• 제목/요약/키워드: Research laboratory

검색결과 16,434건 처리시간 0.059초

Effects of ZnS Insertion on the Characteristics of CaS:Pb Thin Film Phosphor

  • Park, Sang-Hee Ko;Kang, Seung-Youl;Kim, Kwang-Bok;Kim, Dong-Il;Yun, Sun-Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.1071-1074
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    • 2003
  • The effects of ZnS insertion on the characteristics of CaS:Pb phosphor were investigated. The intensity of photoluminescence of ZnS inserted CaS:Pb excited by 347nm were increased while that excited by 254nm was unchanged, compared to those of CaS:Pb thin film. The electroluminescent display having ZnS inserted CaS:Pb showed lower threshold voltage and higher efficiency than those of CaS:Pb ELD device.

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Identification of Recombinant Subtilisins

  • CHOI , NACK-SHICK;YOO, KI-HYUN;YOON, KAB-SEOG;CHANG, KYU-TAE;MAENG, PIL-JAE;KIM, SEUNG-HO
    • Journal of Microbiology and Biotechnology
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    • 제15권1호
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    • pp.35-39
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    • 2005
  • To identify the activity of recombinant subtilisins (subtilisin BPN' and subtilisin Carlsberg), three different zymography methods, SDS-fibrin zymography (SDS-FZ), reverse fibrin zymography (RFZ), and isoelectric focusingfibrin zymography (IEF-FZ), were used. The recombinant subtilisins BPN' and Carlsberg did not migrate into the electrophoretic field based on a Laemmli buffer system, instead forming a "binding mode" at the top part of the separating gels with the SDS-FZ and RFZ techniques. Yet, this problem was resolved when using IEF-FZ with a pH range from 3 to 10. In addition, all these methods enabled the activity of a recombinant pro-subtilisin DJ-4 to be detected without a refolding pathway.

Sense Amplifier Design for A NOR Type Non-Volatile Memory

  • Yang, Yil-Suk;Yu, Byoung-Gon;Roh, Tae-Moon;Koo, Jin-Gun;Kim, Jongdae
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -3
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    • pp.1555-1557
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    • 2002
  • We have investigated the precharge type sense amplifier, it is suitable fur voltage sensing in a NOR type single transistor ferroelectric field effect transistor (1T FeFET) memory read operation. The proposed precharge type sense amplifier senses the bit line voltage of 1T FeFET memory. Therefore, the reference celt is not necessary compared to current sensing in 1T FeFET memory, The high noise margin is wider than the low noise margin in the first inverter because requires tile output of precharge type sense amplifier high sensitivity to transition of input signal. The precharge type sense amplifier has very simple structure and can sense the bit line signal of the 1T FeFET memory cell at low voltage.

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High performance inkjet printed polymer CMOS integrated circuits

  • Baeg, Kang-Jun;Kim, Dong-Yu;Koo, Jae-Bon;Jung, Soon-Won;You, In-Kyu;Noh, Yong-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.67-70
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    • 2009
  • Printed electronics are emerging technology to realize various microelectronic devices via a cost-effective method. Here we introduce high performance inkjet printed polymer field-effect transistors and application to complementary integrated circuits with p-type and n-type conjugated polymers. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. The device optimization and performances of various integrated circuits, e.g., complementary inverters and ring oscillators will be mainly discussed in this talk.

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A dense local block CNT-FEL BLU with common gate structure

  • Jeong, Jin-Woo;Kim, Dong-Il;Kang, Jun-Tae;Kim, Jae-Woo;Song, Yoon-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.148-150
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    • 2009
  • We have developed 15 inch, 130 blocks local dimming FEL using printed CNT emitters, in which multiple FE blocks were built with a common gate electrode. Cathode electrode formed by the double-metal technique, in which an insulator is interposed between the addressing bus and cathode electrode.

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Millimeter-wave directional-antenna beamwidth effects on the ITU-R building entry loss (BEL) propagation model

  • Lee, Juyul;Kim, Kyung-Won;Kim, Myung-Don;Park, Jae-Joon;Yoon, Young Keun;Chong, Young Jun
    • ETRI Journal
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    • 제42권1호
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    • pp.7-16
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    • 2020
  • Assuming omnidirectional antenna reception, the ITU-R recently developed a new propagation model on building entry loss (BEL) for 5G millimeter-wave frequency sharing and compatibility studies, which is a simplified outdoor-to-indoor path loss model. Considering the utilization of high-gain narrow-beamwidth beamforming, the omnidirectional-based ITU-R BEL model may not be appropriate to predict propagation characteristics for directional beamforming scenarios. This paper studies the effects of beamwidth on the ITU-R BEL model. This study is based on field measurements collected with four different beamwidth antennas: omnidirectional, 10° horn, 30° horn, and 60° horn. The measurement campaigns were conducted at two types of building sites: traditional and thermally efficient buildings. These sites, as well as the measurement scenarios, were carefully chosen to comply with the ITU-R BEL measurement guidelines and the ITU-R building types. We observed the importance of accurate beam alignment from the BEL variation range. We were able to quantify the beamwidth dependency by fitting to a model that is inversely proportional to the beamwidth.