• Journal of Korea Foundry Society
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• v.11 no.4
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• pp.303-313
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• 1991

The Purification mechanism of high purity aluminum was studied through the variation of stirring speed and coolant flow rate in the stirring method. In the stirring method the degree of purification was changed as the following factors;the variation of diffusion boundary layer thickness the variation of growth rate and the solute concentration of the residual melt. The concentration of Fe and Si was decreased as the stirring speed and the radial distance increased. In a high stirring speed of 2000rpm with unidirectional stirring mode, the uniformity of solutes was obtained. On the other hand, the purification of Si was done by the combinations of stirring method, fractional melting and acid leaching. In the case of Si purification, the centrifugal force developed in the melt acted as the significant purification factor. It was possible to obtain the purified 3N grade Si crystal after the complete elimination of residual aluminum by fractional melting and acid leaching.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.6
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• pp.573-580
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• 2004

The main goal of this study was to develop a micro-fabrication process for the capacitive micromachined ultrasonic transducer (cMUT). In order to achieve this goal, the former research results of the micro-electro-mechanical system (MEMS) process for the cMUT were analyzed. The membrane deposition, sacrificial layer deposition and etching were found to be a main process of fabricating the cMUT. The optimal conditions for those microfabrication were determined by the experiment. The thickness, uniformity, and residual stress of the $Si_3N_3$ deposition which forms the membrane of the cMUT were characterized after growing the $Si_3N_3$ on Si-wafer under various process conditions. As a sacrificial layer, the growth rate of the $SiO_2$ deposition was analyzed under several process conditions. The optimal etching conditions of the sacrificial layer were analyzed. The microfabrication process developed in this study will be used to fabricate the cMUT.

• Applied Chemistry for Engineering
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• v.33 no.5
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• pp.459-465
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• 2022

A pitch coating method was proposed for the purpose of improving the electrochemical properties of natural graphite. The synthesis conditions of pitch coating were optimized via measuring electrochemical properties of pitch-coated graphite anodes. As the synthesis temperature increased, the thermal stability was improved in addition to an increase in the softening point and residual carbon weight. However, the synthesis temperature of 430 ℃ resulted in the synthesis of a large amount of NI (NMP Insoluble) due to excessive condensation reaction. As the surface uniformity and coating thickness increased due to high thermal stability, the initial coulombic efficiency and rate capability of the pitch-coated graphite were improved. However, the graphite coated with the pitch containing excessive NI showed lower electrochemical properties than the uncoated graphite. NI had low dispersibility and formed spheres after heat treatment, so it formed the heterogeneous and thicker SEI layer. The optimum conditions for forming a uniform surface and an appropriate coating layer were investigated.