• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.557-562
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• 2012

Self-organized ruthenium (Ru) dots were fabricated by $400^{\circ}C$ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the $400^{\circ}C$ RTA conditions for 10, 30 and 60 seconds on all Si(100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates. Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si(100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < $20^{\circ}$ wetting angle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.56-61
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• 1999

Highly conductive oxide films of BaRuO$_3$ have been grown heteroepitaxially on (100) LaAlO$_3$ single crystalline substrates by using pulsed laser deposition. The films are c-axis oriented with an in-plane epitaxial relationship of <010><100>BaRuO$_3$ // <110>LaAlO$_3$. Atomic force microscopy (AFM) observation shows that they consist of a fine-arranged network of grains and have a mosaic microstructure. Generally temperature-dependent resistivity shows the transition from metallic curve to semiconductor-metallic twofold curve by the deposition conditions for Ru oxide based materials like SrRuO$_3$, CaRuO$_3$, BaRuO$_3$, etc.. This twofold curve comes from the structural similarity of Ru oxide based materials including BaRuO$_3$. We find that the distance of Ru-Ru bonding in the unit cell of BaRuO$_3$ as well as the grain boundary scattering could be the two important causes of these interesting conductive properties.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2689-2693
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• 2012

Single-walled carbon nanotubes (SWNTs) and $C_{60}$-encapsulated SWNTs ($C_{60}@SWNTs$) are introduced to Ru-sensitized photoelectrochemical cells (PECs), and photocurrents are compared between two cells, i.e., an $RuL_2(NCS)_2$/DAPV/SWNTs/ITO cell and an $RuL_2(NCS)_2$/DAPV/$C_{60}@SWNTs$/ITO cell. [L = 2,2'-bipyridine-4,4'-dicarboxylic acid, DAPV = di-(3-aminopropyl)-viologen, and ITO = indium-tin oxide] The photocurrents are increased by 70.6% in the presence of $C_{60}@SWNTs$. To explain the photocurrent increase, the reverse-field emission method is used, i.e., $RuL_2(NCS)_2$/DAPV/SWNTs/ITO cell (or $RuL_2(NCS)_2$/DAPV/$C_{60}@SWNTs$/ITO cell) as an anode and a counter electrode Pt as a cathode in the external electric field. The improved field emission properties, i.e., ${\beta}$ (field enhancement factor) and emission currents in the reverse-field emission with $C_{60}@SWNTs$ indicate the enhancement of the PEC electric field, which implies the improvement of the electron transfer rate along with the reduced charge recombination in the cell.

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.934-940
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• 2010

The reduction of [$Os_3(CO)_{11}P(OMe)_3$] and subsequent ionic coupling of the reduced species with $[Ru({\eta}^5-C_5H_5)(CH_3CN)_3]^+$ resulted in the formation of [$Os_3(CO)_{11}P(OMe)_3(Ru({\eta}^5-C_5H_5))_2$] which can be converted to spiked tetrahedral cluster, [$HOs_3(CO)_{11}P(OMe)_3Ru_2({\eta}^5-C_5H_5)(C_5H_4)$] via the intramolecular hydrogen transfer. Due to the unavailability of a suitable single crystal, the PW91/SDD and LDA/SDD density functional methods were used to predict possible structures and the available spectroscopic information (IR, NMR) of [$Os_3(CO)_{11}P(OMe)_3(Ru({\eta}^5-C_5H_5))_2$]. The most probable geometry found by constrained search is the isomer (a2) in which the phosphite, $P(OMe)_3$, occupies an axial position on one of the two osmium atoms that is edge bridged by the $Ru(CO)_2({\eta}^5-C_5H_5)$ unit. By using the most probably geometry, the predicted infrared frequencies and $^1H$, $^{13}C$ and $^{31}P$ NMR chemical shifts of the compound are in the same range as the experimental values. For this type of complex, the LDA/SDD method is appropriate for IR predictions whereas the OPBE/IGLO-II method is appropriate for NMR predictions. The activation energy and reaction energy of the intramolecular hydrogen transfer coupled with the structural change of the transition metal framework were estimated at the PW91/SDD level to be 110.32 and -0.14 kcal/mol respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.302-302
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• 2007

The $SrRuO_3$/Si thin film electrodes are grown with (00l) preferred orientations on SrO buffered-Si (001) substrates by pulsed laser deposition. The optimum conditions of SrO buffer layers for $SrRuO_3$ preferred orientations are the deposition temperature of $700^{\circ}C$, deposition pressure of $1\;{\times}\;10^{-6}\;Torr$, and the thickness of 6 nm. The 100nm thick-$SrRuO_3$ bottom electrodes deposited above $650^{\circ}C$ on SrO buffered-Si (001) substrates have a rms roughness of approximately $5.0\;{\AA}$ and a resistivity of 1700 -cm, exhibiting a (00l) relationship. The 100nm thick-$Pb(Zr_{0.2}Ti_{0.8})O_3$ thin films deposited at $575^{\circ}C$ have a (00l) preferred orientation and exhibit $2P_r$ of $40\;C/cm^2$, $E_c$ of 100 kV/cm, and leakage current of about $1\;{\times}\;10^{-7}\;A/cm^2$ at 1V.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.8-14
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• 1997

RuO$_{2}$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructue, surface roughness and resistivity are studied with various O$_{2}$/(Ar+O$_{2}$) ratios and substrate temperatures. As O$_{2}$/(Ar+O$_{2}$) ratio decreas and substrate temperature increases, the preferred growing plane of RuO$_{2}$ thin films are changed from (110) to (101) plane. With increase of the O$_{2}$/(Ar+O$_{2}$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_{2}$ thin films increase form 2.38nm to 7.81 nm, and from 103.6.mu..ohm.-cm to 227.mu..ohm.-cm, resepctively, but the deposition rate decreases from 47 nm/min to 17nm/min. On the other hand, as the substrate temperature increases form room temperature to 500.deg. C, resistivity decreases from 210.5.mu..ohm.-cm to 93.7.mu..ohm.-cm. RuO$_{2}$ thin film deposited at 300.deg. C shows a execellent surface roughness of 2.38nm. As the annealing temperature increases in the range between 400.deg. C and 650.deg. C, the resistivity decreases because of th improvement of crystallinity. We find that RuO$_{2}$ thin film deposited at 20% of O$_{2}$/(Ar+O$_{2}$) ratio and 300.deg. C of substrate temperature shows execellent combination of surface smoothness and low resistrivity so that it is well qualified for bottom electrodes for ferroelectric thin films.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.801-803
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• 1998

We investigated Pt and $RuO_2$ as a bottom electrode and PZT thin film for ferroelectric applications. XRD examination shows that a mixed phase of (111) and (200) Pt peak for the temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for the substrate temperature of $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$, 80 W for the Pt bottom electrode growth. From the study of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with $0{\sim}5%$, a mixed phase of Ru and $RuO_2$ for $10{\sim}40%$, pure $RuO_2$ at 50%. Having optimized the bottom electrode growth conditions, we employed two step process in PZT film capacitor: PZT film growth at the low substrate temperature of $300^{\circ}C$ and then post RTA anneal treatments. PZT films were randomly oriented on $RuO_2$ and (110) preferentially oriented on Pt electrode. Leakage current density of PZT film demonstrated two to three orders higher for $RuO_2$ bottom electrode. From C-V results we observed a dielectric constant of PZT film higher than 1200. This paper presents the optimized process conditions of the bottom electrodes and properties of PZT thin films on these electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.364-368
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• 1997

We have investigated Pt and RuO$_2$as a bottom electrode for a device application of PZT thin film. The bottom electrodes were prepared by using an RF magnetron sputtering method. We studied some of the property influencing factors such as substrate temperature, gas flow rate, and RF power. An oxygen partial pressure from 0 to 50% was investigated. The results show that only Ru metal was grown without supp1ying any O$_2$gas. Both Ru and RuO$_2$phases were formed for O$_2$partial pressure between 10∼40%. A Pure RuO$_2$ phase was obtained with O$_2$partial pressure of 50%. A substrate temperature from room temperature to 400$^{\circ}C$ was investigated with XRD for the film crystallinity examination. The substrate temperature influenced the surface morphology and the resistivity of Pt and RuO$_2$as well as the film crystal structure. From the various considerations, we recommend the substrate temperature of 300$^{\circ}C$ for the bottom electrode growth. Because PZT film growth on top of bottom electrode requires a temperature process higher than 500$^{\circ}C$, bottom electrode properties were investigated as a function of post anneal temperature. As post anneal temperature was increased, the resistivity of Pt and RuO$_2$was decreased. However, almost no change was observed in resistivity for an anneal temperature higher than 700$^{\circ}C$. From the studies on resistivity and surface morphology, we recommend a post anneal temperature less than 600$^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.182-183
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• 2009

플라즈마 원자층 증착법을 이용하여 Ru-TiN 빅막을 합성하였다. 박막 내 Ru의 함량은 Ru의 unit-cycle의 수에 따라 선형적으로 증가하였으며, Ru 함량이 증가함에 따라 박막의 비저항을 $3700{\mu}{\Omega}{\cdot}cm$에서 $190{\mu}{\Omega}{\cdot}cm$까지 자유롭게 조절할 수 있었다. Ru의 함량이 0.40 이상인 경우, Ru과 TiN 두물질이 교차 증착되어 서로의 결정 성장을 충분히 억제함으로서, 비정질구조를 가짐을 확인할 수 있었다. 또한, $O_2$ 분위기에서 열처리를 진행한 결과, Ru의 조성비가 0.40이상인 경우 $700^{\circ}C$까지 면저항의 변화가 거의 없음을 확인할 수 있었다.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.333-339
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• 1999

$RuO_2$ thin films were prepared with various deposition conditions by rf magnetron sputtering. The films were annealed in vacuum, air, and air-vacuum, after that, the structural and electrical properties of the films were investigated. As the substrate temperature increases, the preferred orientation of the films changes from (101) to (200), and the grain size increases; especially, at $500^{\circ}C$, the size considerably increases. The preferred orientation of the films changes from (200) to (101) and the roughness of surface increase with the increase in oxygen partial pressure. The lowest value of resistivity of $RuO_2$ we prepared is $1.5\times 10^{-5}\Omega\codt\textrm{cm}$ at the conditions of $400^{\circ}C$ and 10% of oxygen partial pressure. After the processes of annealing, the films deposited at $400^{\circ}C$ and a oxygen partial pressure of 10% were relatively stable. The films deposited at $500^{\circ}C$ have denser structure and smoother surface when the films are annealed in vacuum after annealing in air.