• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.252-255
• /
• 1996

Cl-based gas chemistry is generally used to etching for Al alloy metallization. After the etching of Al alloy with Cl-based gas plasma, residual chlorine on Al alloy reacts with $H_2O$ due to air exposure and results in Al corrosion. In this study, the corrosion Phenomena of Al were examined with XPS(X-ray photoelectron spectroscopy) and SEF(Scanning electron microscopy). It was confirmed that chlorine mainly existed at the grain boundary of Al alloy after plasma etching of Al alloy with Cl-based gas chemistry and Al corrosion was largely generated at the grain boundary of Al a1loy. And residual chlorine was passivated by sulfur and fluorine which were generated by SF$_{6}$ plasma. These effects of passivation reduced the Al corrosion due to air exposure.e.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 A
• /
• pp.104-108
• /
• 1997

The puffer type GCB(gas circuit breaker) has been widely used in modern transmission power system. Understanding the motion of cold $SF_6$ gas flow is essential for the better design of those GCB's. For this purpose, a program using the so-called FLIC(Fluid-In-Cell) method has been developed and applied to a puffer type GCB. The calculated results are compared with those from the measurement and the computation by commercial CFD (Computational Fluid Dynamics) package 'RAMPANT' and show fairly good agreement.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.104.2-104.2
• /
• 2013

A residual gas analyzer (RGA) system has been developed in this laboratory. Characteristics of the RGA system parts such as ion source, quadrupole mass filter and sensitivity are introduced. Some efforts have been made to improve performance of the two types of ion sources, open ion source (OIS) and closed ion source (CIS). A metal mesh was placed onto the electron beam entrance of the CIS anode tube to block the filament field penetration. Sensitivity of the CIS ion sources with and without the mesh was compared by mass spectra of SF6 gas (97% He base) introduced into the CIS anode through a needle valve. About ten-times improvement in the RGA sensitivity was observed for the CIS with the mesh in the electron entrance. Computer simulation showed an axi-symmetric anode potential distribution and improved focusing of the electron beam inside the anode tube with the mesh.

• 대한전자공학회논문지
• /
• 제24권1호
• /
• pp.91-96
• /
• 1987

Plasma etching can obtain less damaged etch surface than reactive ion etching. This study was performed to get anisotropic etching characteristics of Si using two step etching technique with C2CIF5 and SF6 gas mixture. The results show that the etch rate and aspect ratio of silicon was increased with increment of SF6 contents. The bulging phenomenon on trench side wall in the plasma one-step etching technique was eliminated by the two step etching technique. The anisotropy was decreased from 12(at 120m Torr) to 2.2(at 400m Torr) with increasing the chamber pressure. At the low rf power (350 watts) anisotrpy of silicon was obtained 7 lower than that of high rf power (650 watts. A:~9). In Summary we obtained anisotropic etching profiles of silicon with e 6\ulcornerm depth by using the plasma two-step etching technique.

• 한국산학기술학회논문지
• /
• 제19권1호
• /
• pp.69-74
• /
• 2018

산업사회의 발달과 더불어 신뢰성 높은 양질의 전기에너지와 운전 및 보수의 간편화, 계통 운용의 신뢰성, 안전성 확보가 요구되고 있다. 본 논문에서는 각종 전력설비에서 SF6을 대체하여 사용되고 있는 친환경절연제 $N_2-O_2$ 혼합가스 고체 절연물의 절연파괴특성과 고체절연재로 사용되고 있는 테프론의 연면절연특성을 압력에 따른 특성을 확인하였다. 대기와 비슷한 성분비 일 때 상대적으로 절연파괴특성이 테프론의 연면절연특성이 안정화되며, Paschen 법칙에 의해 평등전계에 가까운 전극중의 기체의 절연파괴전압은 압력에 비례하여 높아지고 있음을 실험을 통하여 확인하였다. 연면절연파괴전압은 압력에 따라 선형적으로 증가하였으며, 혼합가스의 $O_2$ 가스 혼합비에 따라 절연파괴전압의 차이가 발생하였다. 이는 $O_2$ 가스의 전기적 부성기체의 영향과 분자 간 충돌거리에 의해 연면절연파괴전압이 달라졌고, 본 연구에서 분자 간 충돌거리의 영향이 더 크게 작용하였다. 연면절연특성에 따른 테프론에 적용 가능한 절연파괴전압 관계식을 산출하였다. 이러한 결과는 전력설비의 절연설계 시 기초자료로 사용될 수 있을 것이라 생각된다.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2002년도 하계학술발표회
• /
• pp.248-249
• /
• 2002

The gaseous molecular condensation retardation by laser excitation has been known, but with limited success. Condensation inhibition between the gas phase molecules by laser excitation was clearly shown in many experiments.(1)-(2) However, surface condensation inhibition of the excited molecules has been controversial for the last several decades.(3)-(4) In 1994, S. J, Sibener and Y. T. Lee published an experimental evidence of the internal energy dependence of the surface condensation of gaseous $SF_{6}$ and $CCl_4$ molecules. (omitted)

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 E
• /
• pp.2117-2119
• /
• 1999

In this paper, the electric fields inside GIS with metal impurity is analysed by the use of 3 dimensional Surface Charge Method. We find the metal impurity makes electric field distribution inside GIS non-uniform and causes breakdown of $SF_6$ gas in GIS.

• Bulletin of the Korean Chemical Society
• /
• 제17권8호
• /
• pp.686-688
• /
• 1996

We have produced nanophase iron clusters inside a gas cell by decomposing iron pentacarbonyls from the mixture of ~20 Torr Fe(CO)5/~3 Torr SF6 with a pulsed CO2 laser. The product displayed a black tint. Its composition was identified to be mostly iron from an inductively coupled plasma (ICP) atomic emission spectrum. The X-ray diffraction (XRD) pattern indicates a body-centered cubic structure for the cluster. A transmission electron micrograph proves that their diameter ranges between 50 and 70 Å and their average diameter is 60 Å.

• 한국기계가공학회지
• /
• 제21권9호
• /
• pp.42-49
• /
• 2022

An underground electric switch is a high-voltage switch used in distribution network systems for a reliable power supply. Many studies are being conducted to expand the switch to use an eco-friendly gas using dry air instead of SF6 gas to reduce greenhouse gas emissions. In this study, a flow analysis model was established to improve the performance of an eco-friendly gas switch. The results were compared and reviewed through experiments. For the optimal arc grid design applied to the switch, the flow characteristics based on the flow path configuration and the changes in arcing time for each configuration were compared. Flow analysis can predict the switch flow distribution, and a comparative review of the flow path configurations of various methods is possible.

• 한국초전도ㆍ저온공학회논문지
• /
• 제11권2호
• /
• pp.1-6
• /
• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.