• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.366-366
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• 2008

Amorphous carbon (a-C) is an interesting materials and its characteristics can be varied by tuning it $sp^3$ fractions. The $sp^3$ fraction in a-C films depends on the kinetic energy of the deposited carbon ions. In this work, a-C films was synthesized on Si(100) and glass substrates at room temperature by closed-field unbalanced magnetron (CFUBM) sputtering with the increase of graphite target power density. The structural and physical properties of films were investigated by using Raman spectroscopy, X-ray photoelectron spectrometer (XPS), nano- indentation, atomic force microscope (AFM) and contact-angle measurement. We obtained the good tribological properties, such as high hardness up to 26 GPa., friction coefficient lower than 0.1 and the smooth surface (rms roughness: 0.12 nm). The increase of the physical properties with the increase of target power density are related to the increase of nano-clusters in the carbon network. Also, these results might be due to the increase of the subplantation and resputtering by the increase of ions density in the plasma.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.3 s.106
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• pp.239-248
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• 2006

In this paper, the cryogenically cooled low noise amplifier module for radio telescope receiver front-end using pHE-MT MMIC is designed and fabricated. In the selection of MMIC, the MMIC fabricated with the pHEMTS providing successful cryogenic operation are chosen. They are mounted in the housing using the thin film substrate. In the design of the housing, the absorber and the elimination of the gap between the carrier and the housing as well removed the unnecessary oscillations by its structure. The mismatch is improved by ribbon-tuning to provide the best performance at room temperature. The fabricated module shows the gain of $35dB{\pm}1dB$ and the noise figure of $2.37{\sim}2.57dB$ at room temperature over $21.5{\sim}23.5GHz$. In the cryogenic temperature of $15^{\circ}K$ cooled by He gas, the measured gain was above 35 dB and flatness ${\pm}2dB$ and the noise temperatures of $28{\sim}37^{\circ}K$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.9
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• pp.1330-1336
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• 2015

It is necessary to study on acoustic and vibratory response of a MEMS resonant accelerometer before applying to military applications. In this paper, we analyze why the resonant accelerometer reacts to an acoustic wave and a high frequency vibration. And we describe experimental results on acoustic and vibratory response of the accelerometer. The accelerometer consists of a proof mass and a dual ended tuning fork. It is a differential resonant accelerometer with arranging a pair of accelerometers. The mode shape was analyzed to find out the input mode frequency by using a FEM simulation. Some experiments regarding the acoustic noise was carried out by using a tweeter and a microphone in the anechoic room. Results showed that the accelerometer reacted to the acoustic wave and vibration which had the input mode frequency as we had expected. We showed experimentally not only that the susceptibility of the accelerometer to an acoustic wave was 70 dB but also that the effectiveness of applying an acoustic absorber and a metal case was 20 dB, respectively. Also, we could minimize the vibratory response property of the accelerometer by installing a IMU with a silicone rubber mount pad.

• Journal of Power System Engineering
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• v.3 no.3
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• pp.60-69
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• 1999

The noise and vibration sources of rotary compressor for room air-conditioner are pressure pulsation of compression process, cavity resonance of inner space, structural radiation noise of shell and impact noise of discharge valve. Among them, pressure pulsation is very important noise and vibration source. Because it transferred various kinds of noise and vibration like as mentioned above. In this reason, muffler and resonator are used in order to absorb and remove these noises. But an analytical prediction using acoustic analysis does not coincident with the experimental result. The difference between analysis and actual state is due to the assumption of analysis. This paper covered with new concept of muffler design based on the turbulence kinetic energy of flow by using CFD. From this analysis, it is possible to decide the best position of discharge port of muffler. Therefore $2{\sim}3dB$ noise reduction effect is acquired in rotary compressor of 5000 BTU grade. Also new approach of resonator design is suggested. From this study, the characteristics of resonator and surge hole (a kind of resonator without pipe length) are identified. The former is useful for pure tone noise (narrow frequency band), and the latter is effective for broad frequency band. This paper shows that it is very available to use 3 dimensional analysis of resonator in order to predict more exact tuning frequency. The result is proved by a lot of experiments. From combination of fluid analysis and acoustic analysis, up stream position is effective location of resonator concerning turbulence motion of fluid.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2754-2758
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• 2009

Three novel phosphorescent 2-phenylpyridine-based iridium(III) complexes, $[(ppy)_2Ir(P\^{}N)]PF6\;(1),\;[(dfppy)_2Ir(P\^{}N)]PF_6$ (2), and $[(dfmppy)_2 Ir(P\^{}N)]PF6$ (3), where $P\^{}N$ = 2-[(diphenylphosphino)methyl]pyridine (dppmp), were synthesized and characterized. The absorption, photoluminescence, cyclic voltammetry and thermal stability of the complexes were investigated. The complexes showed bright blue luminescences at wavelengths of 448 $\sim$ 500 nm at room temperature in $CHCl_3$ and revealed that the $\pi$-acceptor ability of the phosphorous atom in the ancillary dppmp ligand plays an important role in tuning emission color resulting in a blue-shift emission. The single crystal structure of $[(dfmppy))_2Ir(P\^N)]PF_6$ was determined using X-ray crystallography. The iridium metal center adopts a distorted octahedral structure coordinated to two dfmppy and one dppmp ligand, showing cis C-C and trans N-N chelate dispositions. There is a $\pi-\pi$ overlap between π electrons delocalized in the difluorophenyl rings.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.771-776
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• 2004

[ $Ba(Zr_{0.08}Ti_{0.92})O_3$ ] polycrystal was grown by floating zone technique with two ellipsoidal mirrors using the $8\%$of Zr-modified BZT ceramics as both a feed rod and a seed crystal. In order to study the annealing effect, a part of the grown crystal was sliced and annealed in the oxygen atmosphere at $1,200^{\circ}C$ for 10 h. The dielectric constant and loss at 10 kHz, 100 kHz, and 1 MHz were measured in the temperature range between $-100^{\circ}C$ and $150^{\circ}C$ to investigate the dielectric properties of the grown polycrystal. The electric-field dependence of the dielectric constant at 10 kHz and 100 kHz was studied by measuring the dielectric constants as a function of the biased-electric fields which ran from -15 kV/cm to 15 kV/cm. Due to the effect of annealing in the oxygen atmosphere, the electric-field tunability of dielectric constants increased from $47.5\%$ to 5 to and the figure of merit for this material from 39.6 to 46.4. Since the figure of merit can be increased to more than 46.4 by increasing the maximum value of the biased-electric fields to more than 15 V/cm, this material nay have a possibility for applications in microwave tuning devices at room temperature.

• Journal of the Korea Convergence Society
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• v.8 no.5
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• pp.161-167
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• 2017

We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.