• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.63-66
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• 2005

Nanoimprint lithography (NIL) process at room temperature has been newly proposed in recent years to overcome the shape accuracy and sticking problem induced in a conventional NIL process. Success of the room temperature NIL relies on the accurate understand of the mechanical behavior of the polymer. Since a conventional NIL process has to heat a polymer above the glass transition temperature to deform the physical shape of the polymer with a mold pattern, viscoelastic property of polymer have major effect on the NIL process. However, rate dependent behavior of polymer is important in the room temperature NIL process because a mold with engraved patterns is rapidly pressed onto a substrate coated with the polymer by the hydraulic equipment. In this paper, finite element analysis of the room temperature NIL process is performed with considering the strain rate dependent behavior of the polymer. The analyses with the variation of imprinting speed and imprinting pattern are carried out in order to investigate the effect of such process parameters on the room temperature NIL process. The analyses results show that the deformed shape and imprint force is quite different with the variation of punch speed because the dynamic behavior of the polymer is considered with the rate dependent plasticity model. The results provide a guideline for the determination of process conditions in the room temperature NIL process.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.6-8
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• 2005

The optical and electrical properties of indium tin oxide (ITO) thin films deposited at room temperature can be substantially enhanced by adopting a two-step process. In the first step, the films (50 nm thick) were grown by pulsed laser deposition (PLD) on glass substrate at room temperature and quickly annealed at $400^{\circ}C$ in nitrogen ambient for 1 minute by using rapid thermal annealing method. The process was completed by additional deposition (150 nm thick) on annealed film at room temperature. High quality ITO films grown by two-step process at room temperature could be obtained with the resistivity of $3.02{\times}10^{-4}{\Omega}cm$, the carrier mobility of 32.07 $cm^2/Vs$, and the transparency above 90 % in visible region mainly due to the enhancement of the film crystallinity and the increase of grain size.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.186-189
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• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than $40^{\circ}C$. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.1082-1086
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• 2004

Since the sheet forming of Mg alloy has many difficulties due to the low formability, many forming conditions need to be selected properly. Especially, the process variables should be investigated to increase the formability, such as, forming temperature. In this paper, the effects of forming process variables has been investigated using the bending and deep drawing process. A simple U-bending designed for mobile part could be formed in room temperature and springback amounts are surveyed. On the other hand, square cup part couldn't be formed in room temperature due to the low formability. Therefore, the effects of forming temperature are investigated in deep drawing process for square cup part. As a experimental and FEM results, the optimum forming temperature is presence and formability in a higher temperature is less than that of lower temperature. Above experimental results are compared with the FEM analysis and well coincided with the experimental results. Therefore, more detail investigations could be progressed to select more appropriate process conditions by the FEA.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.5
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• pp.170-175
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• 2013

For this study, the domestically developed bootstrap reservoir of the aircraft is set up in accordance with the temperature and humidity conditions depicted on the qualification test, and the variation in the internal pressure of the bootstrap reservoir of the aircraft is examined. The study shows that the bootstrap reservoir has less variation in the internal pressure at room temperature than at low temperature($-40^{\circ}C$). As a result, the internal pressure can be maintained stably when the temperature of working fluid in the bootstrap reservoir and the atmosphere environment is over room temperature($25^{\circ}C$). Therefore the keeping of temperature above room temperature is very important to operate the bootstrap reservoir of the aircraft properly.

• Journal of the Korean Society for Heat Treatment
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• v.37 no.1
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• pp.16-22
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• 2024

The conventional degreasing process involves removing oil and contaminants at temperatures above 80℃, resulting in excessive energy consumption, increased process costs, and environmental issues. In this study, we aimed to find the optimal degreasing conditions for the pre-treatment process of electro-galvanizing cold-rolled steel sheets, conducted efficiently at room temperature without the need for a separate heating device. To achieve this, we developed a room temperature degreasing solution and a brush-type degreasing tool, aiming to reduce energy consumption and normalize the decrease in degreasing efficiency caused by temperature reduction. Alkaline degreasing solution were prepared using KOH, SiO₂, NaOH, Na₂CO₃, and Sodium Lauryl Sulfate, with KOH and NaOH as the main components. To enhance the degreasing performance at room temperature, we manufactured additives including sodium oleate, sodium stearate, sodium palmitate, sodium lauryl sulfate, ammonium lauryl sulfate, silicone emulsion, and EDTA-Na. Room temperature additives were added to the alkaline degreasing solution in quantities ranging from 0.1 to 20 wt.%, and the uniformity of degreasing and the adhesion of the galvanized layer were evaluated through Dyne Test, T-bending Test, OM, SEM, and EDS analyses. The results indicated that the optimal degreasing solution composition consisted of NaOH (30 g/L), Na₂CO₃ (30 g/L), SLS (6 g/L), and room temperature additives (≤1 wt%).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.171-171
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• 2012

Neutral beam assisted chemical vapor deposition (NBa-CVD) process has been developed as a nove,l room temperature deposition process for the light-soaking free nano-crystalline silicon (nc-Si) thin films including intrinsic and n-type doped thin film. During formation of nc-Si thin films by the NBa-CVD process with silicon reflector at room temperature, the energetic particles enhance doping efficiency and crystalline phase in nc-Si thin films without additional heating at substrate. The effects of incident NB energy controlled by the reflector bias have been confirmed by Raman spectra analysis. Additionally, TEM images show uniform nc-Si grains which imbedded amorphous phase without incubation layer. The nc-Si films by the NBa-CVD are hardly degenerated by light soaking; the degradations of photoconductivity were just a few percents before and after light irradiation.

• Journal of Powder Materials
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• v.6 no.1
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• pp.111-118
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• 1999

Ni(Fe)Al powders containing a homogeneous distribution of the in-situ formed AIN and $Al_2O_3$ dispersoids have been produced by mechanical alloying process in a controlled atmosphere using high energy attrition mill. The powders have been successfully consolidated by hot extrusion process. The phase information investigated by TEM and XRD analysis reveals that Fe can be soluble up to 20% to the NiAl phase ($\beta$) at room temperature after MA process. Subsequent thermomechanical treatment under specific condition has been tried to induce secondary recrystallization (SRx) to improve high temperature properties, however, the clear evidence of SRx was not obtained in this material. Mechanical properties in term of strength at room temperature as well as at high temperatures have been improved by the addition pf AIN, and the room temperature ductility has been shown to be improved after heat treatment, presumably due to the precipitation of second phase of $\alpha$ in this material.

• Journal of the Korean housing association
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• v.14 no.5
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• pp.75-82
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• 2003

In this study, the thermal performance of the room control system is analyzed in terms of control performance, potential for coil expansion and energy consumption through experiments comparing the individual room control system and an existing system. The results of this study show that the existing system is not able to supply design water flow rate and does not accurately maintain the set point temperature in each room. However, the individual room control system can set a room air temperature for each room, for it is able to supply design water flow and accurately control the set point temperature in each room and can reduce the energy consumption compared to the existing system. Moreover, the individual room control system can reduce the number of coil division zone and facilitates the construction process, because it can extend the length of the coil division.