• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1767-1775
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• 2003

The SAW device is extensively used as a electro$.$mechanical band­pass filter in which a two­pairs of interdigital transducers are provided over the surface of the piezoelectric substrate. For the design requirement, the central frequency and the bandwidth of the passband, and the attenuation level of the stopband region are specified. The configuration is made so as to satisfy the specification given. The central frequency is mainly determined by the distance between the pair of the finger electrodes. The design is considered as an optimization problem with which the error norm, the distance between the desired characteristics and the calculated for a given model is to be minimized. The delta function model and the electrical equivalent circuit model are utilized to represent the SAW filter characteristics. Genetic algorithm is used for optimization in which apodization of the transducer fingers is chosen as a design variable.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1962-1964
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• 1999

Effect of IDT structures on the frequency response of the SAW device are investigated. Various types of IDTs, such as MSC(multistrip-coupler), double split, reflector, and ground line. are designed and patterned on the widely used Y-Z cut LN$(LiNbO_3)$ substrate. Center frequencies, band widths, and insertion losses are measured and compared. Invalidity of the conventional model based on the impulse response model is also discussed.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.408-412
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• 2012

An in-line dispersive delay line (DDL) demands low and controllable reflectivity of the reflectors, especially if the surface acoustic wave (SAW) propagates all the way along the reflecting structure. The metal reflectors are usually too strong and introduce too much attenuation in such a device. The proposed solution of this problem is to spatially separate the acoustic channels for different frequencies with the help of Fan-shaped Transducers (FIDT) and to use narrow open metal reflectors to reduce reflectivity. Special arrangement of FIDT is performed to use 180-deg. reflection of the SAW. Narrow open metal strips with a metallisation ratio of the order of 20% are used as reflectors with small and controllable reflectivity. Reflectivity of such strips is estimated both theoretically and experimentally. Experimental performance of the proposed DDL is presented.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.257-262
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• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.373-375
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• 1995

In this part a new window function is used to design a SAW band pass filter. As an example, we selected a 99.9 MHz 20-percent bandwidth 20-dB insertion loss filter and fabricated a device on 128$^{\circ}$ X-rotated $LiNbO_3$. The theoretical predictions of a design sample are compared with the experimental data and are shown to be in good agreement over the operating range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.932-934
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• 2004

Due to the increasing variety and capacity of information and communication media, systems of microwave band communication have branched out extensively. Surface acoustic wave (SAW) devices fabricated FeSiB thin films on quartz substrate were deposited by RF magnetron sputter and by photolithographic processes. This device is with a center frequency 146MHz and the insertion loss as low as -43dB was obtained.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.53-60
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• 2003

CCD(Charge-Coupled Device) wafers, with a layer of micro lenses on top, usually are not passivated with dielectric films. Micro lenses, in general, are made of polymer material, which usually has a large affinity for particles generated in the various chip fabrication processes, most notably the wafer sawing for chip-dicing. The particles deposited on the micro lens layer either seriously attenuate or deflect the incoming light and often lead to CCD failure. In this study we introduce new type of saws which would significantly reduce the particle-related problems found in conventional type of saws. In the new saws, the positions and diverging angles of side and center nozzles have been optimized so as to flush the particles effectively. In addition, an independent nozzle is added for the sole purpose of flushing the generated particles. The test results show that, with the new saws. the ratio of the particle-related CCD chip failures has been dropped drastically from 9.1% to 0.63%.

• Korean Journal of Optics and Photonics
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• v.11 no.6
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• pp.423-428
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• 2000

We have demonstrated a -8 dB additional reduction in the intensity sidelobe of an apodized-interaction-strength guide-wave acousto-optic filter with a center passband of 1551.6 nm. Acoustic-intensity weighting was achieved by launching a surface acoustic wave (SAW) beam in a straight acoustic waveguide, and gradually transferring this SAW intensity to the active device, and back out, by evanescent-wave coupling across a 50 !lm barrier over a 19 rom interaction length. The intensity sidelobe was -4.27 dB for an unapodized filter with abmpt onset and cutoff of the interaction, but sidelobes were reduced to at most -12.68 dB for a SAW intensity with raised-cosine weighting. The RF driving power was 17.78 mW. A linear tuning rate of 8.86 nmIMHz and a spectral width of -1.7 nm were demonstrated. rated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.273-273
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• 2008

This paper describes the frequency response of two-port surface acoustic wave (SAW) resonator made of 002-polycrystalline aluminum nitride (AlN) thin film on 111-poly 3C-SiC buffer layer. In there, Polycrystalline AlN thin films were deposited on polycrystalline 3C-SiC buffer layer by pulsed reactive magnetron sputtering system, the polycrystalline 3C-SiC was grown on $SiO_2$/Si sample by CVD. The obtained results such as the temperature coefficient of frequency (TCF) of the device is about from 15.9 to 18.5 ppm/$^{\circ}C$, the change in resonance frequency is approximately linear (30-$150^{\circ}C$), which resonance frequency of AlN/3C-SiC structure has high temperature stability. The characteristics of AlN thin films grown on 3C-SiC buffer layer are also evaluated by using the XRD, and AFM images.

• The Journal of the Acoustical Society of Korea
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• v.20 no.3
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• pp.83-90
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• 2001

Conventional SAW duplexer filters employ a 1/4 wavelength transmission line, which causes difficulty in fabrication of the strip line on the package. Its manufacturing process is also complicated, because it needs integrating process of the separate transmitting filter, receiving filter and isolation circuits. This paper concerns development of a new structure of the duplexer filter that has all the transmitting filter, the receiving filter and the isolation circuit as a one chip device. For composition of the duplexer, we design the component SAW ladder filters and the isolation network consisting of lumped inductor and capacitor elements. Performance of the whole duplexer is optimized by the nonlinear multivariable minimization of a proper target function, and the result is compared with that of commercial filters.