• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2223-2226
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• 2009

Pristine and sulfur-doped (LiFe$PO_{3.98}S_{0.03}$) lithium iron phosphates were synthesized by a sol-gel method. The XRD pattern of the prepared materials suggested an orthorhombic structure with a Pnma space group and an absence of impurities. The Li/LiFe$PO_4$ or LiFe$PO_{3.98}S_{0.03}$ cells were employed for cycling studies at various temperatures (25, 50 and $60\;{^{\circ}C}$). In all cases, the Li/LiFe$PO_{3.98}S_{0.03}$ cell showed an improved performance with a stable discharge behavior of ~155 mA$hg^{-1}$. Nevertheless, pristine LiFeP$O_4$ cells presented poor discharge behavior at elevated temperatures, especially $60\;{^{\circ}C}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.91-95
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• 1999

PED용 형광체로 사용되는 ZnCa$_2$O$_4$를 Clycine Nitrate Process로 합성하여 고상 반응법으로 합성한 ZnCa$_2$O$_4$ 분말과 비교 분석하였다. 또한 Glycine Nitrate Process로 제조시 Mn의 doping 농도를 변화시키면서 각각의 조성비에 따른 발광특성을 알아보았다. TGA 측정 결과 GNP법으로 합성된 ZnCa$_2$O$_4$ 의 경우 약 40$0^{\circ}C$ 이상에서 무게감량의 변화가 없었으며, XRD 상분석 결과 연소반응 후 이미 상형성이 이루어짐을 알 수 있었다. PL측정을 결과 GNP(GIycine Nitrate Process)로 제조된 ZnCa$_2$O$_4$분말의 발광효율이 고상 반응법으로 제조된 분말보다 우수하였으며, 균일하고 비표면적이 큰 단일상임이 관찰되었고, 더 작은 에너지와 시간으로 제조할 수 있는 장점이 있었다

• Journal of Magnetics
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• v.12 no.3
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• pp.103-107
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• 2007

Magnetic field induced structural transition has been systematically investigated for $La_{1-x}Ba_xMnO_3$ with the fine control of carrier doping $(0.15{\leq}x{\leq}0.20)$. Application of a magnetic field results in the suppression of the rhombohedral-orthorhombic transition temperature $(T_s)$ and the increase of insulator-metal transition temperature $(T_{MI})$. Near x = 0.17, where $T_S$ is similar to $T_{MI}$ at zero magnetic field, we found that the $T_S$ smoothly decreased with magnetic field even though it intersected the $T_{MI}$ near 3 T. Also, the magnetostructural phase diagram obtained from the temperature sweep and from the magnetic field sweep is not significantly modified. By comparing the magnetostructural transition in $La_{1-x}Sr_xMnO_3$, we have suggested that the large disorder originated from ionic size differences between La and Ba may weaken the sensitivity of the kinetic energy of $e_g$ electrons on the degree of lattice distortion in $La_{1-x}Ba_xMnO_3$.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1445-1453
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• 2013

$Zn_{(1-x)}Ni_xAl_2O_4$ (x = 0.0-1.0) spinels were prepared at $800^{\circ}C$ by co-precipitation method and characterized by infrared spectroscopy, X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The specific surface area was determined by BET. SEM image showed nano sized spherical particles. XPS confirmed the valence states of the metals, showing moderate Lewis character for the surface of materials. The powders were successfully used as new heterogeneous catalysts of Biginelli's reaction, a one-pot three-component reaction, leading to some dihydropyrimidinones (DHPMs). These new catalysts that produced good yields of DHPMs, were easily recovered by simple filtration and subsequently reused with persistent activity, and they are non-toxic and environmentally friendly. The optimum amount of catalyst is 20% by weight of benzaldehyde derivatives, while the doping amount has been found optimal for x = 0.1.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.432-437
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• 2000

Thermoelectric properties of p-type SiGe alloys prepared by a RF inductive furnace were investigated. Non-doped Si80Ge20 alloys were fabricated by control of the quantity of volatile Ge. The carrier of p-type SiGe alloy was controlled by B-doping. B doped p-type SiGe alloys were synthesized by melting the mixture of Ge and Si containing B. The effects of sintering/annealing conditions and compaction pressure on thermoelectric properties (electrical conductivity and Seebeck coefficient) were investigated. For nondoped SiGe alloys, electrical conductivity increased with increasing temperatures and Seebeck coefficient was measured negative showing a typical n-type semiconductivity. On the other hand, B-doped SiGe alloys exhibited positive Seebeck coefficient and their electrical conductivity decreased with increasing temperatures. Thermoelectric properties were more sensitive to compaction pressure than annealing time. The highest power factor obtained in this work was 8.89${\times}$10-6J/cm$.$K2$.$s for 1 at% B-doped SiGe alloy.

• Proceedings of the Korean Fiber Society Conference
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• 2003.04a
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• pp.36-39
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• 2003

Conducting polymers are finding increasing number of applications in various electronic devices such as chemical sensors, electrochromic display, light emitting diodes, etc. Polyaniline(PANI) ranks among highly prospective conduction polymers. PANI was first synthesis in 1862[1] and has been extensively studied as a conducting polymer since the 1980s[2]. The side range of electrical, electrochemical and optical properties coupled with good environmental stability makes PANI potentially attractive for application as an electronic material. (omitted)

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.1
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• pp.52-57
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• 2005

This paper describes a fabrication method of a circular diaphragm using boron etching stop method. It will be applied to acoustic transducers such as microphones or microspeakers and so on. The sensitivity is expected to be increased with the circular diaphragm through the simulation results to compare with a general rectangular diaphragm. The borondoped layer which is doped with solid source is sufficient for achieving an etching stop in 20 wt% TMAH, and the thickness is about $7.4{\mu}m$. The diameter of the circular silicon nitride diaphragm was measured to be 2 mm with $1{\mu}m$ thickness. The fabrication of piezoelectric acoustic devices was completed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.482-491
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• 2012

In the present work, comprehensive investigation of the ambipolar characteristics of two silicon (Si) tunnel field-effect transistor (TFET) architectures (i.e. p-i-n and p-n-p-n) has been carried out. The impact of architectural modifications such as heterogeneous gate (HG) dielectric, gate drain underlap (GDU) and asymmetric source/drain doping on the ambipolar behavior is quantified in terms of physical parameters proposed for ambipolarity characterization. Moreover, the impact on the miller capacitance is also taken into consideration since ambipolarity is directly related to reliable logic circuit operation and miller capacitance is related to circuit performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.183-183
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• 2009

본 연구에선 ITO에 사용되는 Indium의 양을 줄이기 위해 ITO와 유사한 성질을 보이는 조성인 Indium - Zinc - Tin Turnary compound를 연구하였다. 각 조성은 Indium - Zinc - Tin Turnary compound를 기본으로 하여 Zinc site에 이종원소인 Al2O3와 Ga2O3를 doping함에 따라 변화되는 전기적 특성을 살며보았다. 분석에 사용한 Ceramic pellet은 일반적인 Ceramic process를 거쳐 제작되었다. 각 조성의 전기적 특성은 TCR meter와 Hall effect analyser를 이용하여 측정하였고, X-ray diffraction measurements(XRD), Scanning Electron microscope(SEM)를 이용하여 결정학적 특성을 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.108-108
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• 2009

ITO에 사용되는 주된 재료인 인듐의 bixbyite 구조는 TCOs의 전기적 특성에서 매우 중요한 것으로 알려져 있다. 때문에 인듐의 Bixbyite구조를 유지하면서 인듐의 사용량을 줄이기 위해 최적의 Solubility limit에 관해 연구하였다. 이를 위해 In2O3-ZnO-SnO2의 삼성분계 기본 조성에 두가지 물질을 추가로 첨가하여 첨가량에 따른 Solubility limit을 연구하였다. Solubility limit의 측정을 위해 X-ray Diffractometer(XRD)를 사용하였으며, 첨가 원소의 양이 증가할수록 TCOs target의 Latice parameter값은 작아졌다, SEM을 통한 미세구조의 관찰로 원소첨가에 따른 샘플의 소결에너지 변화를 분석할 수 있었다. 제작된 시편의 정성분석 및 Chemical binding Energy를 측정하기 위해 X-ray Photo Spectroscopy (XPS)를 이용하였으며, 전기적인 특성 측정을위해 4-Point prove mesurement 방법을 사용하였다.