• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.469-475
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• 2003

Resistive leakage current flowing ZnO blocks increases with its ages, which is an important indicator of arrester deterioration. However, a complicated circuitry is essential to measure the resistive leakage current included in the total leakage current, and the difficult handling of the measurement makes few applications to the fields. In this paper, we propose a resistive leakage current measurement device which is composed of a current detection circuit and an analysis program operated on a microprocessor. The device samples the input leakage current waveform digitally, and discriminate the zero-cross and the peak point of the waveform to analyze the current amplitude vs. phase. The capacitive leakage current is then eliminated from the total leakage current by using an algorithm to extract the resistive leakage current only. Also, the device can be operated automatically and manually to analyze the resistive leakage current even when the leakage current waveform is distorted due to various types of arrester deterioration. To estimate the performance of the device, we carried out a test on ZnO blocks and lightning arresters. From the results, it is confirmed that the device could analyze most parameters needed for the arrester diagnostics such as total leakage current. resistive leakage current, and the $3^rd$ harmonic leakage current.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.32-43
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• 2023

Resistive Random Access Memory (RRAM), based on resistive switching characteristics, is emerging as a next-generation memory device capable of efficiently processing large amounts of data through its fast operation speed, simple device structure, and high-density implementation. Interface type resistive switching offer the advantage of low operation currents without the need for a forming process. Especially, for RRAM devices based on transition metal oxides, various studies are underway to enhance the memory characteristics, including precise material composition control and improving the reliability and stability of the device. In this paper, we introduce various methods, such as doping of heterogeneous elements, formation of multilayer films, chemical composition adjustment, and surface treatment to prevent degradation of interface type resistive switching properties and enhance the device characteristics. Through these approaches, we propose the feasibility of implementing high-efficient next-generation non-volatile memory devices based on improved resistive switching properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.359-360
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• 2013

The effect of electrode and deposition methods on non-linear interfacial resistive switching in HfO2 based $250{\times}250$ nm2 cross-point device was studied. HfO2 based device has the interfacial resistive switching properties of non-linearity and self-compliance current switching. The operating current in HfO2 based device was increased with negatively increasing the heat of formation energy in top electrode. Also, it was investigated that the operating current in HfO2 based device was changed with deposition methods of O3 reactant ALD, H2O reactant ALD and dc reactive sputtering, resulting the magnitude of the operating current and on/off ratio in order of HfO2 films deposited by dc reactive sputtering, H2O reactant ALD, and O3 reactant ALD. To investigate the effect of electrode and deposition methods on operating current of non-linear interfacial resistive switching in the cross-point device, X-ray photoelectron spectroscopy was measured. Through the analysis of O 1s spectra, non-lattice oxygen concentration, which is closely related to oxygen vacancies, was increased in order of Pt, TiN, and Ti top electrodes and in order of O3 reactant ALD, H2O reactant ALD, and O3 reactant ALD, and dc reactive sputtering deposition method. From all results, non-lattice oxygen concentration in ultra-thin HfO2 films play a crucial role in the operating current and memory states (LRS & HRS) in the non-linear interfacial resistive switching.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.2
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• pp.221-226
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• 2009

In this paper, we analyzed form of flowing leakage current in electrical installation. Leakage current ($I_g$) is consisted of resistive leakage current($I_{gr}$), capacitive leakage current($I_{gc}$), and inductive leakage current($I_{gl}$). Resistive leakage current($I_{gr}$) is big occasion than capacitive leakage current($I_{gc}$) in system, Residual Current Protective Device(RCD) detects correctly leakage current. But,$I_{gc}$ is big occasion than $I_{gr}$, RCD is malfunctioned It is resistance to lead to electric fire in electrical device. We manufactured outlet that resistive leakage current detecting circuit is had. Manufactured outlet displayed performance exactly in leakage current of 5 mA Therefore, this product estimates that contribute on electric fire courtesy call.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.73-75
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• 2004

Resistive leakage current following arresters is an important indicator of ageing, but total leakage current and its harmonic analysis are widely used in diagnosing arrester soundness because of difficulties in measuring resistive leakage current. In this paper, we proposed a new method for measuring resistive leakage current, which is quite different from the conventional methods such as a self-cancel method and a synchronous rectification method. The proposed method is based on that the magnitudes of resistive leakage currents are equal at the same voltage level. To confirm the possibility of the proposed method. we fabricated a leakage current measurement device and designed an analysis program that can analyze resistive leakage current. Comparing with other methods. this technique does not need a complex circuitry and is very simple to complete.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.285-285
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• 2016

Resistive random access memory devices have been widely studied due to their high performance characteristics, such as high scalability, fast switching, and low power consumption. However, fluctuation in operational parameters remains a critical weakness that leads to device failures. Although the random formation and rupture of conducting filaments (CFs) in an oxide matrix during resistive switching processes have been proposed as the origin of such fluctuations, direct observations of the formation and rupture of CFs at the device scale during resistive switching processes have been limited by the lack of real-time large-area imaging methods. Here, a novel imaging method is proposed for monitoring CF formation and rupture across the whole area of a memory cell during resistive switching. A hybrid structure consisting of a resistive random access memory and a light-emitting diode enables real-time monitoring of CF configuration during various resistive switching processes including forming, semi-forming, stable/unstable set/reset switching, and repetitive set switching over 50 cycles.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1668-1670
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• 2003

This paper deals with a development of the high precise measuring device of resistive leakage current for the deterioration and diagnosis of ZnO arresters. The resistive leakage current increasing with time leads to a thermally unstable state that may even experience a disaster. So, the resistive leakage current can be used as an indicator to discriminate whether the ZnO arrester blocks is in good state or in bad. The resistive leakage current measuring system with an analysis program operated with micro-processor using the time delay addition method was designed and fabricated. The proposed measuring systems for the resistive leakage current can effectively be used to develop the techniques of forecasting the deterioration of ZnO arresters in electric power systems.⨀ᔌ?؀㔳㤮㈻Ԁ䭃䑎䷗ᜒं6〰Ԁ䭃䑎䴀

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• Journal of Applied Reliability
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• v.16 no.1
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• pp.1-6
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• 2016

Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.