• 제목/요약/키워드: Rotating susceptor

검색결과 4건 처리시간 0.023초

CVD 반응기 내에서의 유동장에 대한 샤워헤드 지름의 영향에 대한 수치적 연구 (EFFECTS OF SHOWERHEAD DIAMETERS ON THE FLOWFIELDS IN A RF-PECVD REACTOR)

  • 김유재;김윤제
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 춘계학술대회
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    • pp.1475-1480
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    • 2004
  • Plasma Enhanced Chemical Vapor Deposition (PECVD) process uses unique property of plasma to modify surfaces and to achieve the high deposition rates. In this study, a vertical thermal RF-PECVD (Radio Frequency-PECVD) reactor is modeled to investigate thermal flow and the deposition rates with various shapes of the showerhead. The showerhead in the CVD reactor has the shape of a ring and gases are injected in parallel with the susceptor, which is a rotating disk. In order to achieve the high deposition rates, we have simulated the thermal flow fields in the reactor with several showerhead models. Especially the effects of the number of injection holes and the rotating speed of the susceptor are studied. Using a commercial code, CFDACE, which uses FVM (Finite Volume Method) and SIMPLE algorithm, governing equations have been solved for the pressure, mass-flow rates and temperature distributions in the CVD reactor. With the help of the Nusselt number and Sherwood number, the heat and mass transfers on the susceptor are investigated. In order to characteristics of measure the flatness of the layer, furthermore, the relative growth rate (RGR) is considered.

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백색 LED 증착용 MOCVD 장치에서 유도가열을 이용한 기판의 온도 균일도 향상에 관한 연구 (Study of Temperature Uniformity Improvement of Inductive Heating in MOCVD Systems to Deposit White LED)

  • 홍광기;양원균;주정훈;이승호;이태완
    • 한국표면공학회지
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    • 제43권6호
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    • pp.304-308
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    • 2010
  • Deposition temperature uniformity of GaN based MQW (multiple quantum well) layers is an important key which affects the wavelength uniformity of white LEDs. Temperature uniformity was assessed by infrared images for both cases of a static and a rotating susceptor. Rotating the susceptor at 2.5 rpm over the induction heater gave 4.3% of temperature non-uniformity. Temperature distribution of the graphite susceptor over the induction heater was numerically modelled and agreed with experimental results.

CVD 반응로 내부 회전 원판 주위의 유동 특성 연구 (A Study on the Flow Characteristics over the Rotating Susceptor in CVD Reactor)

  • 차관;김윤제;부진효
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 춘계학술대회논문집E
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    • pp.213-218
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    • 2001
  • The characteristics of the fluid flow and mass transfer in a vertical atmospheric pressure chemical vapor deposition (APCVD) are numerically studied. In order to get the optimal process parameters for the uniformity of deposition on a substrate, Navier-Stokes and energy equations have been solved for the pressure, mass-flow rate and temperature distribution in a CVD reactor. Results show that the thermal boundary condition at the reactor wall has an important effect in the formation of buoyancy-driven secondary cell when radiation effect is considered. Results also show that reduction of the buoyancy effect on the heated reactor improves the uniformity of deposition.

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Numerical Study on Flow and Heat Transfer in a CVD Reactor with Multiple Wafers

  • Jang, Yeon-Ho;Ko, Dong Kuk;Im, Ik-Tae
    • 반도체디스플레이기술학회지
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    • 제17권4호
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    • pp.91-96
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    • 2018
  • In this study temperature distribution and gas flow inside a planetary type reactor in which a number of satellites on a spinning susceptor were rotating were analyzed using numerical simulation. Effects of flow rates on gas flow and temperature distribution were investigated in order to obtain design parameters. The commercial computational fluid dynamics software CFD-ACE+ was used in this study. The multiple-frame-of-reference was used to solve continuity, momentum and energy conservation equations which governed the transport phenomena inside the reactor. Kinetic theory was used to describe the physical properties of gas mixture. Effects of the rotation speed of the satellites was clearly seen when the inlet flow rate was small. Thickness of the boundary layer affected by the satellites rotation became very thin as the flow rate increased. The temperature field was little affected by the incoming flow rate of precursors.