordination. The effective one-particle potential (o.p.p.). of $Ag^+$ along [110] direction was evaluated from the probability density function(p.d.f.) Activation energy calculated from the o.p.p. curve has been found to be 0.012 eV for the diffusion of $Ag^+$ on (001) plane in the ${\beta}-Ag_3SI$ structure.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.177-181
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• 2000

The tunneling current is exponentially dependent on the separation gap between a pair of conductors. The detection of displacement can be, therefore, carried out by measurment of a variation in the tunneling current. In this experiment, we fabricated pyramid-type silicon tunneling devices in which a tunneling current flow between a micro-tip and $Si_3N_4$ thin film membrane. A MEMS process was used for the fabrication of the tunneling devices. The micro-tips were formed on Si wafers by undercutting a differently oriented square of $SiO_2$ with KOH. The stiffness of the $Si_3N_4$ films were observed and the model for the stiffness calculation, which is useful in predicting the stiffness even when the stiffness ranges beyond the scope of the normal experimental condition, was suggested.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.1
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• pp.145-156
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• 1990

In this study, thermophysical properties of the engineering ceramic materials such as $Al_{2}$O$_{3}$, Si$_{3}$N$_{4}$ and SiC were measured b y a single rectangular pulse heating method. The values of thermal diffusivities, specific heats, and thermal conductivities were measured as a function of temperature ranging form room temperature to 1300K. The measured thermal properties of one group of ceramic material were compared with those of other group and discussed in detail in connection with the chemical composition. Thus, some criteria for thermal design with the engineering ceramic materials were proposed.

• Magazine of the Korea Institute for Structural Maintenance and Inspection
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• v.17 no.3
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• pp.6-17
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• 2013

• Journal of the KSME
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• v.54 no.6
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• pp.36-40
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• 2014

이 글에서는 기계/토목/지반 분야에 따라 설계/해석자들이 관심을 가지는 다물리현상의 종류와 각 분야별로 (주)마이다스아이티에서 개발/보급하고 있는 관련 소프트웨어 현황에 대해 소개하고자 한다.

• Proceedings of the Korean Society for Food Science of Animal Resources Conference
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• 1997.06a
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• pp.110-110
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• 1997

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.51.1-51.1
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.200-200
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• 2009

• Bulletin of the Korean Space Science Society
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• 2006.04a
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• pp.85-85
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• 2006