• Title/Summary/Keyword: Rhombohedral

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Space Group $R\={3}c$ = $R\={3}2/c$(167) and the Crystal Structure of Tris(1,2,3,4-tetraphenylbuta-1,3-dienyl)cyclotriphosphazene (Space Group $R\={3}c$(167)과 Tris(1,2,3,4-tetraphenylbuta-1,3-dienyl)cyclotriphosphazene의 結晶構造)

  • Kim, Young-Sang;Ko, Jae-Jung;Kang, Sang-Ook;Lee, Young-Joo;Kang, Eu-Gene;Han, Won-Sik;Park, Young-Soo;Suh, Il-Hwan
    • Korean Journal of Crystallography
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    • v.15 no.1
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    • pp.9-17
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    • 2004
  • There are 25 space groups in the trigonal system. Eighteen out of them have a lattice letter P displaying only hexagonal axes, wherease the remaining seven rhombohedral space groups R3(146), $R\={3}$(148), R32(155), R3m(160), R3c(161), $R\={3}m$(166) and $R\={3}c$(167) are described with two corrdinate systems, first with hexagonal axes having three lattice points (0, 0, 0), (2/3, 1/3, 1/3), (1/3, 2/3, 2/3) and second with primitive rhombohedral axes. In this paper, the space group $R\={3}c$ is discussed and the crystal structure of a compound, tris(1,2,3,4-tetraphenylbuta-1,3-dienyl)cyclotriphosphazene, $C_{84}H_{60}N_3P_3$, belonging to the space group $R\={3}c$ is elucidated with both hexagonal and rhombohedral cells.

Permittivity in Tetragonal and Rhombohedral Phase PZT Ceramics after Poling (입방정과 사방정 PZT 요업체에서의 분극처리 후 유전율)

  • 정훈택;김호기
    • Journal of the Korean Ceramic Society
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    • v.29 no.7
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    • pp.572-576
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    • 1992
  • Dielectric constant of ferroelectric ceramics with poling is important in relation to the mechanism of dielectric breakdown. From the research about the dielectric constant variation with poling in tetragonal and rhombohedral phase PZT ceramics, it is known that the dielectric constant after poling is determined by competing effects between increasing effects (compressive stress induced by electrostriction of piezoelectric effects) and decreasing increase in large grain size with poling is smaller than in small grain size.

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Dielectric and Piezoelectric Properties of "Lead-free" Piezoelectric Rhombohedral Ba(Ti0.92Zr0.08)O3 Single Crystals

  • Lee, Jong-Yeb;Oh, Hyun-Taek;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.53 no.2
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    • pp.171-177
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    • 2016
  • Rhombohedral $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.85, piezoelectric charge constant ($d_{33}$) of about 950 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 40 [${\times}10^{-3}Vm/N$]. Especially the $d_{33}$ of (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals was by about six times higher than that of their ceramics. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($d_{33}$, $g_{33}$) are higher than those of soft PZT ceramics, it is expected that rhombohedral (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications such as actuator, sensor, and transducer.

Structural analysis and photoluminescent study of thin film rhombohedral zinc orthosilicate doped with manganese

  • Yoon, Kyung-Ho;Kim, Joo-Han
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.114-114
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    • 2010
  • In this study, structural properties and photoluminescent characteristics of thin film rhombohedral zinc orthosilicate doped with manganese ($Zn_2SiO_4:Mn$) were investigated. The $Zn_2SiO_4:Mn$ films showed a pronounced absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone (0.935). The $Zn_2SiO_4:Mn$ films were composed of rhombohedral polycrystalline grains with random crystallographic orientation. The broad-band photoluminescence emission peaked at around 525 nm was observed from the $Zn_2SiO_4:Mn$ films, which was ascribed to the radiative relaxation from the $^4T_1$ lowest excitation state to $^6A_1$ ground state of 3d5 electrons in divalent manganese ion. The excitation band exhibited a peak maximum at 259 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent Mn ion in the $Zn_2SiO_4$ system.

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The Deposition of Rhombohedral - Boron Phosphide at Low Temperature and its Analysis of Physical Properties (Rhombohedral - Boron Phosphide 의 저온 증착과 물성분석)

  • Hong, Kuen-Kee;Yun, Yo-Chul;Bok, Eun-Kyung;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.27-30
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    • 2002
  • Boron Phosphide films were deposited on the glass substrate at the low temperature, $550^{\circ}C$, $480^{\circ}C$, by the reaction of $B_{2}H_{6}$, with $PH_{3}$ using CVD. The reactant gas rates were 50 cc/min and 20 cc/min for $B_{2}H_{6}$, 50 cc/min and 40 cc/min for $PH_{3}$ and $1.5\ell$/min for $N_{2}$ carrier gas. The films were annealed for 1hour, 3hours in $N_{2}$ ambient at $550^{\circ}C$ and $400^{\circ}C$. The deposition rate was $1000{\AA}$/min and the refractive index of film was 2.6. From results of XRD measurement the films have the preferred orientation of (1 0 1). For as deposited the film, the data of VIS spectrophotometer show 75.49%, 76.71% for 1hr-annealed and 86.4% for 3hrs-annealed. From AFM datas the surface condition of obtained films are was shown $73{\AA}$, $88.9{\AA}$ and $220{\AA}$ for as-deposited, for 1hr-annealed and for 3hr annealed, respectively.

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Dielectric and Remnant Mechanical Properties Due to Cyclic Stress in PZT Ceramics (반복응력에 따른 PZT 세라믹스의 유전 및 잔류 기계적 특성)

  • 태원필;김송희
    • Journal of the Korean Ceramic Society
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    • v.31 no.8
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    • pp.829-834
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    • 1994
  • The aim of this study is to investigate the changes in dielectric properties, Young's modulus and remnant compressive strength with compressive cyclic loading in PZT of tetragonal, MPB and rhombohedral composition. Higher relative dielectric constants appeared in the poled condition than the unpoled condition for all the compositions. After poling treatment remarkably higher relative dielectric constants were observed particularly in MPB, tetragonal compositions. Until five percent of the expected fatigue life was exhausted, the dielectric constant increased with compressive cyclic stress in MPB and rhombohedral while it remained nearly constant in tetragonal. During the subsequent compressive cyclic stress, dielectric constant decreased in all the three compositions. As the compressive cyclic stress is applied the change of Young's modulus was coincided with the change of remnant compressive strength.

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Effect of Calcining Temperature on Sintering Characteristics of PZT (하소온도가 PZT의 소결특성에 미치는 영향)

  • 정수태;이우일;조상희
    • Journal of the Korean Ceramic Society
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    • v.22 no.1
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    • pp.40-46
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    • 1985
  • The effect of calcining temperature ranged from $700^{\circ}C$ to 110$0^{\circ}C$ on sintering characteristics of morphotropic $Pb(Zr_{0.53}Ti_{0.47})O_3 doped with $Nb_2O_5$ has been investigated. The ratio of sintered grain size to calcined grain size decreased as the calcining temperature increased. The hardness as well as the sintered density of the samples reached a maximum at about 90$0^{\circ}C$. The X-ray diffraction pattern of the sintered sample showed both tetragonal and rhombohedral phases. The tetragonal phases intensity increased with the calcining temperature going through a maximum at about 90$0^{\circ}C$ while the rhombohedral phase intensity remained uneffected. The both intensity were about the same at 90$0^{\circ}C$ The dielectric constant of the sintered samples reached a maximum um while the dielectric dissipation factor showed a minimum at the calcining temperature of about 100$0^{\circ}C$.

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Electric and Magnetic Properties of Hetero-Epitaxially Deposited BiFeO3 Thin Films (이종에피에 의해 증착한 BiFeO3 박막의 전기 및 자기특성)

  • Lee Eun Gu;Viehland D.
    • Korean Journal of Materials Research
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    • v.14 no.10
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    • pp.707-712
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    • 2004
  • $BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for hetero-epitaxially grown $BiFeO_3$ thin films comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

The Characteristics of Piezoelectric Strian Constants on PNN-PZ-PT Ceramics (PNN-PZ-PT계 세라믹스의 압전변위특성)

  • 정수태;남효덕;조상희
    • Journal of the Korean Ceramic Society
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    • v.26 no.6
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    • pp.802-810
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    • 1989
  • The temperature dependence of piezoelectric strain constant and the electric field induced strain are investigated as a function of PT in 0.5[xPT-(1-x)PZ]-0.5PNN ceramics. The piezoelectric strain constant d31 has the highest value(360$\times$10-12m/V) at PT=0.68. The temperature dependence of d31 is improved as Curie temperature of sample is increased, and the electric field dependence of induced strain is decreased with the coercive field increased. This ceramic system shows both piezoelectric effect and electrostrictive effect under the applied electric field. The piezoelectric of tetragonal phase is higher than that of rhombohedral phase, and the magnitude of electrostrictive constant is appeared in the order of morphotropic, rhombohedral and tetragonal phase. The piezoelectric strain constant with applied field must be considered theelectrostrictive effect due to 90$^{\circ}$domain wall displacements, and the displacement of bimorph type actuator agrees with the calulated value well.

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