• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.242-245
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• 1996

The microstructure of $Ba (Zn_{1/3}Ta_{2/3})O_3$ (BZT) was investigated using X-ray diffractometry(XRD) and transmission electron microscopy (TEM). $Ba_{0.5}TaO_3$ and $Ba_3TaO_{5.5}$ (BT) phasses were observed on the surface of the sintered specimen by XRD. Furthermore, a new type of ordering along the [110] direction was found in sintered specimen by the XRD and TEM analysis. The wavelength of ordering was 0.9 nm which is three times larger than the interplanar distance of (110) plane and new type of ordering is considered to be a result of Zn vacancy ordering. The creation of Zn vacancies and formation of BT phases are attributed to the evaporation of volatile ZnO. A new mechanism for ZnO loss is suggested. In this mechanism, only Zn vacancies are created only when the amount of ZnO loss is small and as the amount of ZnO loss increases, BT phases are formed at the same time. A new unit cell of ordered structure is suggested as the superlattics containing three BZT unit cells.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.139-143
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• 1997

The photoluminescence characteristics of the zinc gallate have been investigated as a function of the composition and the firing atmosphere. Two distinct emission bands were observed whose peaks are 360 nm and 430 nm respectively. These emission bands are considered to be from two different emission centers. For $ZnO/Ga_2O_3$=49.3/50.7 or higher, 430 nm band is predominant and for $ZnO/Ga_2O_3$=49.2/50.8 or lower, 360nm band becomes predominant, whereas 430 nm band is almost completely suppressed. The shift of emission peak is though to be due to the change of the cation distribution with the zinc content in the spinel zinc gallate. Also, the emission centers responsible for the 360nm band are considered to be more efficient energy absorbers than the ones for the 430 nm band. Highly efficient green emitting phosphor was obtained by activating Zn-deficient zinc gallate with manganeses.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.157-161
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• 2007

Line width under $100\;{\mu}m$ with good resolution is difficult to achieve using conventional thick-film process utilizing screen printing method. However combined with lithography technology finer line and space for miniaturization and highly integrated package is achievable. In this study, photosensitive Ag paste of optimum formulation used for thick film lithography technology was fabricated by various Ag powder, glass powder and additives. As the result, line width of $30\;{\mu}m$ with good definition and reduced mismatch during co-firing with LTCC substrate was acquired. Formulated Ag paste was used to pattern embedded fine line inductor with over 90% yield.

• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.173-178
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• 2006

Silica aerogel with ultra low density and high porosity has been focused on versatile application due to its fascinating properties. Ambient drying process of waterglass, in this study was researched to fabricate a crack-free monolith body in the point view of cost effective way. Wet gel was obtained by removing of $Na^{+}$ ions in waterglass, which contains 8 wt% of $SiO_{2}$. Xylene, which has a low vapor pressure, was used as a solution substitutor to prevent the formation a cracks during drying. Various surface modifiers like as hexamethyldisilazane (HMDSZ), trimethylchlorosilane (TMCS), methyltriethoxylsilane (MTES), methyltrimethoxysilane (MTMS) and phenyltriethoxysilane (PTES) were used in order to improve hydrophobicity of the waterglass Silica aerogel. Some physical properties of the surface modified aerogels were investigated by FT-IR, TGA, BET and SEM. Hydrophobicity and hydrophilicity of Silica aerogel is attributed to the Si-OH bond and the non-polar C-H bond groups on the surface of aerogel. Crack-free waterglass aerogel with >90 % of porosity, 17 nm of pore size and <0.15 $g/cm^{3}$ of density was prepared. HMDSZ and TMCS are effective as a surface modifier

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.935-940
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• 2009

In this research, the composites (100-x)LCP-xBNT (x = 0, 10, 20, 30, 40 vol.%) were fabricated with thermoplastic LCP(Liquid Crystal Polymer) and BNT($BaNd_2Ti_4O_{12}$) which is a high frequency dielectric material. Their dielectric properties, mechanical strength and microstructure were investigated by Impedance analyser, Instron and SEM. In order to fabricate LCP-BNT composites, LCP resin was put into the twin screw type mixer($310^{\circ}C$), melted by keeping for 10 min. After that, BNT filler was dispersed with melted LCP resin for 15 min. in the mixer. For measuring the dielectric properties and mechanical strength, Composite specimens were made by pressing composite granule (LCP-BNT) with 7 ton in the mold at $310^{\circ}C$. With increasing the BNT content (0~40 vol.%) of the composite, Its dielectric constant increased, dielectric loss and flexural strength decreased. The dielectric constant and flexural strength of composites with 20~30 vol.% of BNT filler are 4.1~6.0 and 35~55 MPa respectively. BNT/LCP composite is the potential substrate material for the high frequency application.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.222-225
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• 2011

Lead zirconate titanate (PZT) films were fabricated on Pt/Ti/$SiO_2$/Si substrate by the sol-gel method using a sol containing poly(N-vinylpyrrolidone) (PVP). PVP in alkoxide solutions can suppress the condensation reaction in gel films during heat treatment, and increase the viscosity of alkoxide solutions. Single-phase PZT films as thick as 1 ${\mu}m$ were deposited by repetitive coating with successive third-step heat treatments at 150$^{\circ}C$, 350$^{\circ}C$ and 650$^{\circ}C$. After heat treatment, the films were crack free, and optically transparent. As a result, we demonstrated a PZT film with a PVP molar ratio of 0.5, which has a permittivity of 734, a dielectric loss of 0.042, a $P_r$ of 40.5 ${\mu}C/cm^2$ and an $E_c$ of 156 kV/cm.

• The Korean Journal of Pain
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• v.25 no.4
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• pp.258-261
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• 2012

Posterior neck pain is a common complaint of patients in the pain clinic. The atlas (C1) burst fracture is known to be a cause of posterior neck pain and instability. Although the atlas burst fracture and instability can be discovered by plain X-rays which show lateral mass displacement or widening of the atlantodental interval, assessment of an atlas burst fracture can be difficult if there is no instability in the imaging study. Here we report a case of a 46-year-old female patient who had complained of sustained posterior neck pain for 6 months. Plain X-rays showed only disc space narrowing at C4/5 and C5/6, without any cervical instability. However, an unrecognized C1 lateral mass fracture was detected by CT and MRI. The patient's pain was then successfully treated after atlantoaxial joint injection with a C2 DRG block.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.245-248
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• 1997

Photoluminescence (PL) and cathodoluminescence (CL) characteristics of Ce-activated $Y_{2-x}Ce_xSiO_5$ have been investigated as functions of Ce concentration and firing condition. According to the X-ray, PL and CL results, $Y_2SiO_5$ is found to have two phases depending on the firing temperature. For the specimen fired above 127$0^{\circ}C$, the emission band peaked at 395nm with a shoulder at 424 nm under ultraviolet (u.v.) and cathode-ray (c.r.) excitation. However, for the specimen fired below 120$0^{\circ}C$ in air the peak was observed at 424 nm and it shifted to longer wavelength with reduction level. The reduced specimen for x=0.02 showed the brightest emission under u.v. excitation whereas under c.r. excitation the brightest emission was observed for the reduced specimen for x=0.06.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.757-763
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• 1998

The effect of {{{{ {Ga }^{3+ } }} addition on the photoluminescence and cathodoluminescence of {{{{ {SrTiO}_{3 } }}:{{{{ { Pr}^{3+ } }} was stu-died by performing the excitation emission and decay time measurements. Addition of {{{{ {Ga }^{3+ } }} in {{{{ {SrTiO}_{3 } }}:{{{{ { Pr}^{3+ } }} resulted in a considerable enhancement of {{{{ { Pr}^{3+ } }} emission intensity. From the analysis of the experimental results the following mechanism is proposed. Excitation in the {{{{ {SrTiO}_{3 } }} host lattice leads to the formation of electrons in the conduction band and holes in the valence band. The electrons in the conduction band re-combine radiatively with the holes trapped at {{{{ { Ga}^{3+ } }} and the energy is transferred to {{{{ { Pr}^{3+ } }} ion which give its own characteristic red emission.

• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.255-259
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• 1999

The effects of $SiO_2$ and MnO addition on the sinterability and the electrical properties of 0.4mol% Nb-doped SrTiO3 varistor were investigated. The $SiO_2$ content was fixed at 0.3mol% and the MnO content varied from 0 to 1.0mol%. With 0.3 mol% $SiO_2$ and 0.3 mol% MnO addition, optimum density was obtained by sintering at $1200^{\circ}C$ without excess liquid phase. Impedance spectroscopy was performed on the sintered specimens with 0.3 mol% $SiO_2$ and various MnO contents. It was found that the resistivities of grains was increased with increasing MnO content. The dielectric constant was measured to be above 50000 in the specimen with 0.3~1.0mol% Mn content. The non-linear coefficient increased substantially with MnO addition, and it varied from 1 to 9 depending on the MnO content.