• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.997-999
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• 2012

Digital X-ray image detector is widely used for radiodiagnosis. Amorphous selenium has been received attention as one of the major material that confirmed photoconductor of direct methode detector. We analysis the photocurrent using 2-dimensional device simulator when blue-ray (${\lambda}=486nm$) is irradiated and high voltage is biased. We evaluate electron-hole generation rate, electron-hole recombination rate, and electron/hole distribution in the amorphous selenium. This simulation methode is helpful to the analysis of digital X-ray image detector. We expect that many applications will be developed in digital X-ray image detector using 2-dimensional device simulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.366-369
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• 2002

At present, the study of direct digital X-ray detector and indirect digital X-ray detector proceed actively. But it needs high thickness and high voltage in selenium for high ionization rate. Therefore, we carried out the study of electric characteristics of a-Se with additive ratio of Iodine in drafting study for developing Hybrid X -ray Sensor for complementing direct digital X -ray detector and indirect digital X-ray detector in this paper. On this, there are formed Amorphous selenium multi-layers by sticking phosphor layer$(Gd_{2}O_{2}S(Eu^{2+}))$ using optical adhesives of EFIRON Co. Amorphous selenium multi-layers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. We make Amorphous selenium multi-layers with $30{\mu}m$ thickness on glass.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.375-378
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• 2002

There has recently been a great deal of interest in amorphous selenium for application of digital x-ray image sensor. The initial number of the electron-hole induced by interaction a-Se with x-ray photons and the collection efficiency to surface of generated charges are important parameters for x-ray sensitivity of the a-Se. Therefore, in this paper, we analyzed that thickness of a-Se film and electric field is affected on the initial number of electron-hole and the collection efficiency. The experimental value of x-ray induced charge about the various thickness and the electric field is compared with estimated absorbed energy through MCNP 4C code to analyze the mechanism x-ray induced signal of a-Se. The experimental results showed that the electric field depends on initial escape coefficient and the thickness depends on collection coefficient than escape efficient.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.853-856
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• 2002

Present. direct method x-ray conversion detector is studied by abroad medical instrument and country with amorphous Selenium. And we search the method for large area x-ray detector. Amorphous-Selenium based photoreceptor is widely used on the X-ray conversion materials. But amorphous-selenium based x-ray conversion detector is broken by high voltage and leakage defect point. In this paper, We investigated top-electrode distance rate to improve defect point and high voltage broken. The result to appoint to made large area x-ray conversion detector with base data.

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

• Analytical Science and Technology
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• v.13 no.2
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• pp.222-228
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• 2000

A detector for monitoring carbon monoxide (CO) in ambient air by nondispersive infrared (NDIR) spectroscopy has been developed and investigated its sensitivity and stability. The essential parts of the absorption cell are three spherical concave mirrors so as to improve the sensitivity by increasing the light path length in the cell. The radius and center of curvature of mirrors and position in the cell was calculated by computer simulation in order that the light path length may be 16m into the 50cm cell. The number of traversals and optical path properties were confirmed by laser beam alignment in transparent absorption cell. The photoconductive type lead selenide (PbSe) was used as CO sensing material, which was cooled to increase the responsibility by thermoelectric cooling method. The detection limit and span drift of the developed CO detector was 0.24ppm and 0.03ppm(v/v) respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.436-439
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• 2002

Recently, It has performed that the basic research of the photoconductive material and the development and application of the digital radiograph detector which is divided into the direct and indirect method. The objective of this study investigate the effect of the electric characteristic about changing the composition of Arsenic in hybrid detector system for compensating a defect of conventional. We fabricated samples using the amorphous Selenium and Arsenic alloy with various concentrations of the Arsenic{seven step 0.1%, 0.3%, 0.5%, 1%, 1.5%, 3%, 5%). And using EFIRON optical adhesives the formed multi-layer$(Gd_{2}O_{2}S(Eu^{2+}))$ composed phosphor layer. X-ray and light sensitivity was measured to study x-ray response characteritics. As results, highest value was measured as output net charge and SNR were $315.7pC/cm^2/mR$ and 99.4 at 0.3%As doping ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.391-394
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• 2002

There has recently been much interest and research in developing digital x-ray systems based on using amorphous selenium(a-Se) photoconductors as the image receptor. The amorphous selenium layer that is currently being studied for use as an x-ray photoconductor is not pure a-Se but rather amorphous selenium alloyed with arsenic. We fabricated samples using the selenium and arsenic alloy with various concentrations of the arsenic. In this work, x-ray photoconductor using amorphous selenium alloyed with arsenic were fabricated with different concentrations of the arsenic (0.1 wt.%, 0.3wt.%, 0.5wt.%, 1wt.%, 1.5wt.%, 3wt.%, 5wt.%). The seven kind of samples was fabricated with a-Se alloyed with arsenic through vacuum thermal evaporation. We also investigate the arsenic concentration dependence on the device performance in radiation detector. The electric characteristics of radiation detector devices with changing additive ratio of the arsenic is performed by measuring the x-ray induced photocurrent and integrating it over time to find the total charge. The thickness of a-Se is $100{\mu}m$. Bias voltages $3V/{\mu}m$, $6V/{\mu}m$， $9V/{\mu}m$ are applied at the samples. As results, the net charge of a-Se 0.3% As sample is $526.0pC/mR/cm^2$ at $9V/{\mu}m$ bias. The net charge is decreased as with the increasing additive ratio of arsenic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.817-820
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• 2002

Amorphous selenium based flat panel detectors convert incident x-ray to electric signal directly. Flat panel detectors gain more interest real time medical x-ray imaging. TFT array and electric readout circuits are used in this paper offered by LG.Philips.LCD. Detector is based on a $1536{\times}1280$ array of a-Si TFT pixels. X-ray conversion layer(a-Se) is deposited upper TFT array with a $400{\mu}m$ by thermal deposition technology. Thickness uniformity of this layer is made of thickness control system technology$({\leq}5%)$. Each $139{\mu}m{\times}139{\mu}m$ pixel is made of thin film transistor technology, a storage capacitor and collecting electrode having geometrical fill factor of 86%. This system show dynamic performance. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.282-283
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• 2006

The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.