• Tribology and Lubricants
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• 제20권5호
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• pp.231-236
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• 2004

Sulfur Hexafluoride, S $F_{6}$ is widely used for leak detection and as a gaseous dielectric in transformers, condensers and circuit breakers. S $F_{6}$ gas is also effective as a cleanser in the semiconductor industry. This paper presents a numerical study of the sealing force of disk type seal in S $F_{6}$ gas safety valve. The sealing force on the disk seal is analyzed by the FEM method based on the Taguch's experimental design technique. Disk seals in S $F_{6}$ gas safety valve are designed with 9 design models based on 3 different contact length, compressive ratio and gas pressure. The calculated results of Cauchy stress and strain showed that the sealing characteristics of Teflon $^{ }$PTFE is more effective compared to that of FKM(Viton), which is related to the stiffness of the materials. And also, the contact length of the disk seal is important design parameter for sealing the S $F_{6}$ gas leakage in the safety valve.afety valve.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.265-272
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• 2000

In this paper the corona discharge in SF$_{6}$ gas used as insulating material in lots o high voltage equipment, is simulated by finite element method with Flux-Corrected Transport(FCT) method. By application of proposed method the negative corona discharge characteristics in needle to plane electrode is analyzed with time step. For the accuracy of analysis the secondary electron emission by photon and ion are also considered as well as the accuracy of analysis the secondary electron emission by photon and ion are also considered as well as townsend first ionization and electron attachment. The calculated results show that the electric field intensity between anode and ion group is decreased as times go-by according to field distortion by those space charge. Accordingly the electron density is decreased strongly by the attatchment effect of SF6 gas so that the corona discharge becomes extinguished abruptly.y.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.447-452
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• 1998

The selective dry etching of GaAs to Al\ulcornerGa\ulcornerAs using $BCI_3/SF_6$ gas mixture in electron cyclotron resonance(ECR) plasma is investigated. A selectivity of GaAs to AlGaAs of more than 100 and maximum etch rate of GaAs are obtained at a gas ratio $SF_6/BCI_3+SF_6$ of 25%. We verified the formation of $AlF_3$ on $Al_{0.25}Ga_{0.75}As$from the Auger spectra which enhanced the etch selectivity. In order to investigate surface damage of AlGaAs caused by ECR plasma, we performed a low temperature photoluminescence(PL) measurement as a function of RF power. As the RF power. As the RF power increases, the PL intensity decreases monotonically from 50 to 100 Wand then repidly decreases until 250 W. This behavior is due to surface damage by plasma treatment. This dry etching technique using $BCI_3/SF_6$ gas mixture in ECR plasma is suitable for gate recess formation on the GaAs based pseudomorphic high electron mobility transistor(PHEMT)

• 전기학회논문지
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• 제59권8호
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• pp.1416-1422
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• 2010

$SF_6$ is the most commonly used insulating gas in electrical systems. But In these days $SF_6$ mixtures and alternative gas has been studied because of global warming. so although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/N_2$ mixtures. At present study the breakdown characteristics of $SF_6/N_2$ mixtures in Non-uniform field was performed. In this paper, The simulation value are compared with experiment values. Streamer breakdown criterion was used for predicting breakdown voltage. For accurate simulation this simulation apply utilization factor using CST(computer simulation technology) EM $studio^{tm}$ program. AC breakdown experiments in non-uniform field was performed to compare with the breakdown simulation values. The pressure range of gas mixtures was 0.4 MPa to 0.7 MPa. The rod-plane was used and mixture ratio is $SF_6$ 20% : $N_2$ 80%. The gap lengths are 10mm to 70mm. As the pressure increase, this simulation value does not correspond to the experiment value. So this simulation need surface roughness factor. As a result of applying surface roughness factor this simulation decrease a relative error (|experiment value - simulation value| /simulation value).

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권8호
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• pp.354-358
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• 2003

In this paper, insulations characteristics by temperature changes(＋50～-50[$^{\circ}C$]) of $SF_{6}$ gas in the experimental chamber were studied. From this result, at the low temperature, the breakdown voltage was increased with a drop of temperature and an increase of inner pressure in GIS. In addition the ability of insulation of liquid $SF_{6}$ was higher than that of the highly pressurized $SF_{6}$ gas. That is, with progress of low temperature, the main reason of breakdown was not liquefaction of $SF_{6}$ but rapid decrease of inner pressure. This study will come in greatly handy for the insulation design of GIS in a hard cold region

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 학술대회 논문집 전문대학교육위원
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• pp.72-75
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• 2001

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of $SF_6$ and $SF_6+Ar$ mixtures. The electron transport, ionization, and attachment coefficients for pure $SF_6$ and gas mixtures containing $SF_6$ has been analysed over the E/N range $30{\sim}300Td$ by a two term Boltzrnann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2% and 0.5% $SF_6+Ar$ mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.49-49
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• 2010

In this paper, a full scaled gas discharge chamber was designed and fabricated for evaluating the dielectric performance of SF6/N2 mixture gases. And it describes work on AC and lightning impulse dielectric characteristics of SF6/N2 mixture insulation gas from experiments and full scale models.

• E2M - 전기 전자와 첨단 소재
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• 제9권4호
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• pp.385-395
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• 1996

이 논문은 금속성 돌기물에 의한 불평등전계중에서의 비진동성과 진동성 임펄스전압에 의한 SF$_{6}$ 가스의 절연파괴 특성에 대해 기술하였다. 절연파괴전압-시간특성을 가스압 0.1-0.5MPa의 범위에서 정.부 극성의 전압을 인가하여 측정하였으며, 그리고 50.ohm.분류기를 통해서 전구방전 전류를 관측하였다. 가스압력에 의한 리이더 진전시간의 의존성도 측정하였다. 스트리머 코로나에 의해 발생하는 공간전하에 의한 국부전계강화는 시험갭의 전기적 절연파괴에 영향을 미치는 것으로 판명되었다. 절연파괴는 초기 스트리머 코로나로부터 발단되어, 국부전계강화에 의한 리이더진전으로 이루어진다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제49권3호
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• pp.152-158
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• 2000

This paper deal with the experimental discussion about the impulse and AC dielectric strength of SF6 gas insulated transformer. Test sample is measured the dielectric breakdown voltage about modeling of the first and second section which is the weakest for surge voltage. The AC breakdown voltage is appeared 1.4 times than impulse breakdown voltage, so we can estimate that the impulse breakdown voltage is severe to AC breakdown voltage, and when the impulse is applied, in case of lmm tapping with Nomex paper, the characteristics of dielectric breakdown voltage is same to that in oil immersed transformer when SF6 gas pressure is 2.2kg/$cm^2$G.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.85-93
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• 2000

In this paper, the predischarge propagation processes of SF\ulcorner gas stressed by impulse voltages under nonuniform electric field perturbed by a needle protrusion are described. The statistical and formative time-lags and the time interval between leader pulses were investigated on the basis of the predischarge current measured in the gas pressure range of 0.1~0.5 MPa. The predischarge current is closely related to the waveform, amplitude and polarity of applied votages, the gas pressure and the gap geometry. Both the positive and negative predischarge processes in nonuniform electric field develop in a regime of stepwise leader propagation leading to electrical breakdown. The mean of the time interval between leader pulses gives about a factor of 10 higher for the negative than for the positive leader current puls-es. According as the gas pressure increases, the statistical time-lag was almost unchangeable, but the formative time-lag was gradually decreased.