• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.157-157
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• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

• 한국진공학회지
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• 제20권2호
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• pp.127-134
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• 2011

본 연구에서는 고분해능 X선 회절법을 이용해 Ni/Ag 반사막 p형 오믹 전극의 Ag 집괴에 따른 전극의 구조 분석을 수행하였다. 대기 분위기에서 오믹 전극을 고온 열처리할 경우, 열처리 시간이 증가할수록 Ag의 집괴가 진행되어 24시간 열처리 후, 전류-전압 곡선은 쇼트키 특성을 나타내었고, 또한 460 nm 파장에서 21%의 낮은 반사도를 나타내었다. X선 회절 결과로부터 Ag의 집괴가 진행될수록, Ag 박막의 내부 변형율을 감소되는 방향으로 Ag 원자의 확산이 진행되어, Ag (111) 결정면의 면간 거리가 bulk Ag와 거의 동일하게 나타났다. 이러한 반사막 오믹 전극의 구조 분석은 고출력 고효율 수직형 LED에 적합한 열적 안정성이 우수한 오믹 전극의 개발에 매우 중요함을 알 수 있다.