• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.96-100
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• 2023

We have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various O₂ flow rate. Experiments were carried out while varying the oxygen gas flow rate from 0sccm to 1.0sccm to see how the oxygen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 2125x10^-3 Ωcm when the IGZO film was deposited at RT and set up at 0.1sccm. As the oxygen vacancy rate decreased, the resistivity intended to increase. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.434-441
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.467-474
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-TiB_2$ electroconductive ceramic composites was investigated. The $SiC-TiB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] $Al_2O_3+Y_2O_3(6:4\;mixture\;of\;Al_2O_3\;and\;Y_2O_3)$ as a sintering aid. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 84.92[%], 140[MPa], 4.07[GPa] and $3.13[MPa{\cdot}m^{1/2}]$ for $SiC-TiB_2$ composites of $1,900[^{\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The electrical resistivity showed the value of $5.51{\times}10^{-4},\;2.11{\times}10^{-3},\;7.91{\times}10^{-4}\;and\;6.91{\times}10^{-4}[\Omega{\cdot}cm]$ for ST1750, ST1800, ST1850 and ST1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $3.116{\times}10^{-3},\;2.717{\times}10^{-3},\;2.939{\times}10^{-3},\;3.342{\times}10^{-3}/[^{\circ}C]$ for ST1750, ST1800, ST1850 and ST1900 respectively in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. It is assumed that because polycrystallines, such as recrystallized $SiC-TiB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-TiB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 한국재료학회지
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• 제30권10호
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• pp.558-565
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• 2020

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al³⁺ ions of relatively small ion radius are substituted for Zn²⁺ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al_2p and O_ll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10¹⁹ cm^-3 of carrier concentration, 8.4 cm^-2/V·s of mobility and 1.2 × 10^-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.714-716
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• 2005

We studied the dependence of the electrical characteristics of MgO protecting layer on temperature in an AC PDP cell. Careful measurements of the surface resistance of MgO were performed for the temperature range from room temperature to $100^{\circ}C$ with and without the VUV illumination. Experimental results show that the resistivity is affected by not only the temperature but also VUV irradiation. The measurement of wall charge distribution and the address discharge delay time as to the temperature show that the resistivity change of MgO may affect the wall voltage and consequently the discharge delay time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.15-18
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• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.641-646
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• 2011

Ga-doped ZnO-$SnO_2$ (ZSGO) films were deposited by rf magnetron sputtering and their structural and electrical properties were investigated. In order to fabricate the target for sputtering, the mixture of ZnO, $SnO_2$ (1:1 weight ratio) and $Ga_2O_3$ (3.0 wt%) powder was calcined at $800^{\circ}C$ for 1 h. The substrate temperature was varied from room temperature to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The optical transmittances of the films were measured and the optical energy band gaps were obtained from the absorption coefficients. The resistivity variation with substrate temperature was measured. Auger electron spectroscopy was employed to find the atomic ratio of Zn, Sn, Ga and O in the film deposited at room temperature. ZSGO films exhibited the optical transmittance in the visible region of more than 80% and resistivity higher than $10\;{\Omega}cm$.

• 한국재료학회지
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• 제22권12호
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• pp.658-663
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• 2012

The electrical properties of a laminated SMD type PTC thermistor for microcircuit protection were investigated as a function of polymer blowing agent addition. Green ceramics for multilayered $BaTiO_3$-based PTCRs were formed by doctor blade method of barium titanate powders; we successfully laminated the sintered ceramic chips to obtain 10 layer chip PTCRs with PTC effect. The sintered density increases with increasing sintering temperature. The electrical properties of the sintered samples were strongly dependent on the calcination and addition of a polymer blowing agent. When $BaTiO_3$ powders containing 0.2 mol% of $Y_2O_3$ were calcined at $1000^{\circ}C$ for 2 hrs, the resistivity jump was of 1-2 orders of magnitude. The resistivity at room temperature increases according to the polymer blowing agent addition. Also, the sample using the calcined powder showed a lower resistivity than that of the sample prepared using powders without calcinations. With an increase in the OBSH, the magnitude of the resistivity jumped as a function of the temperature increase. The resistivity of the sintered bodies after the addition of 0.5 wt% polymer blowing agent at $1290^{\circ}C$ for 2 h was shown to be about $8.5{\Omega}{\cdot}cm$; the jump order of the sintered bodies was shown to be on the order of $10^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.6-8
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• 2005

The optical and electrical properties of indium tin oxide (ITO) thin films deposited at room temperature can be substantially enhanced by adopting a two-step process. In the first step, the films (50 nm thick) were grown by pulsed laser deposition (PLD) on glass substrate at room temperature and quickly annealed at $400^{\circ}C$ in nitrogen ambient for 1 minute by using rapid thermal annealing method. The process was completed by additional deposition (150 nm thick) on annealed film at room temperature. High quality ITO films grown by two-step process at room temperature could be obtained with the resistivity of $3.02{\times}10^{-4}{\Omega}cm$, the carrier mobility of 32.07 $cm^2/Vs$, and the transparency above 90 % in visible region mainly due to the enhancement of the film crystallinity and the increase of grain size.

• 한국세라믹학회지
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• 제46권3호
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• pp.330-335
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• 2009

We investigated the effects of the re-oxidation temperature and time on the positive temperature coefficient (PTC) of resistivity characteristics of Sm-doped $BaTiO_3$ sintered at $1200{\sim}1260^{\circ}C$ for 2 h in a reducing atmosphere (3% $H_2/N_2$), followed by re-oxidization processes in air, in which re-oxidization temperature and time were $600{\sim}1000^{\circ}C$ and $1{\sim}10$h, respectively. The result reveals that Smdoped (Ba,Ca)$TiO_3$ ceramics fired in a reducing atmosphere exhibit low PTC characteristics, whereas the sample re-oxidized at $800^{\circ}C$ for 1 h in air exhibit pronounced PTC characteristics. The room-temperature resistivity and jumping characteristics of resistivity (${\rho}_{max}/{\rho}25^{\circ}C$) decrease with Sm contents. The PTC characteristics with reoxidization time at $800^{\circ}C$ have improved about $2{\sim}3$ orders of magnitude whereas differed according to the sintering temperature. The 0.7 at% Sm-doped (Ba,Ca)$TiO_3$ samples reveal the best PTC characteristics in the present range of formula and processes.