• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.732-736
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• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

• Nuclear Engineering and Technology
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• v.30 no.3
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• pp.262-272
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• 1998

The experiences and causes of pressure tube cracking accidents in the CANDU reactors and the development of the fuel channel at AECL(Atomic Energy Canada Limited) have been described. Most of the accidents were caused by Delayed Hydride Cracking(DHC). In the cases of the Pickering units 3&4 and the Bruce unit 2, excessive residual stresses induced by an improper rolled joint process played a role in DHC. In the Pickering unit 2, cracks formed by contact between the pressure and calandria tubes due to the movement of the garter spring were the direct cause of the failure. To extend the life of a fuel channel, several R&D programs examining each component of the fuel channel have been carried out in Canada. For a pressure tube, the main concern is focused on changing the fabrication processes, e.g., increasing cold working rate, conducting intermediate annealing and adding a third element like Fe, V, and Cr to the tube material. In addition to them, chromium plating on the end fitting and increasing wall thickness at both ends of the calandria tube are considered. There has also been much interest in the improvement of fuel channel performance in our country and several development programs are currently under way.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Journal of the Earthquake Engineering Society of Korea
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• v.16 no.6
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• pp.1-12
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• 2012

The researches related to active control systems utilizing superelastic shape memory alloys (SMA) have been recently conducted to reduce critical damage due to lateral deformation after severe earthquakes. Although Superelastic SMAs undergo considerable inelastic deformation, they can return to original conditions without heat treatment only after stress removal. We can expect the mitigation of residual deformation owing to inherent recentering characteristics when these smart materials are installed at the part where large deformation is likely to occur. Therefore, the primary purpose of this research is to develop concentrically braced frames (CBFs) with superelastic SMA bracing systems and to evaluate the seismic performance of such frame structures. In order to investigate the inter-story drift response of CBF structures, 3- and 6-story buildings were design according to current design specifications, and then nonlinear time-history analyses were performed on numerical 2D frame models. Based on the numerical analysis results, it can be comparatively verified that the CBFs with superelastic SMA bracing systems have more structural advantages in terms of energy dissipation and recentering behavior than those with conventional steel bracing systems.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.81-86
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• 2001

We have investigated surface photovoltage characteristics of InGaAs grown by metalorganic chemical vapor deposition (MOCVD) method on semi-insulating GaAs. The splitted SPV signals from the substrate and epilayer were observed. The band gap energy of InGaAs was about 1.376 eV, The In composition(x) was determined by Pan's composition formula. The photovoltage gradually decreases with increasing frequency. This is because the transfer of charge from the surface states reduces. From the temperature dependent SPV measurement, we obtained Varshni and temperature coefficients. In spectrum of etched sample at 300 K, the 'A' peak below $E_o(GaAs)$ is related with residual impurity during sample growth.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.4
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• pp.28-34
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• 2012

Installing surge protection devices for a low-voltage system is important to ensure the survival of electric or electronic devices and systems. If surge protection devices (SPD) are installed without consideration of the concept of lightning protection zones, the equipment to be protected might be damaged despite the correct energy coordination of SPDs. This damage is induced by the reflection phenomena on the cable connecting an external SPD and the load protected. These reflection phenomena depend on the characteristics of the output of the external SPD, the input of the loads, and the cables between the load and the external SPD. Therefore, the SPD has an effective protection distance under the condition of the specific load and the specific voltage protection level of SPD. In this paper, PSCAD/EMTDC software is used to simulate the residual voltage characteristics of SPD Entering the low-voltage device. And by applying a certain voltage level, the effective protection distances of SPD were analyzed according to the each load and length of connecting cable, and the effectiveness of SPD were verified.

• Corrosion Science and Technology
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• v.7 no.6
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• pp.307-314
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• 2008

The influence of a moist atmosphere on $90^{\circ}$ domain switching under a sustained electric field, stress corrosion cracking of an indentation crack in water and an aggressive solution, and the relation between penetrating crack propagation and domain switching were studied using $BaTiO_3$ single crystal. The results indicate that enlarging the domain switching zone and crack propagation could be facilitated by a moist atmosphere or an aggressive solution due to the indentation residual stress. A moist atmosphere exerts remarkable influence upon the polarization of $BaTiO_3$ single crystal under a sustained electric field, and the surface energy of the c domain was much lower than that of the a domain. Domain switching ahead of a penetrating indentation crack tip was an essential requirement for crack propagation under constant stress.

• Structural Engineering and Mechanics
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• v.55 no.1
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• pp.229-244
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• 2015

H-infinity norm relates to the maximum in the frequency response function and H-infinity control method focuses on the case that the vibration is excited at the fundamental frequency, while 2-norm relates to the output energy of systems with the input of pulses or white noises and 2-norm control method weighs the overall vibration performance of systems. The trade-off between the performance in frequency-domain and that in time-domain may be achieved by integrating two indices in the mixed vibration control method. Based on the linear fractional state space representation in the modal space for a piezoelectric flexible structure with uncertain modal parameters and un-modeled residual high-frequency modes, a mixed dynamic output feedback control design method is proposed to suppress the structural vibration. Using the linear matrix inequality (LMI) technique, the initial populations are generated by the designing of robust control laws with different H-infinity performance indices before the robust 2-norm performance index of the closed-loop system is included in the fitness function of optimization. A flexible beam structure with a piezoelectric sensor and a piezoelectric actuator are used as the subject for numerical studies. Compared with the velocity feedback control method, the numerical simulation results show the effectiveness of the proposed method.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.99-100
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• 1993

Calorimetric (D.S.C) studies were carried out on the nylon 4,6 single crystals grown from 1,4-butanediol solution at various crystallisation temperatures, based on the assessment of the lamellar thickness by small angle x-ray scattering. Samples were annealed mainly ot get rid of residual solvents inside the crystals. The effect of annealing on the crystal perfection is inferred from the measured thermal properties of the crystals. Accordig to the scanning rates less than 80 K/min., D. S C. melting peaks indicate that changes in the internal morphology of nylon 4,6 crystals preapred at different crystallisation temeratures yield a thermodynamic melting temperature. Tm, of 319 $^{\circ}C$, for the infinitely extended crystal thickness (1/ι). The obtained heat of fusion value for the inginite crystal thickness, Ho, was 270 J/g from the plot of measured feat of fusion ($\Delta$Hm) vs. reciprocal crystal thickness (1/ι). based on these values, the fold surface energy, $\delta$e. of 65.4 erg/$\textrm{cm}^2$ was obtained from Hoffman-Waeeks equation. The thermodynamic melting temperature and heat of fusion of the infinite crystal thickness for the solution grow nylon 4,6 single crystals are found to be higher than of the reported corresponding solution grown nylon 6,6 single crystals. pbtained crystallinity from D. S. C measurements ranges from 40 to 50 %, which is close to the reported yalue for the nylon 6,6 single ctystals but lower than we expected.

• Journal of Electrical Engineering and Technology
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• v.13 no.5
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• pp.1798-1806
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• 2018

When a contingency occurs in a large transmission route in a power system, it can generate various instabilities that may lead to a power system blackout. In particular, transient instability in a power system needs to be immediately addressed, and preventive measures should be in place prior to fault occurrence. Measures to achieve transient stability include system reinforcement, power generation restriction, and generator tripping. Because the interpretation of transient stability is a time domain simulation, it is difficult to determine the efficacy of proposed countermeasures using only simple simulation results. Therefore, several methods to quantify transient stability have been introduced. Among them, the single machine equivalent (SIME) method based on the equal area criterion (EAC) can quantify the degree of instability by calculating the residual acceleration energy of a generator. However, method for generator tripping effect evaluation does not have been established. In this study, we propose a method to evaluate the effect of generator tripping on transient stability that is based on the SIME method. For this purpose, the measures that reflect generator tripping in the SIME calculation are reviewed. Simulation results obtained by applying the proposed method to the IEEE 39-bus system and KEPCO system are then presented.