• 제목/요약/키워드: Rhombohedral

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Space Group $R\={3}c$(167)과 Tris(1,2,3,4-tetraphenylbuta-1,3-dienyl)cyclotriphosphazene의 結晶構造 (Space Group $R\={3}c$ = $R\={3}2/c$(167) and the Crystal Structure of Tris(1,2,3,4-tetraphenylbuta-1,3-dienyl)cyclotriphosphazene)

  • 김영상;고재중;강상욱;이영주;강유진;한원식;박영수;서일환
    • 한국결정학회지
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    • 제15권1호
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    • pp.9-17
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    • 2004
  • Trigonal system에 屬한 25個 space group들 中 18個는 hexagonal axes만을 나타내는 lattice letter p로 表示되고, 나머지 7個의 rhombohedral space groups R3(146), $R\={3}$(148), R32(155), R3m(160), R3c(161), $R\={3}m$(166), $R\={3}c$(167)은 첫째 3개의 lattice points (0, 0, 0), (2/3, 1/3, 1/3), (1/3, 2/3, 2/3)를 갖는 hexagonal cell in obverse setting과 둘째 primitive rhombohedral cell의 두 가지로 表示된다. 本 論文에서는 space group $R\={3}c$(167)에 대하여 論한 後 이 space group에 屬한 化合物인 tris(1,2,3,4-tetraphenylbuta-1,3-dienyl)cyclotriphosphazene, $C_{84}H_{60}N_3P_3$의 構造를 hexagonal 및 rhombohedral cell 의 양쪽으로 糾明하여 發表하였다.

입방정과 사방정 PZT 요업체에서의 분극처리 후 유전율 (Permittivity in Tetragonal and Rhombohedral Phase PZT Ceramics after Poling)

  • 정훈택;김호기
    • 한국세라믹학회지
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    • 제29권7호
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    • pp.572-576
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    • 1992
  • Dielectric constant of ferroelectric ceramics with poling is important in relation to the mechanism of dielectric breakdown. From the research about the dielectric constant variation with poling in tetragonal and rhombohedral phase PZT ceramics, it is known that the dielectric constant after poling is determined by competing effects between increasing effects (compressive stress induced by electrostriction of piezoelectric effects) and decreasing increase in large grain size with poling is smaller than in small grain size.

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Dielectric and Piezoelectric Properties of "Lead-free" Piezoelectric Rhombohedral Ba(Ti0.92Zr0.08)O3 Single Crystals

  • Lee, Jong-Yeb;Oh, Hyun-Taek;Lee, Ho-Yong
    • 한국세라믹학회지
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    • 제53권2호
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    • pp.171-177
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    • 2016
  • Rhombohedral $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.85, piezoelectric charge constant ($d_{33}$) of about 950 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 40 [${\times}10^{-3}Vm/N$]. Especially the $d_{33}$ of (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals was by about six times higher than that of their ceramics. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($d_{33}$, $g_{33}$) are higher than those of soft PZT ceramics, it is expected that rhombohedral (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications such as actuator, sensor, and transducer.

Structural analysis and photoluminescent study of thin film rhombohedral zinc orthosilicate doped with manganese

  • Yoon, Kyung-Ho;Kim, Joo-Han
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.114-114
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    • 2010
  • In this study, structural properties and photoluminescent characteristics of thin film rhombohedral zinc orthosilicate doped with manganese ($Zn_2SiO_4:Mn$) were investigated. The $Zn_2SiO_4:Mn$ films showed a pronounced absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone (0.935). The $Zn_2SiO_4:Mn$ films were composed of rhombohedral polycrystalline grains with random crystallographic orientation. The broad-band photoluminescence emission peaked at around 525 nm was observed from the $Zn_2SiO_4:Mn$ films, which was ascribed to the radiative relaxation from the $^4T_1$ lowest excitation state to $^6A_1$ ground state of 3d5 electrons in divalent manganese ion. The excitation band exhibited a peak maximum at 259 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent Mn ion in the $Zn_2SiO_4$ system.

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Rhombohedral - Boron Phosphide 의 저온 증착과 물성분석 (The Deposition of Rhombohedral - Boron Phosphide at Low Temperature and its Analysis of Physical Properties)

  • 홍근기;윤여철;복은경;김철주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.27-30
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    • 2002
  • Boron Phosphide films were deposited on the glass substrate at the low temperature, $550^{\circ}C$, $480^{\circ}C$, by the reaction of $B_{2}H_{6}$, with $PH_{3}$ using CVD. The reactant gas rates were 50 cc/min and 20 cc/min for $B_{2}H_{6}$, 50 cc/min and 40 cc/min for $PH_{3}$ and $1.5\ell$/min for $N_{2}$ carrier gas. The films were annealed for 1hour, 3hours in $N_{2}$ ambient at $550^{\circ}C$ and $400^{\circ}C$. The deposition rate was $1000{\AA}$/min and the refractive index of film was 2.6. From results of XRD measurement the films have the preferred orientation of (1 0 1). For as deposited the film, the data of VIS spectrophotometer show 75.49%, 76.71% for 1hr-annealed and 86.4% for 3hrs-annealed. From AFM datas the surface condition of obtained films are was shown $73{\AA}$, $88.9{\AA}$ and $220{\AA}$ for as-deposited, for 1hr-annealed and for 3hr annealed, respectively.

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반복응력에 따른 PZT 세라믹스의 유전 및 잔류 기계적 특성 (Dielectric and Remnant Mechanical Properties Due to Cyclic Stress in PZT Ceramics)

  • 태원필;김송희
    • 한국세라믹학회지
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    • 제31권8호
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    • pp.829-834
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    • 1994
  • The aim of this study is to investigate the changes in dielectric properties, Young's modulus and remnant compressive strength with compressive cyclic loading in PZT of tetragonal, MPB and rhombohedral composition. Higher relative dielectric constants appeared in the poled condition than the unpoled condition for all the compositions. After poling treatment remarkably higher relative dielectric constants were observed particularly in MPB, tetragonal compositions. Until five percent of the expected fatigue life was exhausted, the dielectric constant increased with compressive cyclic stress in MPB and rhombohedral while it remained nearly constant in tetragonal. During the subsequent compressive cyclic stress, dielectric constant decreased in all the three compositions. As the compressive cyclic stress is applied the change of Young's modulus was coincided with the change of remnant compressive strength.

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하소온도가 PZT의 소결특성에 미치는 영향 (Effect of Calcining Temperature on Sintering Characteristics of PZT)

  • 정수태;이우일;조상희
    • 한국세라믹학회지
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    • 제22권1호
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    • pp.40-46
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    • 1985
  • The effect of calcining temperature ranged from $700^{\circ}C$ to 110$0^{\circ}C$ on sintering characteristics of morphotropic $Pb(Zr_{0.53}Ti_{0.47})O_3 doped with $Nb_2O_5$ has been investigated. The ratio of sintered grain size to calcined grain size decreased as the calcining temperature increased. The hardness as well as the sintered density of the samples reached a maximum at about 90$0^{\circ}C$. The X-ray diffraction pattern of the sintered sample showed both tetragonal and rhombohedral phases. The tetragonal phases intensity increased with the calcining temperature going through a maximum at about 90$0^{\circ}C$ while the rhombohedral phase intensity remained uneffected. The both intensity were about the same at 90$0^{\circ}C$ The dielectric constant of the sintered samples reached a maximum um while the dielectric dissipation factor showed a minimum at the calcining temperature of about 100$0^{\circ}C$.

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이종에피에 의해 증착한 BiFeO3 박막의 전기 및 자기특성 (Electric and Magnetic Properties of Hetero-Epitaxially Deposited BiFeO3 Thin Films)

  • 이은구
    • 한국재료학회지
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    • 제14권10호
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    • pp.707-712
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    • 2004
  • $BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for hetero-epitaxially grown $BiFeO_3$ thin films comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

PNN-PZ-PT계 세라믹스의 압전변위특성 (The Characteristics of Piezoelectric Strian Constants on PNN-PZ-PT Ceramics)

  • 정수태;남효덕;조상희
    • 한국세라믹학회지
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    • 제26권6호
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    • pp.802-810
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    • 1989
  • The temperature dependence of piezoelectric strain constant and the electric field induced strain are investigated as a function of PT in 0.5[xPT-(1-x)PZ]-0.5PNN ceramics. The piezoelectric strain constant d31 has the highest value(360$\times$10-12m/V) at PT=0.68. The temperature dependence of d31 is improved as Curie temperature of sample is increased, and the electric field dependence of induced strain is decreased with the coercive field increased. This ceramic system shows both piezoelectric effect and electrostrictive effect under the applied electric field. The piezoelectric of tetragonal phase is higher than that of rhombohedral phase, and the magnitude of electrostrictive constant is appeared in the order of morphotropic, rhombohedral and tetragonal phase. The piezoelectric strain constant with applied field must be considered theelectrostrictive effect due to 90$^{\circ}$domain wall displacements, and the displacement of bimorph type actuator agrees with the calulated value well.

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