• Title/Summary/Keyword: Resistors

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The Hardware Implementation of Chua's Oscillator (Chua 발진기 회로의 하드웨어 구현)

  • 배영철;강명구
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.3
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    • pp.553-561
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    • 2001
  • Chua's oscillator is a simple electronic circuit which exhibits a variety of bifurcation phenomena and attractors, It consist of two capacitors, an inductor, two linear resistors, and a nonlinear resistor. When the circuit exhibits chaotic signals, the nonlinear resistor of Chua's oscillator may have six different voltage - current characteristics. In this paper, the design methodology for practical implementation of the nonlinear resistors which have all these characteristics is described. In addition, the effectivness of result is shown by not only the computer simulation but also the experimental test.

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Contruction and Performance Evaluation of the Surge Arrester for Transmission Class (송전급 피뢰기의 구조와 성능평가)

  • Kim, S.S.;Choi, I.S.;Cho, H.G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.890-893
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    • 2002
  • Since 1970s, varistors using metal-oxide resistors have been applied to Gapless surge arresters for power system. In the paper, the structure of metal-oxide surge arresters without gaps for 362kV GIS which is developed the first in korea has been introduced. And the main evaluation items for the metal-oxide resistors which are reference voltage test, residual voltage test, long duration current impulse withstand test and operating duty test is tested and evaluated.

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Fabrication and Reliability Properties of Ni-Cr Alloy Thin Film Resistors (Ni-Cr계 합금을 이용한 박막저항의 제작 및 신뢰성)

  • Lee, Boong-Joo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.57-62
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    • 2008
  • From the progressing results, it was found that thin film using 52 wt% Ni - 38 wt% Cr - 3 wt% Al - 4 wt% Mn - 3 wt% Si target has good characteristics for low TCR (temperature coefficients of resistance) and high resistivity. The optimum sputtering condition was DC 250 W, 5 mtorr, and 50 sccm and the proper annealing condition was $350^{\circ}C$/3.5 hr in air atmosphere. At these fabricated conditions, thin film resistors with TCR values of less than ${\pm}10ppm/^{\circ}C$ were obtained. The TCR of the packaged-samples made at proper fabrication conditions was $-3{\sim}15ppm/^{\circ}C$ after the thermal cycling and $-20{\sim}180ppm/^{\circ}C$ after PCT (pressure cooker test), we could confirm reliability for the thin film resistor and find the need for enduring research about packaging method.

Microstructure and Electrical Properties of $RuO_2$ System Thick Film Resistors ($RuO_2$계 후막저항체의 미세구조와 전기적성질)

  • 구본급;김호기
    • Journal of the Korean Ceramic Society
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    • v.27 no.3
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    • pp.337-344
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    • 1990
  • As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.

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A Study of Deflection of Ceramic Diaphragm for a Pressure Sensor (후막저항의 기하학적 위치에 따른 압력센서의 출력특성 고찰)

  • Lee, Seong-Jae;Lee, Deuk-Young;Ha, Young-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.884-887
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    • 2003
  • Strain gages were widely used transducers. Essentially a strain gage was an electric element to which an appropriate type was attached. Strain was sensed by gages and provided electrical output proportional to applied forced. This paper describes the recent development of a thick film strain gage ceramic pressure sensors. The thick film resistors as strain gage in the Wheatstone bridge were fabricated with a novel mixture of ruthenium. The thick-film technology of resistors were printed on the ceramic diaphragm back side by screen printing and cured at $850^{\circ}C$. The mechanical measurements were performed with the computer simulation results(ANSYS 5.1). The output sensitivity was 1.2mV/V, of which max. nonlinearity was less than 0.29%, hysteresis was less than 0.38%FS.

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The Development of an accurate, automated measurement system of high value resistors (고저항 정밀측정용 자동화 시스템의 제작)

  • Ryu, Je-Cheon;Kang, Jeon-Hong;Ryu, Kwon-Sang;Yu, Kwang-Min
    • Proceedings of the KIEE Conference
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    • 1999.07b
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    • pp.806-808
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    • 1999
  • An automatic measurement system of high value resistance standards($10M{\Omega}$ and $1G{\Omega}$) was developed. A system has been assembled with programmable do calibrators in two of the arms. An electrometer is used to measure the difference in currents flowing through the remaining two arms of the bridge consisting of unknown and standard resistors. Type A standard uncertainty was 2ppm in the $10M{\Omega}$, 1 ppm in the $1G{\Omega}$.

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Compensation of Resistance Variation due to Temperature in Voltage Measurement System (온도에 따른 저항 변화를 보상한 전압 측정 방법)

  • Min, Sang-Jun;Kim, Jin-Sung
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.11
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    • pp.1174-1177
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    • 2012
  • In voltage measurement by using voltage divider with series resistors, error is generated caused by the variation of resistance. In order to reduce these errors, the hardware cost tends to increase in the previous works. In the proposed method, three resistors are used for the voltage divider of which the organization is adjusted by using switches. Three voltages are measured and the ratio of resistance is calculated based on the measured voltages. Since the resistance ratio is calculated by measuring voltages and additional hardware cost is minimal, the voltage can be measured with high accuracy and low cost. Experimental results show that the mean absolute error is 12.1 mV when the input voltage ranges from 5 V to 50 V.

A ladder type 8th-order elliptic low-pass filter using transadmittance amplifiers (트랜스어드미턴스 증폭기를 이용한 사다리형 8차 일립틱 저역-통과 여파기)

  • 김종필;박지만;정원섭
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.8
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    • pp.42-51
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    • 1998
  • An 8th-order elliptic low-pass filter with cutoff frequency of 3.13kHz is presented. The design procedure is based on teh 1/s impedance transformation which is applied to a minimum capacitor LC ladder network.The tranformed network is implemented with resistors and high Q frequency-dependent negative resistors (FDNR's). The high Q FDNR is realized with two transadmittance amplifiers. Detailed SPICE simulations show that the iflter has pass-band ripple of 0.18dB, stop-band attenuation over 100dB, cutoff frequency of 3.13 khz, and cutoff frequency temperature coefficient of 8.5ppm/.deg. C at supply voltage of .+-.5V.

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Comparison of Temperature Characteristics Between Single and Poly-crystalline Silicon Pressure Sensor (단결정 및 다결정 실리콘 압력센서의 온도특성 비교)

  • Park, Sung-June;Park, Se-Kwang
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.342-344
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    • 1995
  • Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

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An Effective Utilization of Regenerative Power According to the Output Voltage of Substations in the DC Electric Railways (직류전기철도 시스템에 있어서의 변전소 송출전압에 따른 회생전력유효이용)

  • Kim, Yang-Mo
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.39 no.2
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    • pp.149-156
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    • 1990
  • In DC electric railway systems, the feeding currrnt is not permitted to flow backward in almost all the substations and the pantograph voltages at the regenerating cars rise extremely by the voltage drop of the resistance of the feeder line. In order to prevent the overrise of the pantograph voltage in power regenerating cars, the squeezing circuits for the regenerative current are equipped and this leads to double losses, which are an extra worn-out of the brake-shoes and an ineffective use of regenerative power. In this study, the insertion of resistors in the feeder line system is proposed as a possible method for the effective utilization of the regenerative power in the electric railways. Also it is investigated how the output voltages of substations affect the effective use of regenertive capability. The investigation results show that the energy savings and the reduction of the worn-out of the brake-shoe can be achieved at the same time by the insertion of resistors in the feeder line system.

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