• Proceedings of the Korean Society of Embryo Transfer Conference
• /
• 2003.10a
• /
• pp.106-106
• /
• 2003

• Proceedings of the Korean Society of Plant Biotechnology Conference
• /
• 2005.11a
• /
• pp.433-433
• /
• 2005

• Proceedings of the Korean Society of Embryo Transfer Conference
• /
• 2006.10a
• /
• pp.54-55
• /
• 2006

• Proceedings of the Korean Society of Embryo Transfer Conference
• /
• 2006.10a
• /
• pp.84-85
• /
• 2006

• Proceedings of the PSK Conference
• /
• 2000.10a
• /
• pp.157.2-158
• /
• 2000

• 한국당과학회:학술대회논문집
• /
• 2006.11a
• /
• pp.40-40
• /
• 2006

• Bulletin of the Korean Chemical Society
• /
• v.30 no.7
• /
• pp.1655-1657
• /
• 2009

• 대한생식의학회:학술대회논문집
• /
• 2002.05a
• /
• pp.87.2-88
• /
• 2002

• Proceedings of the PSK Conference
• /
• 2000.10a
• /
• pp.267.2-268
• /
• 2000

• Proceedings of the Korean Magnestics Society Conference
• /
• 2000.09a
• /
• pp.5-32
• /
• 2000

MRAM, High performance MRAM using MTJS demostrated, fully integrated MTJ MRAM with CMOS circuits, write time ~2.3 nsec; read time ~3 nsec, Thermally stable up to ~350 C, Switching field distibution controlled by size & shape. Magnetic Tunnel Junction Properties, Magnetoresistance: ~50% at room temperature, enhanced by thermal treatment, Negative and Positive MR by interface modification, Spin Polarization: >55% at 0.25K, Insensitive ot FM composition, Resistance $\times$ Area product, ranging from ~20 to 10$^{9}$ $\Omega$(${\mu}{\textrm}{m}$)$^{2}$, Spin valve transistor, Tunnel injected spin polarization for "hot" electrons, Decrease of MTJMR at high bias originates from anode.