• KSBB Journal
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• 제30권3호
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• pp.132-139
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• 2015

In order to use the symbiotic bacteria from ethomophatogenic nematodes as a biological control agent for agriculture, the cultural condition for maintaining phase I and antifungal activity was investigated. Symbiotic bacteria (SB) 1 stain from nematodes were selected from the three strains isolated from entomopathogenic nematodes. The growth of the SB 1 strain in NB, TSB, TY and YS medium was higher than that of the SB 2 and SB 3 strain. The packed cell volume of the SB 1 strain was reduced in NB medium which showed radical pH change. Phase I of the SB 1 strain was maintained in TSB medium after being stored for 2 weeks at $4^{\circ}C$. Culture broth with the SB 1 strain in TSB medium for 6 days and 7 days showed antifungal activities against Rhizoctonia solani KACC 40142, Botrytis cinerea Pers. KACC 40854, and Botrytis cinerea Pers. KACC 41008. Culture broth with the SB 1 strain in TSB medium containing 100 mM L-proline for 5 days showed antifungal activities against Rhizoctonia solani KACC 40142, and Botrytis cinerea Pers. KACC 40854.

• Imaging Science in Dentistry
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• 제48권4호
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• pp.277-281
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• 2018

Purpose: This study was performed to investigate the relationship between sleep bruxism(SB) and pulpal calcifications in young women. Materials and Methods: A total of 100 female participants between 20 and 31 years of age who were referred to our radiology clinic for a dental check-up, including 59 SB and 41 non-SB patients, were sampled for the analysis. SB was diagnosed based on the American Academy of Sleep Medicine criteria. All teeth were evaluated on digital panoramic radiographs to detect pulpal calcifications, except third molars, teeth with root canal treatment, and teeth with root resorption. Binary logistic regression analysis was used to determine the risk factors for pulpal calcifications. The Spearman correlation coefficient was applied and the Pearson chi-square test was used for categorical variables. To test intra-examiner reproducibility, Cohen kappa analysis was applied. P values <.05 were considered to indicate statistical significance. Results: A total of 2800 teeth were evaluated (1652 teeth from SB patients and 1148 from non-SB patients), and 61% of patients had at least 1 dental pulpal calcification. No statistically significant relationship was found between SB and pulpal calcifications (P>0.05). In SB patients, the total number of pulpal calcifications was 129, while in non-SB patients, it was 84. Binary logistic analysis showed that SB was not a risk factor for the presence of pulpal calcifications(odds ratio, 1.19; 95% CI, 0.52-2.69, P>.05). Conclusion: No relationship was found between SB and pulpal calcifications.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• 분석과학
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• 제13권6호
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• pp.731-735
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• 2000

상용되는 난연제인 DBDPE-$Sb_2O_3$ 중 안티몬을 신속 정확하게 분석하기 위하여 가압 산 분해법을 이용하여 전처리하였다. DBDPE-$Sb_2O_3$ 시료를 가압 산 분해장치 내에서 $H_2SO_4:HCl$(1:2) 혼합산을 가하여 $220^{\circ}C$에서 2시간 동안 분해시킨 후 AAS를 이용하여 Sb를 정량하였다. 그 결과 99.6-99.8%의 회수율과 0.94-1.07%의 변동계수값을 얻었다. 이 전처리 방법을 실제시료에 적용하여 40.3과 36.3%의 Sb 함량을 구할 수 있었다.

• 전기화학회지
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• 제8권3호
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• pp.135-138
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• 2005

본 연구에서는 구연산 수용액 전해질을 제조하여 전기도금 방식에 의해 III-V족 화합물 반도체 InSb를 전기화학적으로 합성하였다. 본 연구에서 제조된 InSb는 기존문헌에서 보고된 바와 달리 EPMA분석결과 In과 Sb의 조성비가 52:48로 화학양론을 정확하게 만족시키고 있고, XPS분석결과 전해질내의 구연산의 농도가 1.2M, pH가 4일 때 444.1 eV에서 InSb 화합물의 피크를 관찰하였으며 구연산의 농도가 1.2M보다 낮거나 pH가 4보다 낮을 때는 InSb화합물과 금속상태의 In이 혼재되어 있는 것을 확인하였다. 또한 XRD를 통하여 InSb(111)의 우선결정방위를 갖는다는 것을 확인하였고, I-V 특성 곡선 측정을 통해 rnSb가 고유한 반도체 특성을 보임을 확인하였다.

• 한국표면공학회지
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• 제29권6호
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• pp.884-890
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• 1996

We have investigated a structural change of Si(100)-($2 \times 1$)-Sb surface caused by atomic hydrogen adsorption at room temperature using time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) and low energy electron diffraction (LEED). We found that when atomic hydrogen adsorbs on the Si(100)-($2 \times 1$)-Sb surface, (1) the partial desorption of Sb atoms from the Si(100) surface occurs even at room temperature, (2) the rest Sb atoms are displaced from their original positions and form an almost two-dimensional layer with dispersive distribution of Sb atoms, and (3) the structural transformation into the Si(100)-($1 \times 1$)-H periodicity is induced by the formation of the $1 \times 1$-H dihydride phase on the Si substrate.

• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.13-17
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• 2009

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1604-1611
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• 2018

Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of $GaAs_xSb_{1-x}$, $In_{1-x}Ga_xSb$, and $InAs_xSb_{1-x}$ with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from $2{\mu}m$ to $12{\mu}m$ in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from $InAs_xSb_{1-x}$ and $In_{1-x}Ga_xSb$ samples even at room temperature show promising potential for IR photodetector applications.

• 한국주조공학회지
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• 제6권2호
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• pp.93-103
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• 1986

It is very important to obtain wear resistant ductile iron by adding more economical alloying elements. In this study, 10 heat of Mg-treated ductile iron were made according to Sb content (0-0.1% Sb). Each melt was tasted to 30 ${\o}test$ bars in $CO_2$ mold under the same condition and inspected wear characteristics, mechanical properties and microstructures. The results obtained from this study are as follows; 1. It is confirmed that Sb should be a simple and useful additive for improving wear resistance in ductile iron. 2. Hardness of ferrite and pearlite is improved with increasing Sb amount in ductile iron. 3. For ductile iron, the recommended ladle addition of Sb amount is to 0.02-0.03%. 4. Sb has adverse influence on spheroidizing of graphite if the amount is over 0.04%.

• 대한전자공학회논문지
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• 제16권4호
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• pp.32-35
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• 1979

SnO2- amorphous Sb 5 thin film-Sn structure에서 SnO2 창으로 photon을 입사시켰을 때 photo-voltaic 효과를 발견했으며 photon의 energy에 따라 photowltage의 부호가 반전 되었다. 이러한 현상은 SnO2- Sb S 사이에서 n-n heterojunction이, Sb S Sn사이에서 schottky junction이 형성되기 때문인 것으로 여겨진다.