• Title/Summary/Keyword: Relaxed strain

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Application of Laser Interferometry for Assessment of Surface Residual Stress by Determination of Stress-free State (무잔류 응력상태 결정을 통한 표면 잔류응력장 평가에의 레이저 간섭계 적용)

  • 김동원;이낙규;나경환;권동일
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.2
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    • pp.35-40
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    • 2004
  • The total relaxed stress in annealing and the thermal strain/stress were obtained from the identification of the residual stress-free state using electronic speckle pattern interferometry (ESPI). The residual stress fields in case of both single and film / substrate systems were modeled using the thermo-elastic theory and the relationship between relaxed stresses and displacements. We mapped the surface residual stress fields on the indented bulk Cu and the 0.5 $\mu\textrm{m}$ Au film by ESPI. In indented Cu, the normal and shear residual stress are distributed over -1.7 GPa to 700 MPa and -800 GPa to 600 MPa respectively around the indented point and in deposited Au film on Si wafer, the tensile residual stress is uniformly distributed on the Au film from 500 MPa to 800 MPa. Also we measured the residual stress by the x-ray diffractometer (XRD) for the verification of above residual stress results by ESPI...

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The Rate Dependent Deformation Behavior of AISI Type 304 Stainless Steel at Room Temperature (304 스테인리스강의 점소성 특성에 관한 연구)

  • Ho, Kwang-Soo
    • Transactions of Materials Processing
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    • v.16 no.2 s.92
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    • pp.101-106
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    • 2007
  • Uniaxial displacement controlled tests were performed on annealed Type 304 stainless steel at room temperature. A servo-controlled testing machine and strain measurement on the gage length were employed to measure the response to a given input. The test results exhibit that the flow stress increases nonlinearly with the strain rate and the relaxed stress at the end of the relaxation periods depends strongly on the strain rate preceding the relaxation test. The rate-dependent inelastic deformation behavior is simulated using a new unified viscoplasticity model that has the rate-dependent format of nonlinear kinematic hardening rule, which plays a key role in modeling the rate dependence of relaxation behavior. The model does not employ yield or loading/unloading criteria and consists of a flow law and the evolution laws of two tensor and one scalar-valued state variables.

Tensile Mean Strain Effects on the Fatigue Life of SiC-Particulate-Reinforced Al-Si Cast Alloy Composites (SiC입자강화 주조Al-Si복합재의 피로수명에 대한 인장평균변형률의 영향)

  • Go, Seung-Gi
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.23 no.11 s.170
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    • pp.1970-1981
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    • 1999
  • The low-cycle fatigue behaviour of a SiC-particulate-reinforced Al-Si cast alloy with two different volume fractions has been investigated from a series of strain-control led fatigue tests with zero and nonzero tensile mean strains. The composites including the unreinforced matrix alloy, exhibited cyclic hardening behaviour, with more pronounced strain-hardening for the composites with a higher volume fraction of the SiC particles. For the tensile mean strain tests, the initial high tensile mean stress relaxed to zero for the ductile Al-Si alloy, resulting in no influence of the tensile mean strain on the fatigue life of the matrix alloy. However, tensile mean strain for the composite caused tensile mean stresses and reduced fatigue life. The pronounced effects of mean strain on the low-cycle fatigue life of the composite compared to the unreinforced matrix alloy were attributed to the initial large prestrain and non-relaxing high tensile mean stress in the composite with very limited ductility and Cyclic plasticity. Fatigue damage parameter using strain energy, density efficiently accounted for the mean stress effects. Predicted fatigue life using the damage parameter correlated fairly well with the experimental life within a factor of 3. Also, the fatigue damage parameter indicated the inferior life in the low-cycle regime and superior life in the high-cycle regime for the composite, compared to the unreinforced matrix alloy.

Evaluation for mechanical hardness of gas turbine rotor bolt according to deterioration of specimen (시편의 열화에 따른 가스터빈 로터볼트 기계적 강도평가)

  • Gil, D.S.;Ahn, Y.S.;Park, S.K.
    • Journal of Power System Engineering
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    • v.15 no.4
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    • pp.19-24
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    • 2011
  • The operational efficiency of domestic gas turbine is about 25% and it is now in the trend of the gradual growth in spite of the severe temperature, frequent starting and shutdown according to the environmental management and the energy-efficient use. Rotor bolts of gas turbine in power plants have been the cause of defects because these gas turbines have been operated for a long time under the high pressure and temperature environment experiencing the aging change and stress concentration of the bonded part. The connection parts of the bolt revealed various failure shape and these parts were elongated under very low pressure when operated in the relaxed condition. The cause is in the lack of the metal distribution in the bottle lack area and the cap screw of the bolt is broken totally in case that the nut is fastened in most cases. Gas turbine rotor bolts are connected to the rotor wheel and these bolts caused the vibration, the bulk accident of the rotor in the event that the coupling power among these bolts was relaxed. Therefore, we would like to evaluate the soundness of the main part of the gas turbine rotor bolt through the measurement of the inner condition change along with the mechanic deterioration and temperature, stress in the gas turbine rotor material.

Hole Mobility Characteristics of Biaxially Strained SiGe/Si Channel Structure with High Ge Content (고농도의 Ge 함량을 가진 Biaxially Strained SiGe/Si Channel Structure의 정공 이동도 특성)

  • Jung, Jong-Wan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.44-48
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    • 2008
  • Hole mobility characteristics of two representative biaxially strained SiGe/Si structures with high Ge contents are studied, They are single channel ($Si/Si_{1-x}Ge_x/Si$ substrate) and dual channel ($Si/Si_{1-y}Ge_y/Si_{1-x}Ge_x/Si$ substrate), where the former consists of a relaxed SiGe buffer layer with 60 % Ge content and a tensile-strained Si layer on top, and for the latter, a compressively strained SiGe layer is inserted between two layers, Owing to the hole mobility performance between a relaxed SiGe film and a compressive-strained SiGe film in the single channel and the dual channel, the hole mobility behaviors of two structures with respect to the Si cap layer thickness shows the opposite trend, Hole mobility increases with thicker Si cap layer for single channel structure, whereas it decreases with thicker Si cap layer for dual channel. This hole mobility characteristics could be easily explained by a simple capacitance model.

Application of Laser Interferometry for Assessment of Surface Residual Stress by Determination of Stress-free State (무잔류 응력상태 결정을 통한 표면 잔류응력장 평가에의 레이저 간섭계 적용)

  • Kim, Dong-Won;Lee, Nak-Kyu;Choi, Tae-Hoon;Na, Kyong-Hoan;Kwon, Dong-Il
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.25-30
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    • 2003
  • The total relaxed stress in annealing and the thermal strain/stress were obtained from the identification of the residual stress-free state using electronic speckle pattern interferometry (ESPI). The residual stress fields in case of both single and film/substrate systems were modeled using the thermo-elastic theory and the relationship between relaxed stresses and displacements. We mapped the surface residual stress fields on the indented bulk Cu and the 0.5 ${\mu}m$ Au film by ESPI. In indented Cu, the normal and shear residual stress are distributed over -1.7 GPa to 700 MPa and -800 GPa to 600 MPa respectively around the indented point and in deposited Au film on Si wafer, the tensile residual stress is uniformly distributed on the Au film from 500 MPa to 800 MPa. Also we measured the residual stress by the x-ray diffractometer (XRD) for the verification of above residual stress results by ESPI.

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Strain relaxed Co nanocrystals formation from thin films on sapphire substrate induced by nano-second laser irradiation

  • Seo, Ok-Gyun;Gang, Deok-Ho;Son, Jun-Gon;Choe, Jeong-Won;Ha, Seong-Su;Kim, Seon-Min;Gang, Hyeon-Cheol;No, Do-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.145.2-145.2
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    • 2016
  • We report the phase transformation of Co thin films on a sapphire substrate induced by laser irradiation. As grown Co films were initially strained and tetragonally distorted. With low power laser irradiation, the surface was ruptured and irregular holes were formed. As the laser power was increased, the films changed into round shape Co nanocrystals with well-defined 6-fold structure. By measuring the XRD of Co nanostructure as a function of laser energy densities, we found that the change of morphological shapes from films to nanocrystals was accompanied with decrease of the tetragonal distortion as well as strain relaxation. By measuring the size distribution of nanocrystals as a function of film thickness, the average diameter is proportional to 1.7 power of the film thickness which was consistent with the prediction of thin film hydrodynamic (TFT) dwetting theory. Finally, we fabricated the formation of size controlling nanocrystals on the sapphire substrate without strain.

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Measurement of Through Thickness Welding Residual Stresses based on Theory of Inherent Strain (고유변형도이론을 이용한 두께방향의 용접잔류응력의 측정)

  • Park, Jeong-Ung;Ryu, Kang-Mook;An, Gyu-Baek;Lee, Jong-Sub;Jang, Seok-In
    • Proceedings of the KWS Conference
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    • 2009.11a
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    • pp.98-98
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    • 2009
  • 용접에 의해 발생하는 용접잔류응력은 강구조물의 피로성능, 파괴양상 등에 영향을 주고 있으나 이러한 용접잔류응력을 예측하는 것은 쉽지 않다. 이러한 용접잔류응력을 예측하는 방법으로는 열탄소성해석과 같은 수치적 방법과 실험적 방법이 있다. 열탄소성해석의 경우 실제문제를 이상화하는 과정에서 매우 복잡한 모델링 기술이 필요하다. 또한, 측정방법에서는 표면의 잔류응력을 측정할 수 있는 홀드링법과 X-선법 등이 있고, 내부 잔류응력의 측정방법으로는 중성자회절법이 있다. 그러나 홀드링법의 경우, 사용범위의 한계와, 중성자회절법에서의 내부 잔류응력을 측정할 수 있는 두께의 제약이 있어 후판의 잔류응력을 측정하는 것은 한계가 있다. 따라서 본 연구에서는 용접잔류응력의 생성근원인 고유변형도를 측정하고 이것으로부터 맞대기용접에서 발생하는 두께방향의 용접잔류응력을 계측하였다.

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Luminescence Properties of Blue Light-emitting Diode Grown on Patterned Sapphire Substrate

  • Wang, Dang-Hui;Xu, Tian-Han;Wang, Lei
    • Current Optics and Photonics
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    • v.1 no.4
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    • pp.358-363
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    • 2017
  • In this study, we present a detailed investigation of luminescence properties of a blue light-emitting diode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grown on patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystal quality, the threading dislocation density, surface morphology, residual strain existing in the active region and optical properties. We conclude that the crystalline quality and surface morphology can be greatly improved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtained because the residual strain that existed in the active region can be relaxed when the LED is grown on patterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superior luminescence properties of blue light LED from the viewpoint of residual strain in the active region.

An ab Initio Study of Interfacial Energies between Group IV Transition Metal Carbides and bcc Iron (IV 천이금속 탄화물과 bcc Fe간 계면 에너지의 제일원리 연구)

  • Chung Soon-Hyo;Jung Woo-Sang;Byun Ji-Young
    • Korean Journal of Materials Research
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    • v.15 no.9
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    • pp.566-576
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    • 2005
  • This paper describes an ab Initio study on interface energies, misfit strain energies, and electron structures at coherent interfaces Fe(bcc structure)/MCs(NaCl structure M=Ti, Zr, Hf). The interface energies at relaxed interfaces Fe/TiC, Fe/ZrC and Fe/HfC were 0.263, 0.153 and $0.271 J/m^2$, respectively. It was understood that the dependence of interface energy on the type of carbide was closely related to changes of the binding energies between Fe, M and C atoms before and after formation of the interfaces Fe/MCs with the help of the DLP/NNBB (Discrete Lattice Plane/ Nearest Neighbour Broken Bond) model and data of the electron structures. The misfit strain energies in Fe/TiC, Fe/ZrC and Fe/HfC systems were 0.390, 1.692 and 1.408 eV per 16 atoms(Fe: 8 atoms and MC; 8 atoms). More misfit energy was generated as difference of lattice parameters between the bulk Fe and the bulk MCs increased.