• 한국재료학회지
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• 제19권10호
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• pp.544-549
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• 2009

Activated carbon (AC) with very large surface area has high capacitance per weight. However, such activation methods tend to suffer from low yields, below 50%, and are low in electrode density and capacitance per volume. Carbon NanoFibers (CNFs) had high surface area polarizability, high electrical conductivity and chemical stability, as well as extremely high mechanical strength and modulus, which make them an important material for electrochemical capacitors. The electrochemical properties of immobilized CNF electrodes were studied for use as in electrical double layer capacitor (EDLC) applications. Immobilized CNFs on Ni foam grown by thermal chemical vapor deposition (CVD) were successfully fabricated. CNFs had a uniform diameter range from 50 to 60 nm. Surface area was 56 m$^2$/g. CNF electrodes were compared with AC and multi wall carbon nanotube (MWNT) electrodes. The electrochemical performance of the various electrodes was examined with aqueous electrolyte of 2M KOH. Equivalent series resistance (ESR) of the CNF electrodes was lower than that of AC and MWNT electrodes. The specific capacitance of 47.5 F/g of the CNF electrodes was achieved with discharge current density of 1 mA/cm$^2$.

• 한국자기학회지
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• 제26권6호
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• pp.201-205
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• 2016

본 연구에서는 터널링 자기저항(TMR) 소자의 임피던스 스펙트럼을 측정하였으며, 절연체 장벽에 의한 터널링 저항($R_T$)과 터널링 전기 용량을 갖는 축전기($C_T$)가 병렬로 연결된 등가회로를 활용하여 TMR 소자의 완화 특성을 분석하였다. 두 자성체의 자화가 반평행 및 평행 상태일 때 모두 완화 주파수는 교류 전압에 따라 증가하는 경향을 보였다. 스펙트럼 측정 결과로부터 도출한 $R_T$는 TMR소자의 전형적인 바이어스 전압 의존성을 보였으나, $C_T$는 기하학적인 전기 용량에 비하여 약 4,500배 이상 증가하였다. 이러한 $C_T$의 거대한 증가는 TMR 소자의 고속 동작을 제한하는 요소로 작용하므로, 고속 동작을 요구하는 TMR 소자는 초고용량 $C_T$의 특성을 설계에 반영하여야 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.267-268
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• 2009

Resistance standards from 1 ${\Omega}$ to 100 $k{\Omega}$, with calculable frequency dependencies of up to 1 MHz, have been developed for the calibration of commercial inductance-capacitance-resistance (LCR) meters and impedance analyzers. The resistors are designed on the basis of single bifilar loops. The typical resistance change from dc to 1 MHz is from 200 to $800\;{\mu}{\Omega}/{\Omega}$. According to the measurement results, the frequency dependencies of the resistors are severaltimes lower than the measurement uncertainty of commercial LCR meters.

• ETRI Journal
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• 제28권1호
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• pp.115-118
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• 2006

In this letter, a simple model parameter extraction methodology for an on-chip spiral inductor is proposed based on a wide-band inductor model that incorporates parallel inductance and resistance to model skin and proximity effects, and capacitance to model the decrease in series resistance above the frequency near the peak quality factor. The wide-band inductor model does not require any frequency dependent elements, and model parameters can be extracted directly from the measured data with some curve fitting. The validity of the proposed model and parameter extraction methodology are verified with various size inductors fabricated using $0.18\;{\mu}m$ CMOS technology.

• Journal of Power Electronics
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• 제12권1호
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• pp.40-48
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• 2012

This paper proposes the State-of-charge (SOC) estimator of a LiPB Battery using the Extended Kalman Filter (EKF). EKF can work properly only with an accurate model. Therefore, the high accuracy electrical battery model for EKF state is discussed in this paper, which is focused on high-capacity LiPB batteries. The battery model is extracted from a single cell of LiPB 40Ah, 3.7V. The dynamic behavior of single cell battery is modeled using a bulk capacitance, two series RC networks, and a series resistance. The bulk capacitance voltage represents the Open Circuit Voltage (OCV) of battery and other components represent the transient response of battery voltage. The experimental results show the strong relationship between OCV and SOC without any dependency on the current rates. Therefore, EKF is proposed to work by estimating OCV, and then is converted it to SOC. EKF is tested with the experimental data. To increase the estimation accuracy, EKF is improved with a single dominant varying parameter of bulk capacitance which follows the SOC value. Full region of SOC test is done to verify the effectiveness of EKF algorithm. The test results show the error of estimation can be reduced up to max 5%SOC.

• 전기전자학회논문지
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• 제19권1호
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• pp.110-117
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• 2015

In this paper, a novel trench power MOSFET using a Separate-W-gated technique MOSFET (SWFET) is proposed. Because the SWFET has a very low $Q_{GD}$ compared to other forms of technology, it can be applied to high-speed power systems. The results found that the SWFET-applied $Q_{GD}$ was decreased by 40% when compared to simply using the more conventional trench gate MOSFET. $C_{ISS}$ (input capacitance : $C_{GS}+C_{GD}$), $C_{OSS}$ (output capacitance : $C_{GD}+C_{DS}$) and $C_{RSS}$ (reverse recovery capacitance : $C_{GD}$) were improved by 24%, 40%, and 50%, respectively. The switching characteristics of the inverter circuit shows a 24.9% enhancement of reverse recovery time, and the power efficiency of the DC-DC buck converter increased by 14.2%. In addition, the proposed SWFET does not require additional process steps and There was no degradation in the electrical performance of the current-voltage and on-resistance.

• 한국세라믹학회지
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• 제45권6호
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• pp.368-373
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• 2008

An electrode for supercapacitor using 3-dimensional porous nickel foam as a current collector and cobalt oxide as an active material was prepared and characterized in terms of morphology observation, crystalline property analysis, and the investigation of electrochemical property. The electrode surface showed that the cobalt oxide was homogeneously coated as the crystalline phase of $Co_3O_4$. Cyclic voltammetry for the $Co_3O_4$/nickel foam electrode exhibited higher specific capacitance values (445 F/g at 10 mV/s and 350 F/g at 200 mV/s) and excellent capacitance retention ratio (99% after $10^4$ cycles). It was proved that the nickel foam substrate played the roles in reducing the interfacial resistance with cobalt oxide and in improving the electrode density by embedding greater amount of cobalt oxide within it.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.797-801
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• 2014

This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below $10^{-12}$ A, a low capacitance of $0.07fF/mm^2$, and low triggering voltage of 8.5 V at $5.6{\times}10^{-5}$ A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices.

• 전기학회논문지P
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• 제61권4호
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• pp.186-191
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• 2012

DC Bus Electrolytic capacitors have been widely used in power conversion system because they can achieve high capacitance and voltage ratings with volumetric efficiency and low cost. This type of capacitors have been traditionally used for filtering, voltage smoothing, by-pass and other many applications in power conversion circuits requiring a cost effective and volumetric efficiency components. Unfortunately, electrolytic capacitors are some of the weakest components in power electronic converter. Many papers have proposed different methods or algorithms to determinate the ESR and/or capacitance C for fault diagnosis of the electrolytic capacitor. However, both ESR and C vary with frequency and temperature. Accurate knowledge of both values at the capacitors operating conditions is essential to achieve the best reference data of fault judgement. According to parameter analysis, the capacitance increases with temperature and the ESR decreases. Higher frequencies make the ESR and C to decrease. Analysis results show that the proposed electrolytic capacitor parameter estimation technique can be applied to reference signal of capacitor diagnosis systems successfully.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.187-187
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• 2010

In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.