• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.508-516
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• 1992

In this study, dielectric and piezoelectric properties of 0.05Pb(AlS12/3TWS11/3T)OS13T-0.95Pb(ZrS10.52TTiS10.48T)OS13T system ceramics were investigated with respect to the variations of MnOS12T and FeS12TOS13T additions amounts. The results obtained in this study are summarized as follows: 1. As the amounts of MnOS12T and FeS12TOS13T are increased, tetragonality(c/a) and apparent density were decreased but grain size was increased, also the limits of solubility were revealed because pores were formed at the amounts of 0.3wt% MnOS12T and 0.5wt% FeS12TOS13T. 2. AS the increasing of amounts of MnOS12T and FeS12TOS13T, the temperature of phase transition(TS1cT) was decreased, and pemeability had maximum value at the amount of 0.3wt% MnOS12T but were sharply decreasd for the increasing FeS12TOS13T amounts. 3. As the amounts of MnOS12T and FeS12TOS13T are increased, the electro-mechanical coupling factor(kS1pT) was decreased from 60% to 41%, 19% respectively, but mechanical quality factor(QS1mT) had maximum values 720 for amount of 0.3wt% MnOS12T and 320 the amount of 0.5wt% FeS12TOS13T.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.858-868
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• 1992

0.085Ba(LaS11/2TNbS11/2T)OS13T-0.915Pb(ZrS1yTTiS11-yT)OS13T (0.45$\leq$y$\leq$0.65) transparent electrooptic ceramics were fabricated by two-stage sintering method. The structural, ferroelectric and electrooptic properties were investigated varying composition and second sintering time. Also the possibility of application to electrooptic device was studied. If we increase the PbZrOS13T contents, dielectric constants were increased and Curie temperature was decreased. In the composition of 0.55[mol] PbZrOS13T, electromechanical coupling factor and piezoelectric charge constant were the highest values of 43[%] and 173x10S0-12T[C/N], respectively. Mechanical quality factors were decreased with the increasing PbZrOS13T contents. Light transmittance was increased with wavelength when measured from 300[nm] to 900[nm], and with PbZrOS13T contents in the range of 0.50[mol]-0.65[mol], and had the highest value of 67[%] in the composition of 0.65[mol] PbZrOS13T. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the specimens with compositions of 0.65,0.60,0.55[mol] PbZrOS13T were applicable to electrooptic memory device and those with compositions of 0.50,0.45[mol] PbZrOS13T were applicable to linear electrooptic device.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.613-619
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• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.517-524
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• 1992

In this study, 0.10Pb(SbS11/2TSnS11/2T)OS13T-(0.90-x)PbZrOS13T (0.25 x 0.40) ceramics were fabricated by the atmospheric method. The sintering temperature and time were 1250[$^{\circ}C$] and 2[2hr], respectively. The structureal, dielectric and piezoelectric properties with composition of PbTiOS13T were studied. As the results of XRD ans SEM, the crystal structure of a specimen was rhombohedral, lattice constant and average grain size were decreased with increasing the contents of PbTiOS13T. Relative dielectric constant and Curie temperature were increased with increasing the contents of PbTiOS13T, 0.10PSS-0.40PT-0.50PZ specimen had the highest values of 904 and 265[$^{\circ}C$], respectively. In increasing of PbTiOS13T contents form 25[mol%] to 40[mol%], piezoelectric charge constant and electromechanical coupling factors were increased form 114[pC/N] to 142[pC/N], 17[%] to 24[%] and mechanical quality factor were decreased with increasing the contents of PbTiOS13T. In the 0.10PSS-0.40PT-0.50PZ specimens, those values were 14.2[kV/cm] and 9.43[x10S0-6TC/cmS02T], resectively.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.502-507
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• 1992

To improve temperature stability, 0.05Pb(SnS11/2TSbS11/2T)OS13T-0.35PbTiOS13T-0.60PbZrOS13T+0.4[wt%]MnO S12T piezoelectic ceramics were manufactured with the addition of CrS12TOS13T by Hot Press method. And the SAW delay line was fabricated and effects of CrS12TOS13T to the propagation characteristics of SAW was investigated, and the SAW filter was fabricated on C4 specimen added by 0.2[wt%] CrS12TOS13T whose propagation characteriatics of surface acoustic wave were the bast and its frequency characteristics was investigated. Electromechancal coupling factor(kS1sTS02T) was 3.11[%] and its temperature coefficient of the center frequency(CS1foT)was -21.27[ppm/$^{\circ}C$] in C4. The 31[MHz]]SAW IF filter of C4 scarcely had diffraction phenomena and therefore it was proper.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.687-693
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• 1992

To improve dielectric, piezoelectric and temperature stability in 0.50Pb(SnS11/2TSbS11/2T)OS13T - 0.35PbTiOS13T - 0.60PbZrOS13T + 0.4[wt%]MnOS12T piezoelectric ceramics which is used for surface acoustic wave devices, CrS12TOS13T was added and the specimens were fabricated by Hot Press method, and their characteristics were measured with CrS12TOS13T addition. From the results, in the specimen added by 0.2[wt%]CrS12TOS13T, dielectric constant and mechanical quality factor were 380 and 2307, respectively, and it was suited for surface acoustic wave device and the temperature coefficient of the resonant frequency in the specimen added by 0.4[wt%]CrS12TOS13T was the least value of 74.96[ppm/$^{\circ}C$].

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.253-260
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• 1992

In this study, the dielectric, structural and electrical properties of Pb(ZnS11/3TNbS12/3T)OS13T-BaTiOS13T-PbTiOS13T system ceramics were investigated with respect to the variation of YS12TOS13T addition amount. As the YS12TOS13T addition amount is increased, the resistivity at 100$^{\circ}C$ and the resonant/antiresonant frequencies and the frequency constant are slowly increased, and the grain growth is restrained until 0.4 wt% YS12TOS13T addition amount but continuously increased with the addition amount more than 0.4 wt% YS12TOS13T. As the YS12TOS13T addition amount is increased, the density, the diffuseness of dielectric constant and the induced polarization are increased until 0.4 wt% YS12TOS13T addition.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.789-794
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• 1994

In this study, the structural and microwave dilelectric properties of 0.15BaO-0.15SmS12TOSI3T-0.7TiOS12T ceramics with sintering and annealing conditions were investigated. In the specimen sintered at 1350 [$^{\circ}C$], dielectric constant and quality factor were good values of 80.19,2006 (fS10T=4.6851[GHz]). To improve the $\tau$S1fT of specimen which was manufactured by the optimumsintering condition (1350[$^{\circ}C$],2[Hr.]), annealed from 2[hr.] to 16[hr.] at the annealing temperature of 1200 [$^{\circ}C$]. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. In the specimen of 4[hr.] annealed, the temperature coefficient of resonant frequency was minimum value, and increased with increasing the annealing time.

• Journal of the Korean Mathematical Society
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• v.41 no.2
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• pp.265-294
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• 2004

In this paper, using a simple formula, we evaluate the conditional Fourier-Feynman transforms and the conditional convolution products of cylinder type functions, and show that the conditional Fourier-Feynman transform of the conditional convolution product is expressed as a product of the conditional Fourier-Feynman transforms. Also, we evaluate the conditional Fourier-Feynman transforms of the functions of the forms exp {$\int_{O}^{T}$ $\theta$(s,$\chi$(s))ds}, exp{$\int_{O}^{T}$ $\theta$(s,$\chi$(s))ds}$\Phi$($\chi$(T)), exp{$\int_{O}^{T}$ $\theta$(s,$\chi$(s))d${\zeta}$(s)}, exp{$\int_{O}^{T}$ $\theta$(s,$\chi$(s))d${\zeta}$(s)}$\Phi$($\chi$(T)) which are of interest in Feynman integration theories and quantum mechanics.