• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.51-51
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.59-59
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• 1996

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.671-678
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• 2001

All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.4
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• pp.281-288
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• 2001

PZT thin films (3500$\AA$) have been prepard on the Ru/Ru $O_2$ and Ru $O_2$ bottom electrodes with a RF magnetron sputtering system using P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ ceramic target. Ru/Ru $O_2$ bottom electrode was fabricated by in-situ processing controlled the $O_2$ partial pressure. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrode were preferred oriented (101) plane. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrodes showed better electrical properties than those with Ru $O_2$ bottom electrodes because Ru $O_2$ prevented oxygen vacancies and impurities from existing withing the interface and substrate.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.480-483
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• 2001

Epitaxial rutile-$TiO_2$ and anatase-$TiO_2$ films were grown at $800^{\circ}C$ on $Al_2O_3$ (1102) and $LaAlO_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-$TiO_2$ and anatase-$TiO_2$ films on conductive $RuO_2$ and $La_{0.5}Sr_{0.5}CoO_{3}$ electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-$TiO_2$ film grown on $RuO_2$ showed a very broad peak in the visible light region. An epitaxial anatase-$TiO_2$ film grown on $La_{0.5}Sr_{0.5}CoO_{3}$ showed a strong peak with a threshold energy of 3.05 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.480-483
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• 2001

Epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films were grown at 80$0^{\circ}C$ on $Al_2$O$_3$ (1102) and LaAlO$_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films on conductive RuO$_2$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ electrodes, respectively Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO$_2$ film grown on RuO$_2$ showed a very broad peak in the visible light region. An epitaxial anatase-TiO$_2$ film grown on La$_{0.5}$Sr$_{0.5}$CoO$_3$ showed a strong peak with a threshold energy of 3.05 eV 3.05 eV

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.60.2-60.2
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• 2010

A $TiO_2$ films in dye-sensitized solar cells was fabricated using $TiO_2$ colloidal sol prepared from titanium iso-propoxide used as a starting material by applying the sol-gel method. It was characterized by particle size analyzer, XRD, FE-SEM, and BET analysis. The adsorption isotherms of dye molecule on $TiO_2$ films were obtained at three different temperatures (30, 45, $60^{\circ}C$) and at three different pH (3, 5, 7). The adsorption kinetics of dye molecule on $TiO_2$ films were obtained at three different temperatures (30, 45, $60^{\circ}C$. The adsorption experimental data were correlated with Langmuir isotherm model and pseudo-second-order model. Also the isosteric enthalpies of dye adsorption were calculated by the Clausius-Clapeyron equation. In addition, the adsorption energy distribution functions which describe heterogeneous characteristics of nanocrystalline $TiO_2$ film surface were calculated by using the generalized nonlinear regularization method. We found that efficient adsorption of N719 dye from aqueous solution onto $TiO_2$ films can be successfully achieved by dye adsorption conditions and morphology of $TiO_2$ films.

• Journal of Sensor Science and Technology
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• v.20 no.2
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• pp.82-89
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• 2011

Ruthenium(Ru)-doped $TiO_2$ nanofibers were prepared using electrospun Ru-$TiO_2$/poly(vinyl acetate) (PVAc) fibers and subsequent annealing for 1 h at temperatures in the range of $500^{\circ}C$ to $1000^{\circ}C$ in air. The properties of the Ru-$TiO_2$ fibers were characterized as a function of the Ru content and calcination temperature using X-ray diffraction, thermal gravimetry with differential scanning calorimetry, Fourier transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, and viscometer, pycnometer and dynamic tensiometer measurements. Although the diameter of the fiber decreased slightly with increasing calcination temperature, no dramatic changes were observed with respect to the ruthenium content. The XRD and FT-IR results revealed that anatase phase and ruthenium metal began to be formed after calcination at temperatures above $500^{\circ}C$. Anatase and rutile phases and ruthenium metal coexisted in the fibers calcined above $600^{\circ}C$. No anatase phase was detected in the fibers containing ruthenium when they were calcined at $1000^{\circ}C$. The morphology of the fibers changed from smooth and uniform to porous with increasing temperature. The experimental results suggest that the calcination temperature and Ru content were influential in determining the morphology and structure of the fibers.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.12
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• pp.2263-2273
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• 2000

Catalytic wet air oxidation of acetic acid over Mn-Ce based catalysts deposited on various supports ($SiO_2$, $TiO_2$, $ZrO_2$), $ZrSiO_4$, $ZrO_2(10wt%)/TiO_2$) have been carried out in high pressure microreactors. Also, promotional effects by small addition(O.5~1.0 wt%) of p-type semiconductors (CoO, $Ag_2O$, SnO) have been investigated. From the screening tests for initial activity ranking, both Mn(2.8)-Ce(7.2 wt%) and Ru(O.4)Mn(2.7)-Ce(6.9 wt%) supported on $TiO_2$ were selected as the promising reference candidates. In $Mn-Ce/TiO_2$ reference catalyst, addition of small amount of each p-type semiconductor (Co, Sn and Ag) resulted in activity promotional effect and the degree of the increase was in the following order: Co> Ag > Sn. Especially, $Mn-Ce/TiO_2$ promoted with 0.5 wt% Co gave the 2.6 folds activity increase compared to the reference case attributing to the surface area increase as well as synergy effect. In $Ru-Mn-Ce/TiO_2$ reference catalyst, only Co(1.0 wt%) promoted case showed a little reaction rate increase.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.423-429
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• 2002

RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.