• Electrical & Electronic Materials
• /
• v.10 no.3
• /
• pp.226-232
• /
• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

• Korean Journal of Radiology
• /
• v.23 no.2
• /
• pp.189-201
• /
• 2022

Objective: To compare the outcomes of radiofrequency ablation (RFA) using dual switching monopolar (DSM), switching bipolar (SB), and combined DSM + SB modes at two different interelectrode distances (25 and 20 mm) in an ex vivo study, which simulated ablation of a 2.5-cm virtual hepatic tumor. Materials and Methods: A total of 132 ablation zones were created (22 ablation zones for each protocol) using three separable clustered electrodes. The performances of the DSM, SB, and combined DSM + SB ablation modes were compared by evaluating the following parameters of the RFA zones at two interelectrode distances: shape (circularity), size (diameter and volume), peritumoral ablative margins, and percentages of the white zone at the midpoint of the two electrodes (ablative margin at midpoint, AMm) and in the electrode path (ablative margin at electrode path, AMe). Results: At both distances, circularity was the highest in the SB mode, followed by the DSM + SB mode, and was the lowest in the DSM mode. The circularity of the ablation zone showed a significant difference among the three energy groups (p < 0.001 and p = 0.002 for 25-mm and 20-mm, respectively). All size measurements, AMm, and AMe were the greatest in the DSM mode, followed by the DSM + SB mode, and the lowest were with the SB mode (all statistically significant). The white zone proportion in AMm and AMe were the greatest in the SB mode, followed by the DSM + SB mode and DSM in general. Conclusion: DSM and SB appear to be complementary in creating an ideal ablation zone. RFA with the SB mode can efficiently eradicate tumors and create a circular ablation zone, while DSM is required to create a sufficient ablative margin and a large ablation zone.

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.565-568
• /
• 1987

In order to determine the standard composition of ZnO varistor with higher nonlinearity, various contents of $MnO_2$, $Co_2O_3$ were added to ZnO-1.0m/o $Bi_2O_3$ system. Also, samples that contained small amount of Sb, Si-oxides in standard composition determined before were fabricated. As a result, the standard composition of higher nonlinearity-oriented ZnO varistor was shown as ZnO-1.0 m/o $Bi_2O_3$-1.0m/o $MnO_2$-1.0m/o $Co_2O_3$ and $Sb_2O_3$ largely enhanced nonlinear exponent and nonlinear resistance, hut SiO largely enhanced nonlinear exponent only.

• ETRI Journal
• /
• v.38 no.3
• /
• pp.469-478
• /
• 2016

In this paper, we investigate the effects of pre-reducing Sb-doped $SnO_2$ (ATO) electrodes in viologen-anchored $TiO_2$ (VTO) nanostructure-based electrochromic devices. We find that by pre-reducing an ATO electrode, the operating voltage of a VTO nanostructure-based electrochromic device can be lowered; consequently, such a device can be operated more stably with less hysteresis. Further, we find that a pre-reduction of the ATO electrode does not affect the coloration efficiency of such a device. The aforementioned effects of a pre-reduction are attributed to the fact that a pre-reduced ATO electrode is more compatible with a VTO nanostructure-based electrochromic device than a non-pre-reduced ATO electrode, because of the initial oxidized state of the other electrode of the device, that is, a VTO nanostructure-based electrode. The oxidation state of a pre-reduced ATO electrode plays a very important role in the operation of a VTO nanostructure-based electrochromic device because it strongly influences charge movement during electrochromic switching.

• Journal of the Korean Ceramic Society
• /
• v.39 no.4
• /
• pp.386-393
• /
• 2002

Fabricatio of the potassium-titanate fiber with K2O${\cdot}nTiO_2$ composition and coating of electrically conductive Sb-doped $SnO_2$ (ATO: Antimony Tin Oxide) layer on the fiber on the fiber were the fiber were the aims of this work. The fiber fabricated by slow-cooling technique showed the mean length of $15{\mu}m$ and mean diameter of $0.5{\mu}m$. Three different coating methods i.e, sol-gel, co-precipitation and urea technique, were attempted to coat the conductive ATO layer on the potassium-titanate fiber. The influences of coating method, concentrations of ATO(5∼70wt%) and Sb (0∼20wt%), temperature in the range of $450\;to\;800^{\circ}C$, number of washing (3∼4 times) on the resistivity of the ATO coated fiber were examined in details. The fiber coated ATO by coprecipitation exhibited lower resistivity of 103${\Omega}{\cdot}$cm at the 30 wt% of ATO, and showed nearly constant low value of $60{\Omega}{\cdot}cm\;to\;90{\Omega}{\cdot}$cm at the higher concentration of ATO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.305-306
• /
• 2008

본 논문에서는 PRAM 에서 기록매질로 이용될 수 있는 최적의 물질을 찾고자 $Ge_2Sb_2Te_5$ 박막에 Al을 첨가하여 비정질-결정질 천이시의 원자구조와 상변화 특성간의 관계를 연구하였다. 이 실험에 사용된 $Al_x(Ge_2Sb_2Te_5)_{1-x}$ 조성은 5N의 금속 파우더를 용융-냉각법으로 벌크를 제작하였고 열증착 방법으로 Si (100) 및 유리 (corning glass, 7059) 기판위에 200nm 두께로 박막을 증착하였다. 비정질 박막의 상변화에 따른 반사도 차이를 평가하기 위해서 658 nm의 LD가 장착된 나노펄스 스캐너를 이용하여 power; 1~17mW, pulse duration; 10~460 ns의 범위에서 각 조성의 비정질-결정질 상변화속도를 측정, 비교 분석하였다. 또한 각각의 박막을 $100^{\circ}C$ 에서 $400^{\circ}C$ 까지 $50^{\circ}C$ 간격으로 $N_2$ 분위기에서 1시간동안 열처리 한 후 XRD와 UV-Vis-NIR spectrophotometer를 사용하여 각 상의 구조분석 및 광학적 특성을 분석하였다. 또한 4-point probe로 면저항을 측정하였다.

• Resources Recycling
• /
• v.21 no.5
• /
• pp.50-57
• /
• 2012

A comparative study has been carried out on the removal of impurities such As, Sb, Bi from the copper sulfate solution by ion exchange resin containing aminophosphosphonic acid as functional group. The various parameters which affect the removal of impurities; such as the reaction temperature, the reaction time, the amount of ion-exchange resins, the concentration of sulfuric acid in electrolyte, were studied. The basic experimental results showed that about 88% of Sb & 94% of Bi can be adsorbed in these chelate resins and removed from the copper sulfate solutions but As was removed below 10% from the solutions. And the selective elution of Bi and Sb from the adsorbed ion exchange resin also can be achieved by $H_2SO_4$ or HCl solutions. The results also showed that 98.1% of Sb and 96.6% of Bi can be adsorbed from the copper sulfate solutions after 2 Bed-volume of continuous ion exchange column test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.7
• /
• pp.585-593
• /
• 2008

In this work, we report several experimental data capable of evaluating the phase transformation characteristics of GeSbTe pseudobinary thin films comprehensively utilized as phase change materials. The phase transformation of the GeSbTe thin films was confirmed by XRD measurement from amorphous to hexagonal structure via fee structure except for $Ge_8Sb_2Te_{11}$. In addition, X-ray photoelectron spectra analysis revealed to weaken Ge-Te bond for $Ge_2Sb_2Te_5$ and to strengthen the bonds of all elements for $Ge_8Sb_2Te_{11}$ during the amorphous to crystalline transition. The values of optical energy gap $(E_{OP})$ were around 0.71 and 0.50 eV and the slopes of absorption in extended region (B) were ${\sim}5.1{\times}10^5$ and ${\sim}10{\times}10^5cm^{-1}{\cdot}V^{-1}$ for the amorphous and fcc-crystalline structures, respectively. Finally, the kinetics of amorphous-to-crystalline phase change on the GeSbTe films was characterized using a nano-pulse scanner with 658-nm laser diode (power; $1{\sim}17$ mW, pulse duration; $10{\sim}460$ ns).

• Journal of Powder Materials
• /
• v.10 no.3
• /
• pp.168-171
• /
• 2003

Interpenetrating phase composites of $TiB_2$-Cu system were produced via Spark-Plasma Sintering (SPS) oi nanocomposite powders. Under simultaneous action of pressure, temperature and electric current titanium diboride nanoparticles distributed in copper matrix move, agglomerate and form a fine-grained skeleton. Increasing SPS-temperature and he]ding time promote densification due to local melting of copper matrix When copper melting is avoided the compacts contain 17-20% porosity but titanium diboride skeleton is still formed representing the feature of SPS . High degree of densification and formation of titanium diboride network result in increased hardness of high-temperature SPS-compacts.

• Korean Journal of Materials Research
• /
• v.24 no.3
• /
• pp.145-151
• /
• 2014

Solution-based Sb-doped $SnO_2$ (ATO) transparent conductive oxides using a low-temperature process were fabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological, electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order to investigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer, and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and optical transmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with two sol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperature process ($300^{\circ}C$) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATO thin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at $300^{\circ}C$C exhibited the superb electrical (${\sim}7.25{\times}10^{-3}{\Omega}{\cdot}cm$) and optical transmittance (~83.1 %) performances.