• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.217-221
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• 2008

In this study, We have been investigated the effect of calcination temperature and high-energy ball-milling of powder influences the $BaTiO_3$-based PTCR(Positive Temperature coefficient Resistance) characteristics and microstructure. The mixed powder was obtained from $BaCO_3$, $TiO_2$, $CeO_2$ ball-milled in attrition mill. The mixed powder was calcine from 1000 $^{\circ}C$ to 1200 $^{\circ}C$ in air and then it was sintered in reduction- re-oxidation atmosphere. As a result, The room-temperature electrical resistivity decreased and increased with increasing calcination temperature. specially, Attrition milled powder could have low room-temperature resistivity and high PTC jump order at 1100 $^{\circ}C$. attrition milling had lower room-temperature resistivity than ball milling. Particle size decreased by Attrition milling of powder influences in calcination temperature and room-temperature resistivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.55-58
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• 2002

In this paper, the volume resistivity properties of silicone rubber investigated due to temperature dependence. And the measurement of volume resistivity is measured from 1, 5 and 10 minutes when the each applied voltage, for example, DC 100[V], 250[V], 500[V] and 1000[V], is applied. according to the step voltage application method. As a result, The volume resistivity is higher high voltage than low voltage at the room temperature, but is higher low voltage than high voltage at high temperature.

• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.652-656
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• 1998

$(Ba_{0.8-x}Sr_{0.2})Y_xTiO_3\;(BSYT)$ powders were prepared by the calcination of metal-oxalate precipitates, which were obtained by wet chemical method using Ba, Sr, Y and Ti-nitrates and oxalic acid. Yttrium content, sintering temperature and cooling rate were taken as experimental factors. Response surface method was applied to modelling of the room temperature resistivity of BSYT. The results indicated that the Yttrium content had larger effect on the room temperature resistivity and minimum room temperature resistivity was at Yttrium content of 0.24 mol%. The validity of a modelling equation was confirmed by comparing the measured room temperature resistivity with the calculated one.

• Journal of international Conference on Electrical Machines and Systems
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• v.2 no.1
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• pp.45-50
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• 2013

This paper presents design of induction motor in very low temperature for LNG main cargo pump and comparison of two motors. One is the motor for using in room temperature and another is the motor for using very low temperature. This paper designs with Equivalent circuit Method and uses Finite Element Method to analysis. The motor for very low temperature considers variation of coil resistivity due to temperature change and compare torque characteristic with the motor for room temperature. Design element of motor for very low temperature considers resistivity variation following temperature change on going through this paper. The result shows that two types of motors are almost same torque curve characteristic even though they are not the same environment.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.124-129
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• 2012

An M-shaped SiC gas igniter was fabricated by a reaction sintering followed by nitrogen doping. The igniter showed both resistivity at room temperature and NTC to PTC transition temperature values that were lower than those of commercial igniters. It was deduced that the doped nitrogen reduces the electrical resistivity at room temperature, while, at high temperature, the doped nitrogen and a trace of $Si_3N_4$ phase work as scattering centers against electron transfer, resulting in a lowered NTC-to-PTC transition point (below $650^{\circ}C$). Such characteristics were correlated to the fast heating speed (as compared to the commercial models) and to the prevention of the high temperature overshooting of the nitrogen-doped SiC igniter.

• Carbon letters
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• v.2 no.3_4
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• pp.159-164
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• 2001

In this study, the effects of carbon black (CB) content and anodic oxidation treatment with $AgNO_3$ on positive temperature coefficient (PTC) behavior of CB/HDPE nanocomposites were investigated. Also, the addition of elastomer as a toughing agent was studied. The 20~50 wt% of CB, 0~5 wtt% of elastomer, and 1 wt% of $AgNO_3$-filled HDPE nanocomposites were prepared using the internal mixer in 60 rpm at $160{\circ}C$ and the compression-molded at $180{\circ}C$ for 10 min. As a result, the room temperature resistivity and PTC intensity of the composites were dependent, to a large extent, on the content of CB, addition of elastomer, and surface chemical properties that were controlled in the relative arrangements of the carbon black aggregates in a polymeric matrix. Moreover, the composites with relatively low room temperature resistivity and suitable PTC intensity could be achieved by treatment of $AgNO_3$. Consequently, it was noted that PTC effect was due to the deagglomeration or the breakage of the conductive networks caused by thermal expansion or crystalline melting of the polymeric matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.601-606
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• 1998

ZnO thin film had been deposited on the glass by sputtering method, and the electrical and structural properties were investigated. When the rf power was 180W and sputtering was 10 m Torr at room temperature, Al-doped ZnO thin film had the lowest resistivity(1$\times10^{-4}\Omega\cdot{cm}$) and then carrier concentration and Hall mobility were $6.27\times10^{20} cm^{-3} and 22.04 cm^2/V\cdot$s, respectively. The undoped ZnO thin film had about 10$\times10^{14}\Omega\cdot cm$ resistivity when oxygen content was 10% or more at room temperature. When the oxygen content was 50% and below and sputtering pressure was 1.0$\times$1.0 \ulcorner Torr, the surface morphology of thin film observed by SEM was overall uniform.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.6-11
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• 2018

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

• Geophysics and Geophysical Exploration
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• v.18 no.3
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• pp.105-114
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• 2015

A long-term resistivity monitoring system has been developed for saturated cores in room temperature and humidity condition. A 3-channel water-pump continuously drops the water onto the top of saturated core sample surrounded by shrinkable tube as well as on the paper filters of the electrodes at both sides of the core sample, by which one can monitor the resistivity changes with maintaining full saturation of the rock core for a week or longer. Monitoring the resistivity changes has been performed with 3 kinds of rock samples including biotite gneiss, andesitic tuff, and shale for 9 days using the system. Consequently, it is proposed two hypothesis that conversion speed of temperature coefficient has close relation to the thermal properties of the rock sample and that the ratio of resistance between dry and saturated conditions for a rock sample can be related to the effective porosity of the sample. The ratio between dry and saturated resistance for the three rock types are 48, 705, and 2, while effective porosity was 3.7%, 3.3%, and 13.0%, respectively.