• 한국식물생명공학회:학술대회논문집
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• 한국식물생명공학회 2005년도 추계학술대회 및 한일 식물생명공학 심포지엄
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• pp.40-64
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• 2005

Much biochemical information on peroxiredoxins (Prxs) has been reported but a genuine physiological function for these proteins has not been established. We show here that two cytosolic yeast Prxs, cPrxI and II, exist in a variety of forms that differ in their structure and molecular weight (MW) and that they can act both as a peroxidase and as a molecular chaperone. The peroxidase function predominates in the lower MW proteins, whereas the chaperone function is more significant in the higher MW complexes. Oxidative stress and heat shock exposure of yeasts causesthe protein structures of cPrxI and II to shift from low MW species to high MW complexes. This triggers a peroxidase-to-chaperone functional switch. These in vivo changes are primarily guided by the active peroxidase site residue, $Cys^{47}$, which serves as an efficient $'H_2O_2-sensor'$ in the cells. The chaperone function of the proteins enhances yeast resistance to heat shock.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

• Journal of Power Electronics
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• 제11권4호
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• pp.430-438
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• 2011

This article proposes a robust nonlinear control based on Lyapunov's redesign, whose purpose is to deal with parametric uncertainty in the resistance of the motor windings. The robust controller design is based on the passivity properties of the motor, as well as energy shaping and damping injection. The application of this control technique is focused on electric vehicles mainly formed by a battery bank, a power inverter, an AC brushless motor and the mechanical transmission. The sine PWM technique is used to trigger the switching devices of inverter. The results were obtained from simulation, where is shown that robust control makes a proper tracking of electromagnetic torque.

• 전력전자학회논문지
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• 제22권4호
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• pp.297-304
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• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권1호
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• pp.1-11
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• 1999

Hyrdogenated amorphous silicon thin film transistors are used as a pixel switching device of TFT-LCDs and very active research works on a-Si:H TFTs are in progress. Further development of the technology based on a-Si:H TFTs depends on the increased understanding of the device physics and the ability to accurately simulate the characteristics of them. A two-dimensional device simulator based on the realistic and flexible physical models can guide the device designs and their optimizations. A non-uniform finite-difference TFT Simulation Program, TFT2DS has been developed to solve the electronic transport equations for a-Si:H TFTs. In TFT2DS, many of the simplifying assumptions are removed. The developed simulator was used to calculate the transfer and output characteristics of a-Si:H TFTs. The measured data were compared with the simulated ones for verifying the validity of TFT2DS. Also the transient behaviors of a-Si:H TFTs were calculated even if the values of the related parameters are not accurately specified.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.595-596
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• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and low-temperature processes. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing which is high-resolution lithography technology using polydimethylsiloxane(PDMS) stamp. The OTFT array with dielectric layer and organic active semiconductor layers formed at room temperature or at a temperature tower than $40^{\circ}C$. The microcontact printing process using SAM(self-assembled monolayer) and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even nano size, and reduced the procedure by 10 steps compared with photolithography. Since the process was done in low temperature, there was no pattern transformation and bending problem appeared. It was possible to increase close packing of molecules by SAM, to improve electric field mobility, to decrease contact resistance, and to reduce threshold voltage by using a big dielecric.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.282-282
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• 2011

Low power consuming operation of phase-change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Ge2Sb2Te5 (GST) is one of the best materials for the phase change random access memory (PRAM) because the GST has two stable states, namely, high and low resistance values, which correspond to the amorphous and crystalline phases of GST, respectively. However, achieving the fast operation speed at lower current requires an alternative chalcogenide material to replace the GST and shrinking the dimension of programmable volume. In this paper, we have fabricated nanoscale contact area on Ge2Sb2Te5 thin films with trimming process. The GST material was fabricated by melt quenching method and the GST thin films were deposited with thickness of 100 nm by the electron beam evaporation system. As a result, the reset current can be safely scaled down by reducing the device contact area and we could confirmed the phase-change characteristics by applying voltage pulses.

• Journal of Magnetics
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• 제19권2호
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• pp.197-204
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• 2014

A transcranial magnetic stimulation device is a complicated appliance that employs a switching power device designed for discharging and charging a capacitor to more than 1 kV. For a simple transcranial magnetic stimulation device, this study used commercial power and controlled the firing angle using a Triac power device. AC 220V 60 Hz, the power device was used directly on the tanscranial magnetic stimulation device. The power supply device does not require a current limiting resistance in the rectifying device, energy storage capacitor or discharge circuit. To control the output power of the tanscranial magnetic stimulation device, the pulse repetition rate was regulated at 60 Hz. The change trigger of the Triac gate could be varied from $45^{\circ}$ to $135^{\circ}$. The AVR 182 (Zero Cross Detector) Chip and AVR one chip microprocessor could control the gate signal of the Triac precisely. The stimulation frequency of 50 Hz could be implemented when the initial charging voltage Vi was 1,000 V. The amplitude, pulse duration, frequency stimulation, train duration and power consumption was 0.1-2.2T, $250{\sim}300{\mu}s$, 0.1-60 Hz, 1-100 Sec and < 1 kW, respectively. Based on the results of this study, TMS can be an effective method of treating dysfunction and improving function of brain cells in brain damage caused by ischemia.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.190-193
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• 2006

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_{3}O_{12}$, thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si(100) substrates by a MOCVD process. Fabricated BGT thin films were found to be random oriental ions, which were confirmed by X-ray diffraction and scanning electron microscope analysis. The remanent polarization value ($2P_r$) of the BGT thin film annealed at $720^{\circ}C$ was $45.13{\mu}C/cm^2$, at an applied voltage of 5 V. The BGT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied voltage of 5 V. These results indicate that the randomly oriented BGT thin film is a promising candidate among ferroelectric materials useful in lead-free nonvolatile ferroelectric random access memory applications.

• 한국철도학회논문집
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• 제14권5호
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• pp.411-415
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• 2011

DC/DC컨버터는 임의의 직류전원을 부하가 요구하는 형태의 직류전원으로 변환시키는 전력변환기이다. 전압모드 DC/DC 컨버터는 주기적으로 입력측에서 출력측으로 전달되는 에너지를 제어하는 기능을 수행하기 위해 MOSFET(산화물-반도체 전계 효과 트랜지스터), 인덕터, PWM 제어기(오실레이터, 연산증폭기, 비교기로 구성)를 이용한다. 본 논문에서 PWM(펄스폭 변조) 모듈과 스위칭모드로 제어하는 기본적인 승압과 강압컨버터를 연구하고, 전기적 특성을 SPICE로 시뮬레이션을 수행하며, 전력의 효율을 각 소자의 변화와 사양에 따라 분석하는데 있다.