• Proceedings of the Korean Nuclear Society Conference
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• 1998.05a
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• pp.719-724
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• 1998

A preliminary fuel channel analysis for 35% reactor inlet header (RIH) break in CANDU reactor loaded with the CANFLEX-RU fuel bundles has been performed. The predicted results are compared with those for the reactor compared with those for the reactor loaded with standard 37-element bundles. The maximum fuel centerline and sheath temperatures for the CANFLEX-RU bundle channel were lower by 338 and 122 $^{\circ}C$, respectively, than those for the standard bundle because of the Bower maximum linear power of the CANFLEX-RU bundle In spite of the 0.4 FPS higher power pulse of the CANFLEX-RU bundle case. Fuel integrity margin to fuel breakup for the CANFLEX-RU bundle is about 50 J/g higher than that for the standard bundle. The PT/CT contact for the CANFLEX-RU bundle occurred 2 s later than that for the standard bundle. The PT/CT contact temperature for the CANFLEX-RU bundle was 2 $^{\circ}C$ lower than that for the standard bundle. These provide the CANFLEX-RU bundle with the negligibly enhanced safety margin for the fuel channel integrity in CANDU 6 reactor, compared with the standard bundle.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3658-3662
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• 2010

A new bis-Ru(II) complex, in which two [Ru(1,10-phenanthroline)$_2$dipyrido[3,2-a:2',3'-c]phenazine]$^{2+}$ were tethered by a 1,3-bis(4-pyridyl)propane linker, was synthesized and its binding mode and stoichiometry to DNA was investigated by optical spectroscopy including linear dichroism (LD) and fluorescence intensity measurement. The magnitude of the negatively reduced LD signal of the bis-Ru(II) complex in the dipyrido[3,2-a:2',3'-c]phenazine (DPPZ) ligand absorption region appeared to be similar compared to that in the DNA absorption region, which is considered to be a diagnostic for DPPZ ligand intercalation. The binding stoichiometry measured from its LD magnitude and enhanced fluorescence intensity corresponds to one ligand per three DNA bases, effectively violating the nearest neighbouring site exclusion model for classical DNA intercalation. This observation is in contrast with monomer analogue [Ru(1,10-phenanthroline)$_2$dipyrido[3,2-a:2',3'-c]phenazine]$^{2+}$, which is saturated at the DPPZ ligand to DNA base ratio of 0.25, or one DPPZ ligand per four nucleobases.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.256-259
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• 2005

본 연구에서는 기존 니켈 활성성분만의 알루미나담지 촉매에 비해 고온에서의 수소를 사용한 환원 전처리 과정을 거치지 않고도 높은 반응활성을 나타내며, 반응 중 탄소침적에 대한 촉매 저항성에서도 우수한 결과를 나타낸 루테늄-니켈 촉매에 대해보고 하고자 한다. 메탄 수증기 개질 반응을 통해, 루테늄을 최종적으로 담지한 알루미나 담지니켈계 촉매는 별도의 전처리과정 없이 $650^{\circ}C$에서부터 높은 반응성을 보였으며, 루테늄과 니켈을 동시에 담지한 경우보다 더 우수한 활성을 나타내었다. Ru의 담지량을 달리한 실험에서는$RU(0.5)/Ni(20)/Al_2O_3$ 촉매가 가장 높은 활성을 보였다. $H_2-TPR$ 분석 결과, $Ru(0.5)/Ni(20)/A1_2O_3$촉매의 경우 세 가지 환원 피크가 나타났으며, $Ni(20)/A1_2O_3$촉매와 비교해 볼 때, 저온(<$130^{\circ}C)$에서 환원가능한 $RUO_2$의 존재를 확인할 수 있었다. 담지된 RU은 분산도가 높아, XRD분석 결과에서 Ru이나 $RuO_2$의 특성 피크가 존재하지 않았다. 또한 $650^{\circ}C$에서 10시간 개질반응 후 얻어진 촉매에 대해 $O_2-TGA$를 분석한 결과, $Ni(20)/Al_2O_3$촉매는 $-7.2wt\%$ 정도의 큰 무게 감소를 보였으며, 이는 촉매 표면에 생성된 carbon tube에 의한 것임을 SEM 분석을 통해 알 수 있었다 이에 반해, $Ru(0.5)/Ni(20)/Al_2O_$ 촉매는 $O_2-TGA$시 $0.3wt\%$ 정도 무게 증가에 그쳤으며, SEM 분석상 carbon tube의 생성이 크게 억제되었음을 알 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.599-604
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• 1998

We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.969-976
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• 1996

RuO2 thin films were deposited on SiO2(1000 $\AA$)/Si by hot-wall Metal Organic Chemical Vapor Depositon. The crystallinity of RuO2 thin films increased with increasing deposition temperature and the preferred orienta-tion of RuO2 films converted (200) plane to (101) plane with increasing film thicknesses. Such a change in preferred orientation was influenced on the crystallographic structure and the residual stress of RuO2 thin films. The resistivity of the 2700$\AA$-thick RuO2 thin films deposted at 30$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm and they could be applicable to bottom electrodes of high dielectric materials. However the resistivity of RuO2 thin films increased with decreasing film thicknesses. The grain size and the resistivity of RuO2 thin films were densified with increasing the annealing temperature and showed the decrease of resistivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.394-397
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• 2001

In this paper, in-situ deposited $Ru/RuO_2$ bottom electrodes have been investigated as new bottom electrodes for PZT thin film capacitor application. As a comparison, structural and electrical properties of PZT thin films on Pt/Ti and $RuO_2$ bottom electrodes are also investigated. The use of $Ru/RuO_2$ hybrid electrodes showed better electrical properties in compression with $RuO_2$ bottom electrode. With increasing Ru electrode thickness, the PZT thin films showed preferred orientation along the (110) direction and and leakage current of PZT thin films were improved. The PZT thin films on Ru (100nm)/$RuO_2$ electrodes exhibited excellent ferroelectric properties such as remant polarization and coercive field of $7.2C/cm^2$ and 46.35 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.58-62
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• 2002

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ (PZT) thin films deposited on the Pt/Ti and Ru/$RuO_2$ bottom electrode by rf magnetron sputtering methode. Ru/$RuO_2$ bottom electrode deposited on the p-type wafer as Ru thickness by in-situ process. Our results show that all PZT films indicated perovskite polycrystalline structure with perferred orientation (110) and no pyrochlore phase is observed. A well-fabricated $RuO_2$/PZT/Ru(100nm)/$RUO_2$ capacitor showed a leakage current density in the order of $2.13{\times}10^{-7}A/cm^2$ as 100 kV/cm, a remanent polarization of 7.20 ${\mu}C/cm^2$, and a coercive field of 58.37 kV/cm. The results show that the new Ru/$RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.394-397
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• 2001

In this paper, in-situ deposited Ru/RuO$_2$ bottom electrodes have been investigated as new bottom electrodes for PZT thin film capacitor application. As a comparison, structural and electrical properties of PZT thin films on Pt/Ti and RuO$_2$ bottom electrodes are also investigated. The use of Ru/RuO$_2$ hybrid electrodes showed better electrical properties in compression with RuO$_2$ bottom electrode. With increasing Ru electrode thickness, the PZT thin films showed preferred orientation along the (110) direction and leakage current of PZT thin films were improved. The PZT thin films on Ru (100nm)/RuO$_2$ electrodes exhibited excellent ferroelectric properties such as remant polarization and coercive field of 7.2 C/$\textrm{cm}^2$ and 46.35 kV/cm, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.49-55
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• 2016

The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.