• 제목/요약/키워드: Room temperature process

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변형률속도를 고려한 상온 나노임프린트 공정의 유한요소해석 (Finite Element Analysis of the Room Temperature Nanoimprint Lithography Process with Rate-Dependent Plasticity)

  • 송정한;김승호;;허훈
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2005년도 추계학술대회 논문집
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    • pp.63-66
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    • 2005
  • Nanoimprint lithography (NIL) process at room temperature has been newly proposed in recent years to overcome the shape accuracy and sticking problem induced in a conventional NIL process. Success of the room temperature NIL relies on the accurate understand of the mechanical behavior of the polymer. Since a conventional NIL process has to heat a polymer above the glass transition temperature to deform the physical shape of the polymer with a mold pattern, viscoelastic property of polymer have major effect on the NIL process. However, rate dependent behavior of polymer is important in the room temperature NIL process because a mold with engraved patterns is rapidly pressed onto a substrate coated with the polymer by the hydraulic equipment. In this paper, finite element analysis of the room temperature NIL process is performed with considering the strain rate dependent behavior of the polymer. The analyses with the variation of imprinting speed and imprinting pattern are carried out in order to investigate the effect of such process parameters on the room temperature NIL process. The analyses results show that the deformed shape and imprint force is quite different with the variation of punch speed because the dynamic behavior of the polymer is considered with the rate dependent plasticity model. The results provide a guideline for the determination of process conditions in the room temperature NIL process.

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2-step 공정법에 의해 상온 증착된 ITO박막의 전기 광학적 특성 향상 (Enhancement in electrical and optical properties of ITO thin films grown by 2-step process at room temperature)

  • 김종훈;안병두;전경아;강홍성;이상렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.6-8
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    • 2005
  • The optical and electrical properties of indium tin oxide (ITO) thin films deposited at room temperature can be substantially enhanced by adopting a two-step process. In the first step, the films (50 nm thick) were grown by pulsed laser deposition (PLD) on glass substrate at room temperature and quickly annealed at $400^{\circ}C$ in nitrogen ambient for 1 minute by using rapid thermal annealing method. The process was completed by additional deposition (150 nm thick) on annealed film at room temperature. High quality ITO films grown by two-step process at room temperature could be obtained with the resistivity of $3.02{\times}10^{-4}{\Omega}cm$, the carrier mobility of 32.07 $cm^2/Vs$, and the transparency above 90 % in visible region mainly due to the enhancement of the film crystallinity and the increase of grain size.

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High Resolution Electrodes Fabrication for OTFT Array by using Microcontact Printing and Room Temperature Process

  • Jo, Jeong-Dai;Choi, Ju-Hyuk;Kim, Kwang-Young;Lee, Eung-Sug;Esashi, Masayoshi
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.186-189
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    • 2006
  • The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than $40^{\circ}C$. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.

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Study of Magnetic Field Shielded Sputtering Process as a Room Temperature High Quality ITO Thin Film Deposition Process

  • Lee, Jun-Young;Jang, Yun-Sung;Lee, You-Jong;Hong, Mun-Pyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.288-289
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    • 2011
  • Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

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유한요소해석을 이용한 Mg 합금 판재 성형 공정 변수 분석 (FEM analysis for process variables in sheet metal forming for Mg alloy)

  • 이영선;권용남;이정환
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.1082-1086
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    • 2004
  • Since the sheet forming of Mg alloy has many difficulties due to the low formability, many forming conditions need to be selected properly. Especially, the process variables should be investigated to increase the formability, such as, forming temperature. In this paper, the effects of forming process variables has been investigated using the bending and deep drawing process. A simple U-bending designed for mobile part could be formed in room temperature and springback amounts are surveyed. On the other hand, square cup part couldn't be formed in room temperature due to the low formability. Therefore, the effects of forming temperature are investigated in deep drawing process for square cup part. As a experimental and FEM results, the optimum forming temperature is presence and formability in a higher temperature is less than that of lower temperature. Above experimental results are compared with the FEM analysis and well coincided with the experimental results. Therefore, more detail investigations could be progressed to select more appropriate process conditions by the FEA.

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자체여압 형 항공기용 저장조의 온도 및 습도에 따른 내부압력 변화에 관한 실험적 연구 (An Experimental Study on the Effect of Temperature and Humidity on the Pressure Change of the Bootstrap type Reservoir in the Aircraft)

  • 김정식;유한식;박동기
    • 한국기계가공학회지
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    • 제12권5호
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    • pp.170-175
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    • 2013
  • For this study, the domestically developed bootstrap reservoir of the aircraft is set up in accordance with the temperature and humidity conditions depicted on the qualification test, and the variation in the internal pressure of the bootstrap reservoir of the aircraft is examined. The study shows that the bootstrap reservoir has less variation in the internal pressure at room temperature than at low temperature($-40^{\circ}C$). As a result, the internal pressure can be maintained stably when the temperature of working fluid in the bootstrap reservoir and the atmosphere environment is over room temperature($25^{\circ}C$). Therefore the keeping of temperature above room temperature is very important to operate the bootstrap reservoir of the aircraft properly.

전기아연도금용 강판의 상온 탈지 조건 연구 (Study on the Room Temperature Degreasing Conditions of Steel Sheet for Electrogalvanizing)

  • 박태연;김채원;양수미;홍희준;최인철
    • 열처리공학회지
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    • 제37권1호
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    • pp.16-22
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    • 2024
  • The conventional degreasing process involves removing oil and contaminants at temperatures above 80℃, resulting in excessive energy consumption, increased process costs, and environmental issues. In this study, we aimed to find the optimal degreasing conditions for the pre-treatment process of electro-galvanizing cold-rolled steel sheets, conducted efficiently at room temperature without the need for a separate heating device. To achieve this, we developed a room temperature degreasing solution and a brush-type degreasing tool, aiming to reduce energy consumption and normalize the decrease in degreasing efficiency caused by temperature reduction. Alkaline degreasing solution were prepared using KOH, SiO2, NaOH, Na2CO3, and Sodium Lauryl Sulfate, with KOH and NaOH as the main components. To enhance the degreasing performance at room temperature, we manufactured additives including sodium oleate, sodium stearate, sodium palmitate, sodium lauryl sulfate, ammonium lauryl sulfate, silicone emulsion, and EDTA-Na. Room temperature additives were added to the alkaline degreasing solution in quantities ranging from 0.1 to 20 wt.%, and the uniformity of degreasing and the adhesion of the galvanized layer were evaluated through Dyne Test, T-bending Test, OM, SEM, and EDS analyses. The results indicated that the optimal degreasing solution composition consisted of NaOH (30 g/L), Na2CO3 (30 g/L), SLS (6 g/L), and room temperature additives (≤1 wt%).

Development of Nano Crystal Embedded Polymorphous Silicon Thin Film by Neutral Beam Assisted CVD Process at Room Temperature

  • Jang, Jin-Nyoung;Lee, Dong-Hyeok;So, Hyun-Wook;Yoo, Suk-Jae;Lee, Bon-Ju;Hong, Mun-Pyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.171-171
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    • 2012
  • Neutral beam assisted chemical vapor deposition (NBa-CVD) process has been developed as a nove,l room temperature deposition process for the light-soaking free nano-crystalline silicon (nc-Si) thin films including intrinsic and n-type doped thin film. During formation of nc-Si thin films by the NBa-CVD process with silicon reflector at room temperature, the energetic particles enhance doping efficiency and crystalline phase in nc-Si thin films without additional heating at substrate. The effects of incident NB energy controlled by the reflector bias have been confirmed by Raman spectra analysis. Additionally, TEM images show uniform nc-Si grains which imbedded amorphous phase without incubation layer. The nc-Si films by the NBa-CVD are hardly degenerated by light soaking; the degradations of photoconductivity were just a few percents before and after light irradiation.

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기계적 합금화에 의한 $NiAl-Fe-AIN-Al_2O_3$ 합금분말의 제조, 열간 성형, 이차재결정화 및 기계적 성질 평가에 관한 연구 (A Study of Production, Hot Consolidation, Secondary Recrystallization and Mechnical Property Assesment of Mechanically Alloyed $NiAl-Fe-AiN-Al_2O_3$)

  • 이순철
    • 한국분말재료학회지
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    • 제6권1호
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    • pp.111-118
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    • 1999
  • Ni(Fe)Al powders containing a homogeneous distribution of the in-situ formed AIN and $Al_2O_3$ dispersoids have been produced by mechanical alloying process in a controlled atmosphere using high energy attrition mill. The powders have been successfully consolidated by hot extrusion process. The phase information investigated by TEM and XRD analysis reveals that Fe can be soluble up to 20% to the NiAl phase ($\beta$) at room temperature after MA process. Subsequent thermomechanical treatment under specific condition has been tried to induce secondary recrystallization (SRx) to improve high temperature properties, however, the clear evidence of SRx was not obtained in this material. Mechanical properties in term of strength at room temperature as well as at high temperatures have been improved by the addition pf AIN, and the room temperature ductility has been shown to be improved after heat treatment, presumably due to the precipitation of second phase of $\alpha$ in this material.

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바닥복사난방의 실별제어시스템에 관한 열성능 평가 (An Evaluation on the Thermal Performance of the Room Control System for Radiant Floor Heating)

  • 석호태;김오봉;조영흠;김광우;여명석
    • 한국주거학회논문집
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    • 제14권5호
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    • pp.75-82
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    • 2003
  • In this study, the thermal performance of the room control system is analyzed in terms of control performance, potential for coil expansion and energy consumption through experiments comparing the individual room control system and an existing system. The results of this study show that the existing system is not able to supply design water flow rate and does not accurately maintain the set point temperature in each room. However, the individual room control system can set a room air temperature for each room, for it is able to supply design water flow and accurately control the set point temperature in each room and can reduce the energy consumption compared to the existing system. Moreover, the individual room control system can reduce the number of coil division zone and facilitates the construction process, because it can extend the length of the coil division.