• 한국인쇄학회지
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• 제22권2호
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• pp.151-162
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• 2004

MnSb layers were grown on GaAs(100), (111)A and (111)B substrates by hot wall epitaxy under various growth conditions. Growth condition dependence of structural properties of the layers was examined. The growth direction and structural properties of MnSb/GaAs(100) depend on Sb source and substrate temperatures. The smooth MnSb(10.1)/GaAs(100) interface was obtained under the appropriate growth condition. On the other hand, MnSb(00.1) layers were grown on GaAs(111) substrates. The quality of the layers on (111)B was superior to that on GaAs(111)A, but degraded as in increasing Sb source temperature during the growth. The $Mn_2Sb$ domain was generated in the layers grown under conditions of low Sb source temperature and high substrate temperature on GaAs(111) substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• 한국광물학회지
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• 제9권2호
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• pp.93-101
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• 1996

Behavior of platinum group elements during crystallization within ore magma is of interest. In this study platinum is selected and its mineralogical and geochemical behavior in the presence of antimony and tellurium is investigated at 600$^{\circ}C$. High purity Pt, Sb, and Te are used as starting material and silica quartz tubings are as container. Rection products have been examined by use of ore microscope, X-ray diffractometer, electron microprobe analyser and micro-indentation hardness tester. stable phases at 600$^{\circ}C$ are platinum (Pt), Pt5Sb, Pt3Sb, PtSb, stumpflite (PtSb), geversite (PtSb), PtTe, Pt3Te4, Pt2Te3, moncheite (PtTe2), tellurantimony (Sb2Te3), and antimony (Sb). Geversite is the mineral showing the most significant extent of solid solution by up to 27 at% between Sb and Te elements. Isothermal section of 600$^{\circ}C$ is established in this study. It is noted that platinum cannot coexists with stumpflite or geversite under equilibrium condition, and stumpflite composition in equilibrium with geversite may be used as geothermometer.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

• 한국결정학회지
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• 제8권2호
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• pp.149-153
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• 1997

본 연구는 ZnO-Bi2O3-Co3O4-MnCo3-Cr2O3-Sb2O3를 기본 조성으로 하여 Sb2O3 첨가량(0-0.09mol%) 변화에 따른 grain size와 미세구조 특성을 고찰하고자 하였다. Sb2O3가 첨가되지 않은 조성은 이상 입자 성장에 의해 거대한 ZnO grain이 생성되었으며, Sb2O3를 첨가한 조성은 Zn7Sb2O12 spinel상 생성으로 입자 성장이 억제되어 이상입자 성장이 관찰되지 않았다. Sb2O3 첨가량 증가에 따라 ZnO grain size가 현격하게 감소하였으며 그 미세구조는 조밀하고 균일한 크기의 grain분포를 나타내었다.

• 한국재료학회지
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• 제18권2호
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• pp.61-64
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• 2008

Electrical optical switching and structural transformation of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ for crystallization was 120, 50 and 90 ns at 12 mW, respectively. $Sb_{65}Se_{35}$ was crystallized at $170^{\circ}C$. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than $10^4{\Omega}/{\gamma}$.

• Bulletin of the Korean Chemical Society
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• 제18권4호
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• pp.385-389
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• 1997

We report on the development of a new method to control the coverage of a metal film prepared with immersion method. An Sb species in solution adsorbed irreversibly at an open circuit potential (∼0.2 V) as an oxygenous Sb(Ⅲ) on a clean Au electrode, and the adsorbates showed voltammetric features in the potential range from 0.1 V to - 0.4 V. The full coverage of the Sb adsorbates was ∼0.45. On the contrary, the Sb species in solution did not adsorb at all on iodine-covered Au electrode surfaces, when the iodine coverages were more than 0.25. As the iodine coverage decreased below 0.25, however, the irreversible adsorption of Sb took place and the coverage of Sb increased accordingly. This electrochemical behavior has been interpreted as the penetration of the adsorbing Sb species in solution through open spaces among the iodine adlattices of coverages less than 0.25. With the manipulation of the iodine coverage, the controllable range of Sb coverage was from 0 to 0.45, i.e. the full coverage of Sb. In addition, the reversible deposition of Sb on an iodine-saturated Au electrode with voltammetric scan has been observed, which is contrasted with the adsorptive behavior of Sb on the clean Au electrode.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1794-1798
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• 2018

We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.

• 대한방사선기술학회지:방사선기술과학
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• 제36권1호
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• pp.39-47
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• 2013

본 연구의 목적은 방사선 조사 용적 내 포함되는 소장의 용적 감소를 위해 복부판(Belly board, 벨리보드)과 소장변위도구(Small Bowel Displacement Device, SBDD)를 사용한 직장암 환자에서 방사선 치료 영역 내 포함되는 소장의 용적과 비만도 와의 상관성을 보고, 비만지표의 적용을 통해 SBDD의 사용지표를 삼고자 한다. 실험은 2012년 1월부터 4월까지 수술 전 혹은 수술 후 벨리보드와 SBDD를 사용해 골반부위에 방사선치료를 받은 29명의 직장암 환자를 대상으로 분석하였다. 방사선 치료는 3문 조사로 시행하였으며 1.8 Gy의 분할선량으로 중심점에 45 Gy를 조사한 계획만을 분석하였다. 환자의 키, 몸무게, 체질량지수(body mass index, BMI), 허리 엉덩이 둘레비(waist hip ratio, WHR)를 측정하여 비만도를 조사하였다. 조사되는 선량의 90%이상 들어가는 소장의 용적(high dose volume of small bowel, $HDV_{sb}$)과 33%이상 들어가는 소장의 용적(low dose volume of small bowel, $LDV_{sb}$)을 방광의 총 용적(total volume of bladder, $TV_{bladder}$) 및 비만도에 따라 비교하여 그 상관관계를 통계학적으로 분석하였다. 분석결과 수술여부 및 성별 WHR은 $HDV_{sb}$, $LDV_{sb}$에 크게 미치는 영향이 없었고 $HDV_{sb}$, $LDV_{sb}$와 BMI(p=0.031/0.083), $TV_{bladder}$ (p<0.05)는 통계적으로 유의하였다. BMI가 $HDV_{sb}$와는 유의 하지만 $LDV_{sb}$와는 크게 유의하지 않았다. (p=0.031, p>0.05) BMI는 $HDV_{sb}$와 음의 상관관계(${\beta}$=-0.402)가 있었으며 $TV_{bladder}$는 $HDV_{sb}$, $LDV_{sb}$와 음의 상관관계(${\beta}$=-0.497/-0.522)가 있었다. 특히 BMI 23 미만인 경우(BMI Group2)보다 그 이상인 경우 $HDV_{sb}$에 영향을 미치며 음의 상관성(${\beta}$=-0.525)이 있었다.($LDV_{sb}$, $HDV_{sb}$와 유의확률 각각 p=0.059, p=0.027) BMI가 23 이상인 집단(BMI Group1)에서는 $TV_{bladder}$와 $HDV_{sb}$, $LDV_{sb}$가 통계학적으로 유의하였고(p<0.04) 음의 상관성을 보였다. 비만지표인 BMI가 23 이상인 과체중 및 비만군의 직장암 방사선 치료 시 벨리보드와 SBDD를 동시에 사용하는 경우 조사용적 내 포함되는 소장의 용적을 감소시키는데 더 효과적이었다. 그러므로 벨리보드를 사용하는 직장암의 방사선 치료 시 BMI 23 이상인 한국인 환자에게는 소장변위도구를 동시에 사용 할 것을 권장한다.