• 제목/요약/키워드: SE analysis

검색결과 5,205건 처리시간 0.037초

비구면렌즈 설계를 위한 칼코게나이드 Ge-Sb-Se 광학계 및 결정화 특성 연구 (Chalcogenide Ge-Sb-Se Optical and Crystallization Characteristics for Basic a Planning Aspheric Lens)

  • 명태식;고준빈
    • 한국재료학회지
    • /
    • 제26권11호
    • /
    • pp.598-603
    • /
    • 2016
  • The recent development of electro-optic devices and anticorrosion media has led to the necessity to investigate infrared optical systems with solid-solid interfaces of materials that often have the characteristic of amorphousness. One of the most promising classes of materials for those purposes seems to be the chalcogenide glasses. Chalcogenide glasses, based on the Ge-Sb-Se system, have drawn a great deal of attention because of their use in preparing optical lenses and transparent fibers in the range of 3~12 um. In this study, amorphous Ge-Sb-Se chalcogenide for application in an infrared optical product design and manufacture was prepared by a standard melt-quenching technique. The results of the structural, optical and surface roughness analysis of high purity Ge-Sb-Se chalcogenide glasses are reported after various annealing processes.

$Cd_{1-x}Co_xIn_2Se_4$ 결정의 XPS 분석 (XPS Analysis of $Cd_{1-x}Co_xIn_2Se_4$ Crystals)

  • 최성휴
    • 한국진공학회지
    • /
    • 제3권3호
    • /
    • pp.355-359
    • /
    • 1994
  • Cd1-xCoxIn2Se4(X=0.50) 결정을 수직 Bridgman 방법으로 성장시키고 성장된 결정의 결정구조 및 XPS 특성을 연구하였다. 성장된 결정은 pseudocubic 구조이고 격자상수는 a=5.778$\AA$으로 주어졌다. Cd1-xCoxIn2Se4 결정의 각 성분원소인 cadmium cobalt indium 그리고 selenium에 대한 XPS spectrum으 로부터 결합에너지와 결합상태를 조사하였다. Cd1-xCoxIn2Se4결정과 결합하지 안는 각 성분원소인 cadium cobalt imdium 그리고 selenium에 대한 core level의 XPS spectrum과 비교하면 각 성분원소상 이의 결합에 의한 chemical shift 현상 때문에 core level의 결합에너지가 0.10~4.87 eV 차이가 있다. Cd1-xCoxIn2Se4 결정에서 Co 2P3/2 core level의 주 peak와 statellite peak와의 결합에너지 차이로부터 cadmium과 치화된 cobalt는 Co2+ ion으로 Td symmetry 점에 위치함을 알 수 있다.

  • PDF

보안 안전성을 위한 자동화 보안진단평가 시스템에 관한 연구 (A Study on Automatic Security Diagnostic Evaluation System for Security Assurance)

  • 엄정호;박선호;정태명
    • 디지털산업정보학회논문지
    • /
    • 제5권4호
    • /
    • pp.109-116
    • /
    • 2009
  • In the paper, we designed an automatic security diagnostic evaluation System(SeDES) based on a security diagnostic evaluation model(SeDEM) for an organization's security assurance. The SeDEM evaluates a security level of an organization quantitatively by a security evaluation formula which is composed of security variables and security index as applying the statistical CAEL model for evaluate risk level of banks. The SeDES has a good expandability as changing security variables according to an organization scale, characteristics and so on. And it also has a excellent usage because it inputs only numeric data got from statistical technique to security index. We can understand more a security level correctly than the existent risk assessment system because it is possible to assess quantitatively with an security grade as well as score. analysis.

Zinc Blende 구조를 가지는 ZnSe 결정의 밴드 특성에 관한 연구 (A Study on the Band Characteristics of ZnSe Thin Film with Zinc-blende Structure)

  • 박정민;김환동;윤도영
    • 전기화학회지
    • /
    • 제14권3호
    • /
    • pp.145-151
    • /
    • 2011
  • ZnSe는 가시광선 영역에서 넓은 밴드갭을 가지고 있는 II-VI족 화합물 반도체 소자로서 레이저 다이오드, 디스플레이 그리고 태양전지와 같은 다양한 응용분야에 적용되고 있다. 본 연구에서는 전기화학적 전착방법을 이용하여 ITO 전극상에 ZnSe 박막을 합성하여, XRD와 SEM으로 ZnSe 결정의 합성과 zinc blende 구조의 형태를 관측하였고, UV 분광기를 활용하여 밴드갭을 측정한 결과 2.76 eV이었다. 또한, 분자동역학에서 활용되는 밀도범함수 이론 (DFT, Density Functional Theory)을 도입하여 ZnSe 결정에 대한 밴드 구조의 해석을 수행하였다. Zinc blende구조를 갖는 ZnSe 결정에 대하여 LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), 그리고 B3LYP (Becke, 3-parameter, Lee-Yang-Parr) 범함수를 이용하여 밴드구조와 상태밀도 (Density of State)를 모사하였다. 각각의 경우에 대해 에너지 밴드갭을 구한 결과, B3LYP 범함수로 해석한 경우에 실험치와 근사치인 2.65 eV의 밴드갭을 보여주었다.

기판 온도 변화에 따른 Cu(In,Ga)Se2 박막에 관한 연구 (A Study on Cu(In,Ga)Se2 Thin Film with Substrate Temperature Change)

  • 박정철;추순남
    • 한국전기전자재료학회논문지
    • /
    • 제26권12호
    • /
    • pp.888-893
    • /
    • 2013
  • In this paper, we prepared $Cu(In,Ga)Se_2$ thin films by using co-evaporation method, and analyzed the properties of the thin films. During the thin film preparation process, we confirmed $InGaSe_2$ phase was formed at $400^{\circ}C$ in first stage, and also confirmed the thin films showed the vacancy decrease. In second and third stage, we confirmed the density increase of crystalline structure at over $480^{\circ}C$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ phase. As the result of SEM and XRD analysis of the films which were before and after heat-treated, we confirmed the disappearance of $Cu_2Se_2$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ single phase after the heat-treatment, We, therefore, confirmed the heat-treatment did not affect the absorbency spectra of the thin films.

Sputtering Deposition of $CuInSe_{2}$ and $CuInZnSe_{2}$ Thin Films using Mixture Binary Chalcogenide Powders

  • ;국준표;김규호
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 한국신재생에너지학회 2007년도 춘계학술대회
    • /
    • pp.257-260
    • /
    • 2007
  • In this study, $CuInSe_{2}$ (CISe) and $CuInZnSe_{2}$ (CIZSe) thin films were prepared on Corning 1737 glass by radio frequency (RF) magnetron sputtering from binary chalcogenide mixed powder targets. The targets were initially prepared by mixing appropriate weights of CuSe, InSe powder and various ZnSe contents. From the film bulk analysis result, it is observed that Zn concentration in the films increases proportionally with the addition of ZnSe in the sputtering targets. Under optimized conditions, CISe and CIZSe thin films grow as a chalcopyrite structure with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^{4}$ $cm^{-1}$. An increasing of optical band gap from 1.0 eV (CISe) to 1.25 eV (CIZSe) is found to be proportional with an increasing of Zn concentration as expected. All films have a p-type semiconductor characteristic with a carrier concentration in the order of 1014 $cm^{-3}$, a mobility about $10^{1}$ $cm^{2{\cdot}-1}{\cdot}s^{-1}$ and a resistivity at the range of $10^{2}-10^{6}$ W${\cdot}$m.

  • PDF

파밤나방 핵다각체병 바이러스의 생화학적 특성 (Biochemical Characteristics of Spodoptera exigua Nuclear Polyhedrosis Virus)

  • 진병래;박범석;재연호;강석권
    • 한국응용곤충학회지
    • /
    • 제30권2호
    • /
    • pp.144-149
    • /
    • 1991
  • 국내에서 분리된 파밤나방 핵다각체병바이러스(Spodoptera exigua nuclear polyhedrosis virus: SeNPV)의 생화학적인 특성을 규명하기 위하여 몇가지 실험을 행하였다. SeNPV는 하나의 envelopeso내에 다수의 nucleocapsid가 존재하는 MNPV(multiple embeded NPV)형태였다. 다각체단백질은 분자량 30kb의 단일 band로 나타났으며, Spodoptera litura NPV와 Bombyx mori NPV의 다각체단백질 항체에 반응하여 뚜렷한 침강선을 형성하였다. 비리온 단백질을 은염색한 결과, 많은 수의 minor band들이 포함된 49개의 band로 나타났으며, 바이러스 DNA를 분리하여 여러종의 제한효소에 의한 대략적인 genome size는 약 110kb 였다.

  • PDF

$Zn_4SnSe_6:Co^{2+}$ 단결정의 성장방법에 관한 연구 (The Single Crystal Growth Method of undoped and Co-doped $Zn_4SnSe_6$)

  • 김덕태;박광호;현승철;방태환;김남오;김형곤
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
    • /
    • pp.27-30
    • /
    • 2006
  • In this paper, the undoped and Co-doped $Zn_4SnSe_6$ single crystals grown by the chemical transporting reaction(CTR) method using iodine as a transporting agent are investigated. For the crystal growth, the temperature gradient of the CTR furnace was kept at $680^{\circ}C$ for the source zone and at $780^{\circ}C$ for the growth zone for 7days. It was found from the analysis of x-ray diffraction that the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ compounds have a monoclinic structure. The direct optical energy band gap of the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ single crystals at 300K were found to be 2.146eV and 2.042eV.

  • PDF

사람 코점막에서 분리된 메티실린 내성 Staphylococcus epidermidis Z0117SE0041의 유전체 염기서열 (Complete genome of methicillin resistant Staphylococcus epidermidis Z0117SE0041 isolated from human nasal mucosa)

  • ;오재영;한재익;송원근;박희명;채종찬
    • 미생물학회지
    • /
    • 제54권4호
    • /
    • pp.474-476
    • /
    • 2018
  • 메티실린 내성 Staphylococcus epidermidis Z0117SE0041을 반려견 주인의 코점막으로부터 분리하였다. 완전 해독된 Z0117SE0041 균주의 게놈은 약 2.5 Mb의 염색체와 47 kb, 36 kb, 11 kb 크기의 3개 플라스미드로 구성되어 있었다. Z0117SE0041 균주는 병을 유발하거나 항생제 내성을 전파할 수 있는 가능성이 있으므로 보다 깊이 있는 유전체 분석이 요구된다.

글루타티온이 캡핑된 ZnSe 나노 입자 발광 특성에 미치는 합성 조건의 영향 (Effects of Synthesis Conditions on Luminescence Characteristics of Glutathione Capped ZnSe Nano particles)

  • 백금지;송하연;이민서;홍현선
    • 한국분말재료학회지
    • /
    • 제28권1호
    • /
    • pp.44-50
    • /
    • 2021
  • Zinc selenide (ZnSe) nanoparticles were synthesized in aqueous solution using glutathione (GSH) as a ligand. The influence of the ligand content, reaction temperature, and hydroxyl ion concentration (pH) on the fabrication of the ZnSe particles was investigated. The optical properties of the synthesized ZnSe particles were characterized using various analytical techniques. The nanoparticles absorbed UV-vis light in the range of 350-400 nm, which is shorter than the absorption wavelength of bulk ZnSe particles (460 nm). The lowest ligand concentration for achieving good light absorption and emission properties was 0.6 mmol. The reaction temperature had an impact on the emission properties; photoluminescence spectroscopic analysis showed that the photo-discharge characteristics were greatly enhanced at high temperatures. These discharge characteristics were also affected by the hydroxyl ion concentration in solution; at pH 13, sound emission characteristics were observed, even at a low temperature of 25℃. The manufactured nanoparticles showed excellent light absorption and emission properties, suggesting the possibility of fabricating ZnSe QDs in aqueous solutions at low temperatures.