• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• 한국표면공학회지
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• 제44권6호
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• pp.233-238
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• 2011

The friction and wear characteristics of CrN and TiN coatings on SKD61 which is mold material using for extrusion of AZ80 magnesium alloy were investigated. The coatings were deposited by the arc ion-plating method, and the thickness were about $3.59{\mu}m$ and $3.28{\mu}m$, respectively. Reciprocating friction wear tests were conducted by varying pin load and temperature of counter substrate at un-lubricated condition. The pin loads were 11, 15 and 19 kgf, and the substrate temperatures were room temperature and $120^{\circ}C$. CrN coating which has a lower friction coefficient and a smaller adhesive wear with AZ80 magnesium alloy showed better wear resistance than TiN coating.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

• 센서학회지
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• 제9권1호
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• pp.76-82
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• 2000

본 연구에서는 내부전극 접합기술을 이용하여 적층구조의 PTC 서미스터를 제작하였다. 적층구조 PTC 서미스터는 저항, 소형, 대전류 등의 특징을 갖는다. PTC 특성을 조사하기 위하여 첨가제효과, 전압-전류특성, 온도특성, 복합임피던스 특성 등을 측정하였다. 적층구조 PTC서미스터는 저항의 온도특성과 전압-전류특성에서 높은 비선형성을 나타내었다. 적층수가 증가함에 따라 상온저항이 감소되는 특성이 결정립의 효과에 기인됨을 알았다. 전류의 스윗칭 변화는 적층구조가 갖는 열용량의 크기에 비례하였으며, 적층수가 증가할수록 스윗칭 시간이 증가하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회B
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• pp.2007-2010
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• 2008

Vanadium pentoxide ($V_2O_5$) powder was prepared and mixed with Molybdenum Oxides ($MoM_3$) to form Mo-doped and -undoped $VO_2$ films by a sol-gel method on graphite conductive substrates. X-Ray diffraction (XRD) and scanning electron microscopy (SEM) was used to investigate the chemical compositions and microstructures of the Mo-doped and -undoped $VO_2$ films. The variation of electrical resistance was measured as a function of temperature and stoichiometric composition between vanadium and molybdenum. In this study, it was found that Mo-doped and -undoped $VO_2$ shows the typical negative temperature coefficient (NTC) behavior. As the amount of the molybdenum increases, the electrical resistance of Modoped $VO_2$ film gets reduced under the transition temperature and a linear decrease in the transition temperature is observed. From these experimental results, we can conclude that the electrical resistance behavior with temperature change of $VO_2$ films can be utilized as a self-heating source with the electrical current flowing through the graphite substrate.

• Journal of Advanced Marine Engineering and Technology
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• 제19권2호
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• pp.1-9
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• 1995

The processing paper has devoted to the theory of the flow equations, the basic derivative procedure, the meaning of a valve flow coefficient $C_v$, the valve Reynolds R$R_{ev}$ and its application for liquid control valves, which applicable under the condition of a non-critical flow and the case of piping geometry factor $F_p$=1.0. However there is no information on the effects of fittings, a critical flow and the flow resistance coefficient of a valve equivalent to that of pipe which is conveniently used in the piping design. Since the piping systems of plants or ships generally contain various fittings such as expanders and reducers due to different size between pipes and valves and there may occur a critical flow, that a mass flowrate is maintained to be constant, due to the pressure drop in a piping when a liquid is initially maintainder ar a saturated temperature or at nearby corresponding to upstream pressure, system designer should have a knowledge of the effect to flow due to fittings and the critical flow phenomenon of a liquid. This study is performed to inform system designers with the critical flow phenomenon of a liquid, a valve resistance coefficient, a valve geometry factor and their applications.

• 한국주조공학회지
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• 제14권3호
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• pp.248-257
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• 1994

Research in heat transfer and solidification commonly involves experimentation and mathematical modeling with associated numerical analysis and computation. Inverse problems in heat transfer are part of this paradigm. During the solidification of metal casting, an interfacial heat transfer resistance exists at the boundary between the casting and the mold, and this heat transfer resistance usually varies with time. In the case of the squeeze casting the contact heat transfer resistance is decreased by pressure and ideal contact is almost accomplished. In the present work, heat transfer coefficient, which is inverse value of the heat transfer resistance, was used for convenience. A numerical technique, Non-Linear Estimation has been adopted for calculation of the casting/mold interfacial heat transfer coefficient during the squeeze casting process. In this method, the measured temperature data from experiment were used. The computational results were applied to the analysis of heat transfer and solidification.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권2호
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• pp.104-108
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• 1999

The electrical conductive mechanism and temperature dependence of electrical resistivity of $\alpha-SiC-ZrB_2$ composites with $ZrB_2$ contents were investigated. The electrical resistivity of hot-pressed composites was measured by the Pauw method form $25^{\circ} to 700^{\circ}C$. The electrical resistivity of the composites follow the electrical conduction model for a homogeneous mixture of two kind of particles with different conductivity. Also, the electrical resistivity versus temperature curves indicate the formation of local chains of $ZrB_2$ particles. In case of $\alpha-SiC-ZrB_2$ composites containing above 39vol.% $ZrB_2$ showed positive temperature coefficient resistance(PTCR), whereas the electrical resistivity of $\alpha-SiC-21vol.% ZrB_2$ showed negative temperature coefficient resistance(NTCR).

• 한국세라믹학회지
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• 제28권9호
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• pp.661-666
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• 1991

Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were studied by varying cooling rates and additives such as TiO2, SiO2 and Al2O3. The basic composition of the BaTiO3 ceramics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Unlike the additives of SiO2 and Al2O3, an addition of 2 mol% TiO2 to the basic composition was effective to control the grain size of the fired specimens. The room temperature resistivity and the temperature coefficient of resistance for the specimen of this particular compostion were measured as about 102 ohm.cm and 16.5%/$^{\circ}C$, respectively. The observed grain boundary phase of the sample with Al2O3 additive was BaTi3O7, while that of the samples with SiO2 additive was confirmed as BaTiSiO5.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16%)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vaccum furnace range $500\sim1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho=768.93$ ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.