• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.177.2-177.2
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• 2011

폐기물 합성가스에 포함되어 있는 오염물질 중 황화합물($H_2S$, COS)이 존재할 경우, 다른 연계 공정을 구성하는 설비의 부식, 합성가스 이용 공정의 촉매 피독 문제, 대기 배출시 환경오염 문제 등을 야기 시키므로 제거가 필요하다. 고온 정제 공정을 적용하여 황화합물을 제거하기위해 산화아연을 이용한 고온 탈황 실험을 수행하였다. 고정층 반응기에 탈황제로 선정한 산화아연을 충진하고, 공간속도 $3,000h^{-1}$, 입구 황화합물의 농도 $H_2S$ 1,000ppm, COS 300ppm일 때 반응 온도 변화에 따른 탈황특성을 살펴보았다. 가스 내부에 $H_2S$가 단독으로 존재할 경우에는 $400^{\circ}C$ 이상에서 모두 제거되었으나, $H_2S$와 COS가 동시에 존재할 경우에는 $450^{\circ}C$ 이상에서 모두 제거되는 것을 알 수 있었다. 반응온도 $500^{\circ}C$에서 산화아연 탈황제를 이용한 실험결과 $H_2S$, COS의 파과시간은 각각 1,217, 1,063 min, 흡착능력은 269.9 mg-$H_2S$/g-sorbent, 124.7 mg-COS/g-sorbent으로 파악되었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.4
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• pp.62-66
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• 1989

$Bi_2S_3$ polycrystalline and $Bi_2S_3$ amorphous thin tilm were grown by the evaporation method. The measured lattic parameters were $a=1.708{\AA},\;b=0.351{\AA},\;and\;C=3.943{\AA}$ at substrate temperature $210^{cric}C$ were shown to have the orthorhombic structure. The energy gape of $Bi_2S_3$ polycrystalline that was made from thin film were measured to be 1.375eV at $289^{cric}K.$ The optical band gap of $Bi_2S_3$ amorphous thin film was measured to be 1.71eV at $289^{cric}K.$ It was supposed to mechanism that a photon absorption was changed at the center of 674nm (1.84eV)

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2018.05a
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• pp.45-46
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• 2018

S2 module, which is one of the Korean type e-Navigation services, is a service concept that monitors the situation onboard and provides an emergency level determination and response guidance to the ship when an alarm occurs. S2 module is divided into fire/ seakeeping / navigation safety sub-module. In this paper, the concept of S2 service based on actual ship is explained through the response guidance case study of navigation safety module in case of abnormal condition in the passenger ship H.

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.445-449
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• 2018

Chromium plating is a common surface treatment technique extensively applied in industry due its excellent properties which include substantial hardness, abrasion resistance, corrosion resistance, surface color, and luster. In this study, the effect of $MoS_2$ particles of the composite coating was investigated. To improve the lubrication of mold, $Cr-P-C/MoS_2$ composite plating was studied by varying the $MoS_2$ content. The current efficiency of the composite plating incorporated $MoS_2$ particles was increased at $MoS_2$ contents of 0.5 and 1.0 g/l due to the incorporation of fine particles. On the other hand, when the content of $MoS_2$ is 1.0 g/l or more, the current efficiency is lowered due to an increase in impact on the cathode surface. In order to evaluate the mechanical properties of Scratch test were conducted. Scratch test confirmed the lubricity and abrasion resistance characteristics revealed that the composite plating with added $MoS_2$ had relatively low surface roughness and uniform surface modification to improve its properties.

• Corrosion Science and Technology
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• v.15 no.3
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• pp.125-128
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• 2016

The ASTM T92 steel was corroded at $600^{\circ}C$ and $800^{\circ}C$ at 1 atm of $N_2/3.1%H_2O/2.42%H_2S-mixed$ gas. The formed scales were thick and fragile. They consisted primarily of the outer FeS scale and the inner (FeS, $FeCr_2S_4$)-mixed scale containing a small amount of the $Cr_2O_3$ scale. This indicated that corrosion occurred mainly via sulfidation rather than oxidation due to the $H_2S$ gas. Since FeS was present throughout the whole scale, T92 steel was non-protective, displaying high corrosion rates.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• Journal of the Korean Ceramic Society
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• v.24 no.5
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• pp.453-460
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• 1987

β'-sialon(Z=2.7) specimens with <30%wt. graphite as a reducing agent were decomposed at 1350°up to 1,450℃ under the atmosphere of 90% N2-10%H2. The decomposition of β'-sialon was calculated from the change in Z-value, and the formation of new minerals was identified from X-ray diffraction patterns. The decomposition reactions of sialon were considered to yield a stable sialon close to β-silicon nitride and some aluminum compounds according to the following equations; β'-sialon(s)＋C(s)＋N2(g)→β2-sialon(metastable)＋β3-sialon(stalbe phase) β2-sialon(s)＋C(s)＋N2(g)→β3-sialon(s)＋AlN(s)＋α-Al2O3(s)＋15R(s)＋SiO(g)＋Al2O(g)＋CO(g) Z-value; β2( 3.5)>β'( 2.7)>β3( 0.5) The decomposition rate of sialon was controlled by two mechanisms ; One was characterized by the interface area of contact, corresponding to an apparent activation energy of 50.5Kcal/mol in the initial stage, and the other by the diffusion, corresponding to that of 104.3Kcal/mol in the final stage of the decomposition.

• Communications of the Korean Mathematical Society
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• v.35 no.2
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• pp.371-399
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• 2020

Let P_s := 𝔽₂[x₁, x₂, …, x_s] = ⊕_n⩾0(P_s)_n be the polynomial algebra viewed as a graded left module over the mod 2 Steenrod algebra, ${\mathfrak{A}}$. The grading is by the degree of the homogeneous terms (P_s)_n of degree n in the variables x₁, x₂, …, x_s of grading 1. We are interested in the hit problem, set up by F. P. Peterson, of finding a minimal system of generators for ${\mathfrak{A}}$-module P_s. Equivalently, we want to find a basis for the 𝔽₂-graded vector space ${\mathbb{F}}_2{\otimes}_{\mathfrak{A}}$ P_s. In this paper, we study the hit problem in the case s = 5 and the degree n = 5(2^t - 1) + 6 · 2^t with t an arbitrary positive integer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.3-7
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• 2004

$HgGa_2S_4:CO^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. 1n the optical absorption spectrum of the $HgGa_2S_4:CO^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

• Journal of the Korean Ceramic Society
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• v.21 no.2
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• pp.113-120
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• 1984

In this study a comparative investigation for the effect of $K_2SO_4$ and $CaSO_4$ on the decomposition of $C_3S$ was made. When pure $C_3S$ which was synthesized in the laboratory was mixed with $K_2SO_4$ and oxides such as MgO $Al_2O_3$ and $Fe_2O_3$ and then reburned at the temperature range between 135$0^{\circ}C$ and 145$0^{\circ}C$ no decompo-sition occurred, But when $CaSO_4$ and $Fe_2O_3$ were added to $C_3S$ and then reburned at below 130$0^{\circ}C$ $C_3S$ was partly decomposed to $C_2S$and CaO composing $2C_2S$.$CaSO_4$ When $CaSO_4$ and $Al_2O_3$were added $C_3S$ was entirely decomposed to $C_2S$ and CaO at 1300~140$0^{\circ}C$ but it was not decomposed at 145$0^{\circ}C$.