• Journal of the Korea institute for structural maintenance and inspection
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• v.18 no.1
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• pp.128-137
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• 2014

Sprayed fire resistive materials are mainly used at steel structures to satisfy fireproof construction standard. However, the regulations on bond strength have been not considered with the exception of structures in the nuclear power plants, although it is an important factor showing material properties. Therefore, this paper suggested guidelines for bond strength of sprayed fire resistive materials used in the substation, by measuring bond strength according to aging of structures and impact loading considering environment of substations. It is judged that the bond strength suggested in this paper is the minimum value because it was measured from specimens widely used.

• Smart Structures and Systems
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• v.18 no.2
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• pp.335-354
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• 2016

This contribution presents an extended one-dimensional theory for piezoelectric beam-type structures with non-ideal electrodes. For these types of electrodes the equipotential area condition is not satisfied. The main motivation of our research is originated from passive vibration control: when an elastic structure is covered by several piezoelectric patches that are linked via resistances and inductances, vibrational energy is efficiently dissipated if the electric network is properly designed. Assuming infinitely small piezoelectric patches that are connected by an infinite number of electrical, in particular resistive and inductive elements, one obtains the Telegrapher's equation for the voltage across the piezoelectric transducer. Embedding this outcome into the framework of Bernoulli-Euler, the final equations are coupled to the wave equations for the longitudinal motion of a bar and to the partial differential equations for the lateral motion of the beam. We present results for the wave propagation of a longitudinal bar for several types of electrode properties. The frequency spectra are computed (phase angle, wave number, wave speed), which point out the effect of resistive and inductive electrodes on wave characteristics. Our results show that electrical damping due to the resistivity of the electrodes is different from internal (=strain velocity dependent) or external (=velocity dependent) mechanical damping. Finally, results are presented, when the structure is excited by a harmonic single force, yielding that resistive-inductive electrodes are suitable candidates for passive vibration control that might be of great interest for practical applications in the future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.53-58
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• 2022

One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.243.1-243.1
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• 2011

We demonstrate a facile and robust layer-by-layer (LbL) assembly method for the fabrication of nonvolatile resistive switching memory (NRSM) devices based on superparamagnetic nanocomposite multilayers, which allows the highly enhanced magnetic and resistive switching memory properties as well as the dense and homogeneous adsorption of nanoparticles, via nucleophilic substitution reaction (NSR) in nonpolar solvent. Superparamagnetic iron oxide nanoparticles (MP) of about size 12 nm (or 7 nm) synthesized with oleic acid (OA) in nonpolar solvent could be converted into 2-bromo-2-methylpropionic acid (BMPA)-stabilized iron oxide nanoparticles (BMPA-MP) by stabilizer exchange without change of solvent polarity. In addition, bromo groups of BMPA-MP could be connected with highly branched amine groups of poly (amidoamine) dendrimer (PAMA) in ethanol by NSR of between bromo and amine groups. Based on these results, nanocomposite multilayers using LbL assembly could be fabricated in nonpolar solvent by NSR of between BMPA-MP and PAMA without any additional phase transfer of MP for conventional LbL assembly. These resulting superparamagnetic multilayers displayed highly improved magnetic and resistive switching memory properties in comparison with those of multilayers based on water-dispersible MP. Furthermore, NRSM devices, which were fabricated by LbL assembly method under atmospheric conditions, exhibited the outstanding performances such as long-term stability, fast switching speed and high ON/OFF ratio comparable to that of conventional inorganic NRSM devices produced by vacuum deposition.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2000.02a
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• pp.91-94
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• 2000

We fabricated resistive super- conducting fault current limiters (SFCL) based on YBCO thin films grown on 2" diameter $Al_{2}O_{3}$ substrates. Two SFCLs with nearly identical properties. two SFCLs with nearly identical properties were connected in series to investigate simultaneous quenching. There was a difference of several half cycles in their quench starting time, although the difference was not more than 0.1 msec when they were operated separately. This imbalance was removed by connecting a shunt resistor to an SFCL in parallel. Increased power input at high voltages also reduced the initial imbalance in power dissipation. Further efforts on the simultaneous quench in SFCLs connected in series are on the way through methods such as the artificial control of quench speed.peed.

• Journal of Sensor Science and Technology
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• v.32 no.1
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• pp.39-43
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• 2023

Microscale thermophysical property measurements of liquids have been developed considering the increasing interest in the thermal management of cooling systems and energy storage/transportation systems. To accurately predict the heat transfer performance, information on the thermal conductivity, heat capacity, and density is required. However, a simultaneous analysis of the thermophysical properties of small-volume liquids has rarely been considered. Recently, we proposed a new methodology to simultaneously analyze the aforementioned three intrinsic properties using heater-integrated fluidic resonators (HFRs) in an atmospheric pressure environment comprising a microchannel, resistive heater/thermometer, and mechanical resonator. Typically, the thermal conductivity and volumetric heat capacity are measured based on a temperature response resulting from heating using a resistive thermometer, and the specific heat capacity can be obtained from the volumetric heat capacity by using a resonance densitometer. In this study, we analyze methods to improve the thermophysical property measurement performance using HFRs, focusing on the effect of the ambience around the sensor. The analytical method is validated using a numerical analysis, whose results agree well with preliminary experimental results. In a vacuum environment, the thermal conductivity measurement performance is enhanced, except for the thermal conductivity range of most gases, and the sensitivity of the specific heat capacity measurement is enhanced owing to an increase in the time constant.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.183.2-183.2
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2016.11a
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• pp.140-140
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• 2016

• Journal of Applied Reliability
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• v.16 no.1
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• pp.1-6
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• 2016

Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.